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13篇 您的检索式：作者名="Wallart"

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		题名	作者	年代	出处	被引量
	1	Raman spectroscopic study of LiAlCl4/SOCl2/SO2 systems显示文摘	Dhamelincourt M C Wallart F Barbier P	1985	Journal of Power Sources1985，14，13：	1
	2	A temporal fusion strategy for cross-camera data association 显示文摘	Motamed C Wallart O	2007	Pattern Recognition Letters(S0167-8655)2007，28，2：	1
	3	A temporal fusion strategy for crosscamera data association 显示文摘	MOTAMED C WALLART O	2007	Pattern Recognition Letters2007，28，2：	1
	4	Bonding in skutterudites: Combined experimental and theoretical characterization of CoSb3 显示文摘	LEFEBVRE-DEVOS I LASSALLE M WALLART X	2001	Physical Review B2001，63，：	1
	5	A Temporal Fusion Strategy for Cross-Camera Data Association显示文摘	Motamed C Wallart O		0，，02：	1
	6	High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning显示文摘	PLISSARD S LARRIEU G WALLART X	2011	Nanotechnology2011，22，27：	1
	7	A temporal fusion strategy for cross-camera data association显示文摘	MOTAMED C WALLART O	2007	Pattern Recognition Letters2007，28，2：	1
	8	Tunnel junctions in a III-V nanowire by surface engineering显示文摘	Salman Nadar Chloe Rolland Jean-Frangois Lampin Xavier Wallart Philippe Caroff Renaud Leturcq	2015	Nano Research2015，8，3：	1
	9	Truly quantitative XPS characterization of organic monolayers on silicon: study of alkyl and alkoxy monolayers on H--Si (111) 显示文摘	WALLART X HENRY de VILLENEUVE C AL- LONGUE P	2005	J Am Chem Soc2005，127，21：	1
	10	Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-χInxP layers显示文摘	Wallart X Schuler O Deresmes D	2000	Appl Phys Lett2000，76，5：	1
	11	Truly quantitative XPS characterization of organic monolayers on silicon:study of alkyl and alkoxy monolayers on H-Si ( 111 ) 显示文摘	WALLART X DE VILLENEUVE C H ALLONGUE P J	2005	Am Chem Soc2005，127，：	1
	12	Amorpha -4,11-diene synthase catalyse the first probable step in artemisinin biosynthesis显示文摘	Bouwmeester H J Wallart T E Janssen M H A	1999	Phytochemistry1999，52，：	1
	13	Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts显示文摘Three-dimensional(3D)nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport.In this context,Ⅲ-Ⅴ semiconductor-based nanowires with low electron effective mass and strong spin-orbit coupling are particularly investigated because of their exceptional quantum transport properties and the good electrostatic control they provide.Among the main challenges involved in the processing of these nanodevices are(i)the management of the gate stack which requires ex-situ passivation treatment to reduce the density of traps at the oxide/semiconductor interface,(ii)the ability to get good ohmic contacts for source and drain electrodes and(iii)the scalability and reliability of the process for the fabrication of complex architectures based on nanowire networks.In this paper,we show that selective area molecular beam epitaxy of in-plane InGaAs/InP core-shell nanowires with raised heavily doped source and drain contacts can address these different issues.Electrical characterization of the devices down to 4 K reveals the positive impact of the InP shell on the gate electrostatic control and effective electron mobility.Although comparable to the best reported values for In(Ga)As nanostructures grown on InP,this latter is severely reduced for sub-100 nm channel highlighting remaining issue to reach the ballistic regime.	Alexandre Bucamp Christophe Coinon David Troadec Sylvie Lepilliet Gilles Patriarche Xavier Wallart Ludovic Desplanque	2020	Nano Research2020，13，1：	0

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