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您的检索式：作者名="Yanfu Ding"
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| 1 | SENP5 deteriorates traumatic brain injury via SUMO2- dependent suppression of E2F1 SUMOylation显示文摘Traumatic brain injury(TBI)represents a main public health concern during the past decade,attracting considerable interest because of its rising prevalence,wide-ranging risk factors and lifelong familial and societal influence.SUMO2 can conjugate to substrates upon various cellular stresses.Nevertheless,whether and how SUMO2-specific proteases partake in TBI is less understood.The aim of this study is to dissect the effects of SUMO-specific peptidase 5(SENP5)on accentuating TBI in rats in an effort to unveil its underlying mechanism.SENP5 is overexpressed in hippocampal tissues of TBI rats,and inhibition of SENP5 reduces neurological function scores,decreases brain water content,inhibits apoptosis in hippocampal tissues,and attenuates brain injury caused in rats.Moreover,SENP5 inhibits the SUMOylation level of E2F transcription factor 1(E2F1)and increases the protein expression of E2F1.Silencing of E2F1 blocks the p53 signaling pathway.Overexpression of E2F1 partially reverses the protective effect of sh-SENP5 on TBI in rats.These findings reveal an essential role of SENP5 and the SUMOylation status of E2F1 in the TBI development. | Yanfu Ding Feifei Chen Weitao Yang Xiaobin Fu Yuanyuan Xie | 2023 | Acta Biochimica et Biophysica Sinica2023，55，8： | 0 |
| 2 | Ultra-thin Body Buried In_(0.35)Ga_(0.65)As Channel MOSFETs with Extremely Low Off-current on Si Substrates显示文摘In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/Al_(2)O_(3)/In P under different annealing conditions. A minimum interface trap density of 3×10^(11) cm^(-2) eV^(-1) is obtained without postmetallization annealing treatment.Additionally, utilizing Ti/Al_(2)O_(3)/In P MOS gate stack,we fabricated ultra-thin body buried In0.35 Ga0.65 As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200 nm gate length device with extremely low off-current of 0.6 n A/μm, and on-off ratio of 3.3×10^(5), is demonstrated by employing buried low indium(In_(0.35) Ga_(0.65) As) channel with In P barrier/spacer device structure, giving strong potential for future highperformance and low-power applications. | WANG Bo DING Peng FENG Ruize WANG Yanfu LIU Xiaoyu SUN Tangyou CHEN Yonghe LIU Xingpeng LI Qi LI Yue LIU Yingbo YIN Yihui ZHAO Hao ZHANG Wei LI Haiou JIN Zhi | 2021 | Chinese Journal of Electronics2021，30，6： | 0 |
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