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| 1 | Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation显示文摘二维的转变金属 dichalcogenides (TMD ) 的电的表演被结构的缺点的数字强烈影响。在这个工作,我们提供一条光分光镜的描述途径相关结构的缺点的数字和 WSe 2 设备的电的表演。electron-beam-lithographyprocessed WSe 2 的低温度的光致发光(PL ) 系列由于缺点一定的激子展出清楚的导致缺点的 PL 排出物,它将强烈降级电的表演。由采用一种 electron-beam-free 转移电极技术,我们成功地准备了包含缺点的有限数量的一台 backgated WSe 2 设备。约 200 厘米 2 | Zhangting Wu Zhongzhong Luo Yuting Shen Weiwei Zhao Wenhui Wang Haiyan Nan Xitao Guo Litao Sun Xinran Wang Yumeng You Zhenhua Ni | 2016 | Nano Research2016，9，12： | 8 |
| 2 | A tropical paleosol at high elevation in the Yulong Mountains and its implication on the uplift of the Tibetan Plateau显示文摘A paleosol dated for about 500-700 kaBP and developed on a glacial deposit at -3 000 in a.s.l. in the Yulong Mountains is studied using soil chemical, morphological and mineralogical methods. The analytical results indicate that this soil was formed under tropical and humid conditions and can be classified as red soil, which cannot be formed in the present alpine environment at the studied site. This implies that the southeast margin of the Tibetan Plateau has experienced intense uplift since the formation of the paleosol. According to the necessary conditions for the formation of the modern red soil in China, we estimate that the | Zhengtang Guo Xiaofeng Yao Xitao Zhao Lanying Wei | 2001 | Chinese Science Bulletin2001，46，1： | 5 |
| 3 | Investigation of multilayer domains in large-scale CVD monolayer graphene by optical imaging显示文摘CVD graphene is a promising candidate for optoelectronic applications due to its high quality and high yield.However,multi-layer domains could inevitably form at the nucleation centers during the growth.Here,we propose an optical imaging technique to precisely identify the multilayer domains and also the ratio of their coverage in large-scale CVD monolayer graphene.We have also shown that the stacking disorder in twisted bilayer graphene as well as the impurities on the graphene surface could be distinguished by optical imaging.Finally,we investigated the effects of bilayer domains on the optical and electrical properties of CVD graphene,and found that the carrier mobility of CVD graphene is seriously limited by scattering from bilayer domains.Our results could be useful for guiding future optoelectronic applications of large-scale CVD graphene. | Yuanfang Yu Zhenzhen Li Wenhui Wang Xitao Guo Jie Jiang Haiyan Nan Zhenhua Ni | 2017 | Journal of Semiconductors2017，38，3： | 2 |
| 4 | Strong ferromagnetism of reduced graphene oxide显示文摘 | Sai Qin Xitao Guo Yanqiang Cao Zhenhua Ni Qingyu Xu | 2014 | Carbon2014，，： | 1 |
| 5 | Gas sensing selectivity of oxygen-regulated SnO2 films with different microstructure and texture显示文摘The selectivity of gas sensing materials is increasingly important for their applications. The oxygenregulated SnO2 films with(110) and(101) preferred orientation were obtained through magnetron sputtering, followed by annealing treatment. Their micro-structure, surface morphology and gas response were investigated by advanced structural characterization and property measurement. The results showed that the as-prepared(110)-oriented SnO2 film was oxygen-rich and had more adsorption sites while the as-prepared(101)-oriented SnO2 film was oxygen-poor and more sensitive to de-oxidation.H2 gas sensitivity, response speed, selectivity between H2 and CO of the(110)-orientated SnO2 film was superior to that of the(101)-orientated SnO2 film. After treated at high temperature and high vacuum,the reduction of gas-sensing properties of the annealed(110) SnO2 film was much more than that of the annealed(101) SnO2 film. The lattice oxygen was responsible for the difference in gas-sensing response between(110) and(101)-oriented SnO2 films under oxygen regulation. This work indicated the gassensing selectivity of the different crystal planes in SnO2 film, providing a significant reference for design and extension of the related materials. | Ruiwu Li Yanwen Zhou Maolin Sun Zhen Gong Yuanyuan Guo Xitao Yin Fayu Wu Wutong Ding | 2019 | Journal of Materials Science & Technology2019，35，10： | 0 |
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