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| 1 | Theory of a Novel Voltage Sustaining (CB)- Layer for Power Devices显示文摘 | CHEN Xingbi | 1998 | Chinese Journal of Electronics1998，7，3： | 1 |
| 2 | Optimization of the specific On-Resistance of the COOLMOS 显示文摘 | XingBi Chen | 2001 | IEEE Transactions on Electron Device2001，48，2： | 1 |
| 3 | Optimization of the specific on-resistance of the COOLMOS 显示文摘 | Chen Xingbi Sin Johnny K O | 2001 | IEEE Trans Electron Devices2001，48，2： | 1 |
| 4 | New ' silicon limit' of power devices显示文摘 | Chen Xingbi Yang Hongqiang Cheng Min | 2002 | Solid-state Elec- tronics2002，46，8： | 1 |
| 5 | Theory of a novel voltage sustaining (CB)layer for power device显示文摘 | Chen Xingbi | 1998 | Chinese Journal of Electronics1998，7，3： | 1 |
| 6 | Theory of a novel voltage sustaining (CB) layer for power devices 显示文摘 | Chen Xingbi | 1998 | Mieroelectronic Journal1998，7，3： | 1 |
| 7 | INCREASING BREAKDOWN VOLTAGE OF LDMOST USING BURIED LAYER显示文摘A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakdown voltage. The analysis and the simulated results show that B-LDMOST can increase breakdown voltage, with almost negligible influence on the other parameters such as on-resistance, switching time, and so on. | Han Lei Ye Xingning Chen Xingbi (Institute of Microelectronics, University of Electrical Science and Technology of China,, Chengdu 610054) | 2003 | Journal of Electronics(China)2003，20，1： | 0 |
| 8 | An improved SOI trench LDMOST with double vertical high-k insulator pillars显示文摘An SOI trench LDMOST(TLDMOST)with ultra-low specific on-resistanceis proposed.It features double vertical high-k insulator pillars(Hk_1 and Hk_2)in the oxide trench,which are connected to the source electrode and drain electrode,respectively.Firstly,under reverse bias voltage,most electric displacement lines produced by the charges of the depleted drift region in the source side go through the Hk_1,and thus the average electric field strength under the source can be enhanced.Secondly,two additional electric field peaks are induced by the Hk_1,which further modulate the electric field in the drift region under the source.Thirdly,most electric displacement lines produced by the charges of the depleted drift region in the drain side enter into the Hk_2.This not only introduces one more electric field peak at the corner of the oxide trench around the Hk_2,but also forms the enhanced vertical reduced surface field effect,which modulates the electric field in the drift region under the drain.With the effects of the two Hk insulator pillars,the breakdown voltage(BV)and the drift region doping concentration are significantly improved.The simulation results indicate that compared with the oxide trench LDMOST(previous TLDMOST)with the same geometry,the proposed double Hk TLDMOST enhances the BV by 86%and reduces theby 88%. | Huan Li Haimeng Huang Xingbi Chen | 2018 | Journal of Semiconductors2018，39，9： | 0 |
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