|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Time-dependent density-functional theory molecular-dynamics study on amorphization of Sc-Sb-Te alloy under optical excitation显示文摘Recently,all-optical memory and optical-computation properties of phase-change materials are receiving intensive attention.Because writing/erasing information in these devices is usually achieved by laser pulses,the interaction between the laser and the phase-change materials becomes a key issue for such new applications.In this work,by a time-dependent density-functional theory molecular-dynamics study,the physics underlying the optical excitation induced amorphization of Sc-Sb-Te is revealed,which goes back to superatom-like Sc-centered structural motifs.These motifs are found to be still robust under the excitation. | Xue-Peng Wang Xian-Bin Li Nian-Ke Chen Junhyeok Bang Ryky Nelson Christina Ertural Richard Dronskowski Hong-Bo Sun Shengbai Zhang | 2020 | npj Computational Materials2020，，1： | 5 |
| 2 | Direct observation of Pt nanocrystal coalescence induced by electron-excitation-enhanced van der Waals interactions显示文摘 | Ying Jiang Yong Wang Yu Yang Zhang Zhengfei Zhang Wentao Yuan Chenghua Sun Xiao Wei Casey N. Brodsky Chia-Kuang Tsung Jixue Li Xiaofeng Zhang Scott X. Mao Shengbai Zhang Ze Zhang | 2014 | Nano Research2014，7，3： | 4 |
| 3 | Two-dimensional In_(2)Se_(3):A rising advanced material for ferroelectric data storage显示文摘Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high endurance.However,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale.As a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)miniaturization.Recently,a two-dimensional(2D)In2Se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of miniaturization.Soon,devices based on 2D In2Se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were demon-strated.However,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In2Se3 is still lacking.Here,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2D In2Se3 are reviewed.Furthermore,the correlations among the structures,the properties,and the device performance are analyzed.Finally,several crucial problems or challenges and possible research directions are put forward.We hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2D In2Se3 based ferroelectric memory and computing technol-ogy for practical industrial applications. | Yu-Ting Huang Nian-Ke Chen Zhen-Ze Li Xue-Peng Wang Hong-Bo Sun Shengbai Zhang Xian-Bin Li | 2022 | InfoMat2022，4，8： | 2 |
| 4 | Excitation to defect-bound band edge states in twodimensional semiconductors and its effect on carrier transport显示文摘The ionization of dopants is a crucial process for electronics,yet it can be unexpectedly difficult in two-dimensional materials due to reduced screening and dimensionality.Using first-principles calculations,here we propose a dopant ionization process for twodimensional semiconductors where charge carriers are only excited to a set of defect-bound band edge states,rather than to the true band edge states,as is the case in three-dimensions.These defect-bound states have small enough ionization energies but large enough spatial delocalization.With a modest defect density,carriers can transport through band by such states. | Dan Wang Dong Han Damien West Nian-Ke Chen Sheng-Yi Xie Wei Quan Tian Vincent Meunier Shengbai Zhang Xian-Bin Li | 2019 | npj Computational Materials2019，，1： | 1 |
| 5 | Enhanced valley splitting of WSe_(2)in twisted van der Waals WSe_(2)/CrI_(3)heterostructures显示文摘Van der Waals(vdW)heterostructures composed of different two-dimensional(2D)materials offer an easily accessible way to combine properties of individual materials for applications.Owing to the discovery of a set of unanticipated physical phenomena,the twisted 2D vdW heterostructures have gained considerable attention recently.Here,we report enhanced valley splitting in twisted 2D vdW WSe_(2)/CrI_(3)heterostructures.In particular,the splitting can be 1200%(or 5.18 meV)of the value for a non-twisted heterostructure.According to the k·p model,this value is equivalent to a~20 T external magnetic field applied perpendicular to the 2D sheet.The thermodynamic stability of 2D vdW WSe_(2)/CrI_(3)heterostructures,on the other hand,depends linearly on the interlayer twisting angle. | Mei Ge Han Wang Jizheng Wu Chen Si Junfeng Zhang Shengbai Zhang | 2022 | npj Computational Materials2022，，1： | 1 |
