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| 1 | Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching显示文摘In this work,we propose to reveal the subsurface damage(SSD)of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching.Under UV illumination,SSD acts as a photoluminescence-black defect.The selective photo-chemical etching reveals SSD as the ridge-like defect.It is found that the ridge-like SSD is still crystalline 4H-SiC with lattice distortion.The molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines,which are typical features of scratches.This means that the underlying scratches under mechanical stress give rise to the formation of SSD in 4H-SiC wafers.SSD is incorporated into 4H-SiC wafers during the lapping,rather than the chemical mechanical polishing(CMP). | Wenhao Geng Guang Yang Xuqing Zhang Xi Zhang Yazhe Wang Lihui Song Penglei Chen Yiqiang Zhang Xiaodong Pi Deren Yang Rong Wang | 2022 | Journal of Semiconductors2022，43，10： | 2 |
| 2 | Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits显示文摘Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers.In this work,we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in 4H-SiC.In n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°,8°−15°and 2°−4°,respectively.In semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34°and 21°−24°,respectively.The inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrimination and statistic of dislocations in 4H-SiC.More significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and TSDs.This enables to distinguish TMDs from TSDs in 4H-SiC. | Guang Yang Hao Luo Jiajun Li Qinqin Shao Yazhe Wang Ruzhong Zhu Xi Zhang Lihui Song Yiqiang Zhang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang | 2022 | Journal of Semiconductors2022，43，12： | 2 |
| 3 | Doping Silicon Wafers with Boron by Use of Silicon Paste显示文摘In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy(SIMS) and sheet resistance measurements. | Yu Gao Shu Zhou Yunfan Zhang Chen Dong Xiaodong Pi Deren Yang | 2013 | Journal of Materials Science & Technology2013，29，7： | 2 |
| 4 | Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning显示文摘With advances in Si-based technology infrastructures and the rapid integration of Si-based optoelectronics, Si-based optoelectronic synaptic devices have the potential to greatly facilitate the large-scale deployment of neuromorphic computing. The incorporation of solution-processable polymer semiconductors into Si-based optoelectronics may enable the cost-effective fabrication of optoelectronic synaptic devices.Poly(3-hexylthiophene)(P3HT) is a semiconducting polymer used to manufacture optoelectronic synaptic transistors with P3HT channels and Si gates. The gate dielectric between them consists of a SiO2 layer.Hybrid inorganic-organic Si/P3HT optoelectronic synaptic transistors can mimic synapses when exposed to optical and electrical stimuli. The Si/P3HT synaptic devices can spatiotemporally integrate optical and electrical stimuli to mimic cross-modal learning. | Yayao LI Yue WANG Lei YIN Wen HUANG Wenbing PENG Yiyue ZHU Kun WANG Deren YANG Xiaodong PI | 2021 | Science China(Information Sciences)2021，64，6： | 2 |
| 5 | Light-emitting diodes based on colloidal silicon quantum dots显示文摘Colloidal silicon quantum dots(Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes(LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end. | Shuangyi Zhao Xiangkai Liu Xiaodong Pi Deren Yang | 2018 | Journal of Semiconductors2018，39，6： | 2 |
| 6 | Spin-coating silicon- quantum-dot ink to improve solar cell efficiency 显示文摘 | Xiaodong Pi Qing Li Dongsheng Li | 2011 | Solar Energy Materials & Solar Ceils2011，，95： | 1 |
| 7 | Bioinspired molecules design for bilateral synergistic passivation in buried interfaces of planar perovskite solar cells显示文摘Trap-mediated energy loss in the buried interface with non-exposed feature constitutes one of the serious challenges for achieving high-performance perovskite solar cells(PSCs).Inspired by the adhesion mechanism of mussels,herein,three catechol derivatives with functional Lewis base groups,namely 3,4-Dihydroxyphenylalanine(DOPA),3,4-Dihydroxyphenethylamine(DA)and 3-(3,4-Dihydroxyphenyl)propionic acid(DPPA),were strategically designed.These molecules as interfacial linkers are incorporated into the buried interface between perovskite and SnO_(2) surface,achieving bilateral synergetic passivation effect.The crosslinking can produce secondary bonding with the undercoordinated Pb^(2+) and Sn^(4+) defects.The PSCs treated with DOPA exhibited the best performance and operational stability.Upon the DOPA passivation,a stabilized power conversion efficiency(PCE)of 21.5%was demonstrated for the planar PSCs.After 55 days of room-temperature storage,the unencapsulated devices with the DOPA crosslinker could still maintain 85%of their initial performance in air under relative humidity of-15%.This work opens up a new strategy for passivating the buried interfaces of perovskite photovoltaics and also provides important insights into designing defect passivation agents for other perovskite optoelectronic devices,such as light-emitting diodes,photodetectors,and lasers. | Bin Wang Junjie Ma Zehua Li Gangshu Chen Qiang Gu Shuyao Chen Yiqiang Zhang Yanlin Song Jingbo Chen Xiaodong Pi Xuegong Yu Deren Yang | 2022 | Nano Research2022，15，2： | 1 |
