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5篇 您的检索式：作者名="Temiz L"

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		题名	作者	年代	出处	被引量
	1	Effects of Lipoprotein-Associated Phospholipase A2 on Arginase/Nitric Oxide Pathway in Hemodialysis Patients显示文摘	Ay&scedil egü l Korkmaz Tekta&scedil Sema Uslu Ahmet U&gbreve ur Yalç in Garip &Scedil ahin Gö khan Temiz Mehmet Kara Halide Edip Temel Emine Sü tken Demirkan Ertu&gbreve rul Ç olak Ö mer Ç olak	2012	Renal Failure2012，，6：	1
	2	Fungal and termite resistance of wood treated with 4-methoxytrityl tetrafluomborate 显示文摘	TEMIZ L KARTAL S N ALFREDSEN G	2006	Holz Roh Werkstoff2006，64，：	1
	3	Fungal and termite resistance of wood treated with 4 - methoxytrityl tetrafluoroborate 显示文摘	Temiz L Kartal SN Alfredsen G	2006	Holz Roh Werkstoff2006，64，：	1
	4	The dynamic compensation temperature in a kinetic spin-5/2 Ising model on a hexagonal lattice显示文摘We present a study of the dynamic behavior of a two-sublattice spin-5/2 Ising model with bilinear and crystal-field interactions in the presence of a time-dependent oscillating external magnetic field on alternating layers of a hexagonal lattice by using the Glauber-type stochastic dynamics.The lattice is formed by alternate layers of spins σ=5/2 and S=5/2.We employ the Glauber transition rates to construct the mean-field dynamic equations.First,we investigate the time variations of the average sublattice magnetizations to find the phases in the system and then the thermal behavior of the dynamic sublattice magnetizations to characterize the nature(first-or second-order) of the phase transitions and to obtain the dynamic phase transition(DPT) points.We also study the thermal behavior of the dynamic total magnetization to find the dynamic compensation temperature and to determine the type of the dynamic compensation behavior.We present the dynamic phase diagrams,including the dynamic compensation temperatures,in nine different planes.The phase diagrams contain seven different fundamental phases,thirteen different mixed phases,in which the binary and ternary combination of fundamental phases and the compensation temperature or the L-type behavior strongly depend on the interaction parameters.	mt Temizer Aysegl Ozkιlι	2013	Chinese Physics B2013，22，3：	0
	5	A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN_xAs_yP_(1-x-y)/GaP quantum wells on GaP substrates显示文摘The GaP-based dilute nitride direct band gap material Ga(NAsP) is gaining importance due to the monolithic integration of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga(NAsP)/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs on GaP substrates. We examine the effect of nitrogen(N) concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs with that of the GaNxAsyP1-x-y/AlzGa1-zP QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and Al into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.	O L nsal B Gnül M Temiz	2014	Chinese Physics B2014，23，7：	0

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