| 6 | MoS2nanoribbons : high stability and unusual electronic andmagnetic properties 显示文摘 | Li Yafei Zhou Zhen Zhang Shengbai | 2008 | Journal of the AmericanChemical Society2008，130，16： | 1 |
| 7 | Tuning the structures of two-dimensional cuprous oxid econfined on Au(111)显示文摘Two-dimensional (2D) cuprous oxide (Cu20) nanostructures (NSs) of monolayerthickness were synthesized on Au(111) and characterized using atomic-resolutionscanning tunneling microscopy, X-ray photoelectron spectroscopy, and densityfunctional theory (DFT) calculations. The surface and edge structures of 2DCu20 were resolved at the atomic level and found to exhibit a graphene-like latticestructure. Cu20 NSs grew preferentially at the face centered cubic (fcc) domains ofAu(111). Depending on the annealing temperature, the shapes and structuresof Cu20 NSs were found to vary from elongated islands with a defectivehexagonal lattice (mostly topological 5-7 defects) to triangular NSs with analmost-perfect hexagonal lattice. The edge structures of Cu20 NSs also variedwith the annealing temperature, from predominantly the arm-chair 56 structureat 400 K to almost exclusively the zig-zag structure at 600 K. DFT calculationssuggested that the herringbone ridges of Au(111) confined the growth andstructure of Cu20 NSs on Au(111). As such, the arm-chair edges of Cu20 NSs,which are less stable than the zig-zag edges, could be exposed preferentially at400 K. Cu20 NSs developed into the thermodynamically-favored triangular formand exposed zig-zag edges at 600 K, when the Au(111) substrate became mobile.The confined growth of 2D cuprous oxide on Au(111) demonstrated the importanceof metal-oxide interactions in tuning the structures of supported 2D oxide NSs. | Qingfei Liu Nannan Han Shengbai Zhang Jijun Zhao Fan Yang Xinhe Bao | 2018 | Nano Research2018，11，11： | 0 |
| 8 | Formation mechanism of twin domain boundary in 2D materials: The case for WTe2显示文摘Our scanning tunneling microscopy (STM) study observes, for the first time, twin domain boundary (TDB) formations on the surface of WTe2 single crystal, which is glued by solidifying indium to Si substrate. In these TDB regions, a large inhomogeneous strain field, especially a critical shear strain of about 7%, is observed by geometric phase analysis. This observation does not obey the old believe that a small mechanical stress is sufficient to drive thermally-induced TDB formations in two-dimensional materials. To resolve the contradiction, we perform density functional theory calculations combined with elasticity theory analysis, which show that TDBs on WTe2 are entirely displacement-induced, for which a critical strain is necessary to overcome the onset barrier. | Guan-Yong Wang Weiyu Xie Dan Xu Hai-Yang Ma Hao Yang Hong Lu Hao-Hua Sun Yao-Yi Li Shuang Jia Liang Fu Shengbai Zhang Jin-Feng Jia | 2019 | Nano Research2019，12，3： | 0 |
| 9 | Quantum anomalous Hall effect in two-dimensional Cu-dicyanobenzene coloring-triangle lattice显示文摘Metrics details Abstract Magnetic two-dimensional(2D)topological insulators with spontaneous magnetization have been predicted to host quantum anomalous Hall effects(QAHEs).For organic topological insulators,the QAHE only exists in honeycomb or Kagome organometallic lattices based on theoretical calculations.Recently,coloring-triangle(CT)lattice has been found to be mathematically equivalent to a Kagome lattice,suggesting a potential 2D lattice to realize QAHE.Here,based on first-principles calculations,we predict an organometallic CT lattice,Cu-dicyanobenzene(DCB),to be a stable QAH insulator.It exhibits ferromagnetic(FM)properties as a result of the charge transfer from metal atoms to DCB molecules.Moreover,based on the Ising model,the Curie temperature of the FM ordering is calculated to be around 100 K.Both the Chern numbers and the chiral edge states of the semi-infinite Cu-DCB edge structure,which occur inside the spin-orbit coupling band gap,confirm its nontrivial topological properties.These make the Cu-DCB CT lattice an ideal candidate to enrich the family of QAH insulators. | Yixuan Gao Yu-Yang Zhang Jia-Tao Sun Lizhi Zhang Shengbai Zhang Shixuan Du | 2020 | Nano Research2020，13，6： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员