| 8 | SJES14110700510601显示文摘 | Yi Ding Ryan Gresback Qiming Liu Shu Zhou Xiaodong Pi Tomohiro Nozaki | 2014 | Nano Energy2014，，： | 1 |
| 9 | Perovskite-Enhanced Silicon-Nanocrystal Optoelectronic Synaptic Devices for the Simulation of Biased and Correlated Random-Walk Learning显示文摘Silicon-(Si-)based optoelectronic synaptic devices mimicking biological synaptic functionalities may be critical to the development of large-scale integrated optoelectronic artificial neural networks.As a type of important Si materials,Si nanocrystals(NCs)have been successfully employed to fabricate optoelectronic synaptic devices.In this work,organometal halide perovskite with excellent optical asborption is employed to improve the performance of optically stimulated Si-NC-based optoelectronic synaptic devices.The improvement is evidenced by the increased optical sensitivity and decreased electrical energy consumption of the devices.It is found that the current simulation of biological synaptic plasticity is essentially enabled by photogating,which is based on the heterojuction between Si NCs and organometal halide perovskite.By using the synaptic plasticity,we have simulated the well-known biased and correlated random-walk(BCRW)learning. | Yiyue Zhu Wen Huang Yifei He Lei Yin Yiqiang Zhang Deren Yang Xiaodong Pi | 2020 | Research2020，，1： | 1 |
| 10 | 查看详情显示文摘 | Pi Xiaodong Chen Xiaobo Yang Deren | | 0，，20： | 1 |
| 11 | Synaptic devices based on semiconductor nanocrystals显示文摘To meet a growing demand for information processing,brain-inspired neuromorphic devices have been intensively studied in recent years.As an important type of neuromorphic device,synaptic devices have attracted strong attention.Among all the kinds of materials explored for the fabrication of synaptic devices,semiconductor nanocrystals(NCs)have become one of the preferred choices due to their excellent electronic and optical properties.In this review,we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs.Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices.Finally,we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. | Mingxuan BU Yue WANG Lei YIN Zhouyu TONG Yiqiang ZHANG Deren YANG Xiaodong PI | 2022 | Frontiers of Information Technology & Electronic Engineering2022，23，11： | 0 |
| 12 | Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)显示文摘The formation, structural and electronic properties of silicene oxides(SOs) that result from the oxidation of silicene on Ag(111) surface have been investigated in the framework of density functional theory(DFT).It is found that the honeycomb lattice of silicene on the Ag(111) surface changes after the oxidation. SOs are strongly hybridized with the Ag(111) surface so that they possess metallic band structures. Charge accumulation between SOs and the Ag(111) surface indicates strong chemical bonding, which dramatically affects the electronic properties of SOs. When SOs are peeled off the Ag(111) surface, however, they may become semiconductors. | Muhammad Ali Zhenyi Ni Stefaan Cottenier Yong Liu Xiaodong Pi Deren Yang | 2017 | Journal of Materials Science & Technology2017，33，7： | 0 |
| 13 | Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights显示文摘Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide(4H-SiC),which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals.However,the etching mechanism of 4H-SiC is limited misunderstood.In this letter,we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching,X-ray photoelectron spectroscopy(XPS)and first-principles investigations.The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol,respectively.The molten-KOH etching rate of the C face is higher than the Si face.Combining XPS analysis and first-principles calculations,we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten KOH.The faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable,and easier to be removed with molten alkali,rather than the C face being easier to be oxidized. | Guang Yang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang | 2024 | Journal of Semiconductors2024，45，1： | 0 |
| 14 | Hyperdoped silicon:Processing,properties,and devices显示文摘Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measures.In this review we fo-cus on hyperdoped silicon(Si)by introducing methods used for the hyperdoping of Si such as ion implantation and laser dop-ing,discussing the electrical and optical properties of hyperdoped bulk Si,Si nanocrystals,Si nanowires and Si films,and present-ing the use of hyperdoped Si for devices like infrared photodetectors and solar cells.The perspectives of the development of hy-perdoped Si are also provided. | Zhouyu Tong Mingxuan Bu Yiqiang Zhang Deren Yang Xiaodong Pi | 2022 | Journal of Semiconductors2022，43，9： | 0 |
