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2篇 您的检索式:作者名="Satoshi Numazawa"
    题名 作者 年代 出处 被引量
1Severe aconite poisoning successfully treated with veno-arterial extracorporeal membrane oxygenation:A case report显示文摘BACKGROUND Most species of aconite contain highly toxic aconitines,the oral ingestion of which can be fatal,primarily because they cause ventricular arrhythmias.We describe a case of severe aconite poisoning that was successfully treated through venoarterial extracorporeal membrane oxygenation(VA-ECMO)and in which detailed toxicological analyses of the aconite roots and biological samples were performed using liquid chromatography-tandem mass spectrometry(LC-MS/MS).CASE SUMMARY A 23-year-old male presented to the emergency room with circulatory collapse and ventricular arrhythmia after ingesting approximately half of a root labeled,“Aconitum japonicum Thunb”.Two hours after arrival,VA-ECMO was initiated as circulatory collapse became refractory to antiarrhythmics and vasopressors.Nine hours after arrival,an electrocardiogram revealed a return to sinus rhythm.The patient was weaned off VA-ECMO and the ventilator on hospital days 3 and 5,respectively.On hospital day 15,he was transferred to a psychiatric hospital.The other half of the root and his biological samples were toxicologically analyzed using LC-MS/MS,revealing 244.3 mg/kg of aconitine and 24.7 mg/kg of mesaconitine in the root.Serum on admission contained 1.50 ng/mL of aconitine.Beyond hospital day 2,neither were detected.Urine on admission showed 149.09 ng/mL of aconitine and 3.59 ng/mL of mesaconitine,but these rapidly decreased after hospital day 3.CONCLUSION The key to saving the life of a patient with severe aconite poisoning is to introduce VA-ECMO as soon as possible.Saeko Kohara Yoshito Kamijo Ryoko Kyan Ichiro Okada Eiju Hasegawa Soichiro Yamada Koichi Imai Asuka Kaizaki-Mitsumoto Satoshi Numazawa 2024World Journal of Clinical Cases2024,12,2:0
2Development of the reactive force field and silicon dry/wet oxidation process modeling显示文摘We developed the Si/O/H reactive force field parameter set and applied to silicon dry/wet oxidation process to understand the underlying physics of the thermal oxidation of the Si(100)surface.Through a systematic development of the Si/O parameter using the experimental data of the volumes of the SiO_(2) crystal as a reference,we reproduced the same result over the temperature range of 300–1300 K.With strategic tunings of parameters related to Si/O/H system,we carried out the simulation comparing the wet-and dry processes.A significant acceleration of the oxide film growth seen in the‘in-situ-steam-generation(ISSG)’is successfully represented.These properties of our model imply its applicability in wider scope.We compare our results with those obtained by using parameter set recently developed by other authors.Investigating the configuration of atoms near the interface of the SiO_(2) film,our model is found to be able to study the role of hydrogen atoms for the ISSG acceleration.unichi Noaki Satoshi Numazawa Joohyun Jeon Shuntaro Kochi 2023npj Computational Materials2023,,1:0
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