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21篇 您的检索式:作者名="ZUBEL I"
    题名 作者 年代 出处 被引量
1Silicon anisotropic etehing alkaline solutions I: the geometric description of figures deve-loped under etching Si (100) in various solutions 显示文摘ZUBEL I BARYCKA I 1998Sensors and Actuators A: Physical1998,70,3:1
2The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions显示文摘Zubel I Kramkowska M 2001Senors and Actuators A2001,93,:1
3The influence of atomic configuration of (hkl) planes on adsorption processes associated with anisotropie etching of silieon显示文摘ZUBEL I 2001Sensors and Actua- tors A2001,94,12:1
4Silicon anisotropic etching in TMAH solutions containing alcohol and surfactant additives显示文摘ZUBEL I KRAMKOWSKA M ROLA K 0,,:1
5Silicon anisotropic etching in KOH and TMAH with modified surface tension显示文摘KRAMKOWSKA M ZUBEL I 0,,01:1
6Application of triton X 100 surfactant for silicon anisotropic etching in KOH- based solutions 显示文摘ROLA K P ZUBEL I 2013Materials science poland2013,31,4:1
7The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions 显示文摘Zubel I Kramkowska M 2001Sens Actuator2001,93,2:1
8Silicon anisotropic etching in alkaline II on the influence of anisotrophy on the smoothness of etched surfaces 显示文摘ZUBEL I 1998Sensors and Actuators A: Physic1998,70,:1
9Silicon anisotropic etching in KOH-isopropanol etchant显示文摘 Barycka I 1995Sensors and Actuators1995,48,:1
10The geometric description of figures developed under etching Si (100) in various solutions显示文摘 Barycka I 1998Sensors and Actuators1998,70,:1
11On the influence of anisotropy on the smoothness of etched surfaces显示文摘 2001Sensors and Actuators2001,87,:1
12On the possibility of spatial structures forming in the course of Si (100) anisotropic etching in KOH and KOH+IPA solutions显示文摘 2000Sensors and Actuators2000,84,:1
13The effect of organic and inorganic agents on silicon anisotropic etching process显示文摘 1998Sensors and Actuators1998,70,:1
14Silicon anisotropic etching in alkaline solutions I: the geometric description of figures developed under etching Si(100) in various solutions显示文摘ZUBEL I BARYCKA I 1998Sensors and Actuators A1998,70,:1
15The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions 显示文摘Zubel I Kramkowska M 2001Senors and Actuators A2001,93,:1
16Silicon anisotropic etching in alkaline solution II on the influence of anisotropy on the smoothness of etched surfaces 显示文摘ZUBEL I 1998Sensors and Actuators A1998,70,:1
17Silicon anisotropic etching in alkaline solutions Ⅲ: On the possibility of spatial structure forming in the course of Si(100) aniso tropic etching in KOH+IPA solutions显示文摘Zubel I 2000Sensors and ActuatorsA2000,84,:1
18The influence of atomic configuration of (hkl) planes on adsorption processes associated with anisotropic etching of silicon显示文摘ZUBEL I 2001Sensors and Actuators2001,94,12:1
19Etch rates and morphology of silicon (hkl) surfaces etched in KOH and KOH saturated with isopropanol solutions 显示文摘Zubel I Kramkowska M 2004Sensors and Actuators A: Physical2004,115,2:1
20Etch rates and morphology of sili- con (hkl) surfaces etched in KOH and KOH saturated with isopropanol solutions显示文摘Zubel I Kramkowska M 2004Sens Actuators A2004,115,23:1
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