| 15 | Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals显示文摘As a leading surface modification approach,hydrosilylation enables freestanding silicon nanocrystals(Si NCs) to be well dispersed in a desired medium.Although hydrosilylation-induced organic layers at the NC surface may somehow retard the oxidation of Si NCs,oxidation eventually occurs to Si NCs after relatively long time exposure to air.We now investigated the oxidation of hydrosilylated Si NCs in the frame work of density functional theory(DFT).Three oxygen configurations that may be introduced by the oxidation of a Si NC are considered.It is found that a hydrosilylated Si NC is less prone to oxidation than a fully H-passivated Si NC in the point of view of thermodynamics.At the ground state,backbond oxygen(BBO) and hydroxyl(OH) hardly change the gap between the highest occupied molecular orbital(HOMO) and the lowest unoccupied molecular orbital(LUMO) of a hydrosilylated Si NC.At the excited state,the decrease in the HOMO-LUMO gap induced by the introduction of doubly bonded oxygen(DBO) is more significant than that induced by the introduction of BBO or OH.We have correlated the changes in the optical absorption(emission) of a hydrosilylated Si NC after oxidation to those of the HOMO—LUMO gap at the ground state(excited state). | Xiaodong Pi Rong Wang Deren Yang | 2014 | Journal of Materials Science & Technology2014，30，7： | 0 |
| 16 | Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity显示文摘Highly sensitive photodetectors operating at mid-infrared(MIR)wavelengths are urgently required for the applications of astronomy,optical communication,security monitoring,and so forth.However,further promoting the sensitivity in conventional MIR devices for a higher detectivity is challenging.Among the potential strategies,integrating localized surface plasmon resonance with MIR semiconductors is a promising approach to developing high-performance optoelectronics.Here we demonstrate a high-sensitivity boron(B)-doped silicon quantum dot(Si-QD)/HgCdTe(MCT)MIR photodetector.Because of plasmon-induced hot-hole tunneling and enhanced light absorption,the hybrid photodetector exhibits a high specific detectivity of~1.6×10^(9)cm·Hz^(1/2)·W-1(Jones)and a high-speed response(~224 ns for the rise time and~580 ns for the fall time)at room temperature.Furthermore,the device achieves high-performance spectral blackbody detection with a peak detectivity of up to 1.6×10^(11)Jones at~5.8μm under a cryogenic environment of 77 K,higher than that of bare MCT.This prominent enhancement can be attributed to the further suppression of hot-hole cooling due to a reduced phonon population at low temperatures,which facilitates more efficient hot-carrier extraction and contributes to ultrahigh sensitivity.The plasmonic material-integrated MCT architecture can pave the way for developing high-performance MIR photodetection. | Yueying CUI Zhouyu TONG Xinlei ZHANG Wenhui WANG Weiwei ZHAO Yuanfang YU Xiaodong PI Jialin ZHANG Zhenhua NI | 2023 | Science China(Information Sciences)2023，66，4： | 0 |
| 17 | Formation,Stability,Geometry and Band Structure of Organically Surface-Modified Germanane显示文摘Surface modification may be an effective means for controlling the properties of germanane,i.e.,hydrogenated germanene.In this work,we investigate the formation,stability,structure and electronic properties of surface-modified germanane that results from the hydrogermylation,alkoxylation,aminization or phenylation of germanane.By assuming the typical organic surface coverage of ~33%,we have compared organically surface-modified germanane with germanene and germanane in the framework of density functional theory.It is found that organically surface-modified germanane may all stably exist despite the endothermic nature of organic surface modification.Organic surface modification leads to the decrease of the Ge—Ge bond length and the Ge—Ge—Ge bond angle of germanane,while causing the buckling distance of germanane to increase.Hydrogenation makes germanene change from a semimetal to a directbandgap semiconductor.Organic surface modification further impacts the band structure of the resulting germanane.Hydrogermylated/alkoxylated germanane is a direct-bandgap semiconductor,while aminated/phenylated germanane is an indirect-bandgap semiconductor.All the organic surface modification gives rise to the increase of the bandgap of germanane. | Hui Jia Rong Wang Zhenyi Ni Yong Liu Xiaodong Pi Deren Yang | 2017 | Journal of Materials Science & Technology2017，33，1： | 0 |
| 18 | Erratum to:Improving near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity(vol 62,issue 10,page 1470,2019)显示文摘In the version of the article originally published in the volume 62,issue 10,2019 of Sci.China Mater,(page 1470-1478,https://doi.org/10.1007/s40843-019-9437-9),wrong images of Figs 3 and 4 were used.The corrected version appears below:the units of the x-axes in Fig.3h,the inset of Fig.4a,and Fig.4b,d should be h,s,s,and s,respectively. | Shuangyi Zhao Yue Wang Wen Huang Hao Jin Peiwen Huang Hu Wang Kun Wang Dongsheng Li Mingsheng Xu Deren Yang Xiaodong Pi | 2021 | Science China Materials2021，64，12： | 0 |
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