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1篇 您的检索式：作者名="Yaliang Gui"

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		题名	作者	年代	出处	被引量
	1	Electrical programmable multilevel nonvolatile photonic random-access memory显示文摘Photonic Random-Access Memories(P-RAM)are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links.Emerging Phase-Change Materials(PCMs)have been showed multilevel memory capability,but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges.Here we demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material(Ge2Sb2Se5,GSSe)with ultralow absorption in the amorphous state.A zero-staticpower and electrically programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform,featuring efficient amplitude modulation up to 0.2 dB/μm and an ultralow insertion loss of total 0.12 dB for a 4-bit memory showing a 100×improved signal to loss ratio compared to other phase-change-materials based photonic memories.We further optimize the positioning of dual microheaters validating performance tradeoffs.Experimentally we demonstrate a half-a-million cyclability test showcasing the robust approach of this material and device.Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks,LiDAR,and sensors for example.	Jiawei Meng Yaliang Gui Behrouz Movahhed Nouri Xiaoxuan Ma Yifei Zhang Cosmin-Constantin Popescu Myungkoo Kang Mario Miscuglio Nicola Peserico Kathleen Richardson Juejun Hu Hamed Dalir Volker J.Sorger	2023	Light(Science & Applications)2023，12，11：	0

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