维普中文期刊产品整合服务
1篇 您的检索式:作者名="Seong HKIM"
    题名 作者 年代 出处 被引量
1Running-in process of Si-SiO_(x)/SiO_(2)pair at nanoscale-Sharp drops in friction and wear rate during initial cycles显示文摘Using an atomic force microscope,the running-in process of a single crystalline silicon wafer coated with native oxide layer(Si-SiO_(x))against a SiO_(2)microsphere was investigated under various normal loads and displacement amplitudes in ambient air.As the number of sliding cycles increased,both the friction force Ft of the Si-SiO_(x)/SiO_(2)pair and the wear rate of the silicon surface showed sharp drops during the initial 50 cycles and then leveled off in the remaining cycles.The sharp drop in Ft appeared to be induced mainly by the reduction of adhesion-related interfacial force between the Si-SiO_(x)/SiO_(2)pair.During the running-in process,the contact area of the Si-SiO_(x)/SiO_(2)pair might become hydrophobic due to removal of the hydrophilic oxide layer on the silicon surface and the surface change of the SiO_(2)tip,which caused the reduction of friction force and the wear rate of the Si-SiO_(x)/SiO_(2)pair.A phenomenological model is proposed to explain the running-in process of the Si-SiO_(x)/SiO_(2)pair in ambient air.The results may help us understand the mechanism of the running-in process of the Si-SiO_(x)/SiO_(2)pair at nanoscale and reduce wear failure in dynamic microelectromechanical systems(MEMS).Lei CHEN Seong HKIM Xiaodong WANG Linmao QIAN 2013Friction2013,1,1:5
返回顶部 每页显示:
共1页 首页 上一页 第1页 下一页 末页 /1 跳转

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费