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您的检索式：作者名="Yabao Zhang"
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| 1 | Growth and characterization ofβ-Ga_(2)O_(3)thin films grown on off-angled Al_(2)O_(3)substrates by metal-organic chemical vapor deposition显示文摘Beta-gallium oxide(β-Ga_(2)O_(3))thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<>by metal-organic chemical vapor deposition(MOCVD).The structural properties and surface morphology of as-grownβ-Ga_(2)O_(3)thin films were investigated in detail.It was found that by using thin buffer layer and mis-cut substrate technology,the full width at half maximum(FWHM)of the()diffraction peak of theβ-Ga_(2)O_(3)film is decreased from 2°on c-plane(0001)Al_(2)O_(3)substrate to 0.64°on an 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.The surface root-mean-square(RMS)roughness can also be improved greatly and the value is 1.27 nm for 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.Room temper-ature photoluminescence(PL)was observed,which was attributed to the self-trapped excitons formed by oxygen and gallium vacancies in the film.The ultraviolet-blue PL intensity related with oxygen and gallium vacancies is decreased with the increas-ing mis-cut angle,which is in agreement with the improved crystal quality measured by high resolution X-ray diffraction(HR-XRD).The present results provide a route for growing high qualityβ-Ga_(2)O_(3)film on Al_(2)O_(3)substrate. | Yabao Zhang Jun Zheng Peipei Ma Xueyi Zheng Zhi Liu Yuhua Zuo Chuanbo Li Buwen Cheng | 2022 | Journal of Semiconductors2022，43，9： | 3 |
| 2 | Investigation on n-Type(-201)β-Ga_(2)O_(3)Ohmic Contact via Si Ion Implantation显示文摘Heavy doped n-typeβ-G_(2)O_(3)(HD-G_(2)O_(3))was obtained by employing Si ion implantation technology on unintentionally dopedβ-G_(2)O_(3)single crystal substrates.To repair the G_(2)O_(3)lattice damage and activate the Si after implantation,the implanted substrates were annealed at 950℃,1000℃,and 1100℃,respectively.High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃.The minimum specific contact resistance is 9.2×10^(-5)Ω·cm^(2),which is attributed to the titanium oxide that is formed at the Ti/G_(2)O_(3)interface via rapid thermal annealing at 480℃.Based on these results,the lateralˇ-G_(2)O_(3)diodes were prepared,and the diodes exhibit high forward current density and low specific on-resistance. | Peipei Ma Jun Zheng Yabao Zhang Zhi Liu Yuhua Zuo Buwen Cheng | 2023 | Tsinghua Science and Technology2023，28，1： | 0 |
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