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5篇 您的检索式:作者名="Sufeng Fan"
    题名 作者 年代 出处 被引量
1Genotype-phenotype correlation in MYH9-related thrombocytopenia显示文摘Dong Fan Li Sufeng Pujol-Moix N 2005Br J Haematol2005,130,:1
2Tailoring mechanical properties of PμSL 3D-printed structures via size effect显示文摘Projection micro stereolithography(PμSL)has emerged as a powerful three-dimensional(3D)printing technique for manufacturing polymer structures with micron-scale high resolution at high printing speed,which enables the production of customized 3D microlattices with feature sizes down to several microns.However,the mechanical properties of as-printed polymers were not systemically studied at the relevant length scales,especially when the feature sizes step into micron/sub-micron level,limiting its reliable performance prediction in micro/nanolattice and other metamaterial applications.In this work,we demonstrate that PμSL-printed microfibers could become stronger and significantly more ductile with reduced size ranging from 20μm to 60μm,showing an obvious size-dependent mechanical behavior,in which the size decreases to 20μm with a fracture strain up to~100%and fracture strength up to~100 MPa.Such size effect enables the tailoring of the material strength and stiffness of PμSL-printed microlattices over a broad range,allowing to fabricate the microlattice metamaterials with desired/tunable mechanical properties for various structural and functional applications.Wenqiang Zhang Haitao Ye Xiaobin Feng Wenzhao Zhou Ke Cao Maoyuan Li Sufeng Fan Yang Lu 2022International Journal of Extreme Manufacturing2022,4,4:1
3Enhanced tensile ductility of tungsten microwires via high-density dislocations and reduced grain boundaries显示文摘Despite being strong with many outstanding physical properties,tungsten is inherently brittle at room temperature,restricting its structural and functional applications at small scales.Here,a facile strategy has been adopted,to introduce high-density dislocations while reducing grain boundaries,through electron backscatter diffraction(EBSD)-guided microfabrication of cold-drawn bulk tungsten wires.The designed tungsten microwire attains an ultralarge uniform tensile elongation of~10.6%,while retains a high yield strength of~2.4 GPa.in situ TEM tensile testing reveals that the large uniform elongation of tungsten microwires originates from the motion of pre-existing high-density dislocations,while the subsequent ductile fracture is attributed to crack-tip plasticity and the inhibition of grain boundary cracking.This work demonstrates the application potential of tungsten microcomponents with superior ductility and workability for micro/nanoscale mechanical,electronic,and energy systems.Chaoqun Dang Weitong Lin Fanling Meng Hongti Zhang Sufeng Fan Xiaocui Li Ke Cao Haokun Yang Wenzhao Zhou Zhengjie Fan Ji-jung Kai Yang Lu 2021Journal of Materials Science & Technology2021,,36:0
4Compressive elastic behavior of single-crystalline 4H-silicon carbide(SiC) nanopillars显示文摘As a wide-bandgap semiconductor, 4H-SiC is an ideal material for high-power and high-frequency devices, and plays an increasingly important role in developing our country’s future electric vehicles and 5G techniques. Practical applications of SiCbased devices largely depend on their mechanical performance and reliability at the micro-and nanoscales. In this paper, singlecrystal [0001]-oriented 4H-SiC nanopillars with the diameter ranging from ~200 to 700 nm were microfabricated and then characterized by in situ nanomechanical testing under SEM/TEM at room temperature. Loading-unloading compression tests were performed, and large, fully reversible elastic strain up to ~6.2% was found in nanosized pillars. Brittle fracture still occurred when the max strain reached ~7%, with corresponding compressive strength above 30 GPa, while in situ TEM observation showed few dislocations activated during compression along the [0001] direction. Besides robust microelectromechanical system(MEMS), flexible device and nanocomposite applications, the obtained large elasticity in [0001]-oriented 4H-SiC nanopillars can offer a fertile opportunity to modulate their electron mobility and bandgap structure by nanomechanical straining,the so called 'elastic strain engineering', for novel electronic and optoelectronic applications.FAN SuFeng LI XiaoCui FAN Rong LU Yang 2021Science China(Technological Sciences)2021,64,1:0
5High elasticity of CsPbBr_(3) perovskite nanowires for flexible electronics显示文摘Due to the enhanced ambient structural stability and excellent optoelectronic properties, all-inorganic metal halide perovskite nanowires have become one of the most attractive candidates for flexible electronics, photovoltaics and optoelectronics. Their elastic property and mechanical robustness become the key factors for device applications under realistic service conditions with various mechanical loadings. Here, we demonstrate that high tensile elastic strain (∼ 4% to ∼ 5.1%) can be achieved in vapor-liquid-solid-grown single-crystalline CsPbBr_(3) nanowires through in situ scanning electron microscope (SEM) buckling experiments. Such high flexural elasticity can be attributed to the structural defect-scarce, smooth surface, single-crystallinity and nanomechanical size effect of CsPbBr_(3) nanowires. The mechanical reliability of CsPbBr_(3) nanowire-based flexible photodetectors was examined by cyclic bending tests, with no noticeable performance deterioration observed after 5,000 cycles. The above results suggest great application potential for using all-inorganic perovskite nanowires in flexible electronics and energy harvesting systems.Xiaocui Li You Meng Rong Fan Sufeng Fan Chaoqun Dang Xiaobin Feng Johnny C.Ho Yang Lu 2021Nano Research2021,14,11:0
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