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1篇 您的检索式：作者名="Zhanqiang Ren"

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		题名	作者	年代	出处	被引量
	1	High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W显示文摘A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance.The laser chips were p-side-down mounted on the AlN submount,and then tested at continuous wave(CW)operation with the heat-sink temperature setting to 25℃using a thermoelectric cooler(TEC).As high as 60.5%of the wall-plug efficiency(WPE)was achieved at the injection current of 11 A.The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12°C.Accelerated life-time test showed that the laser diodes had lifetimes of over 62111 h operating at rated power of 10 W.	Zhanqiang Ren Qingmin Li Bo Li Kechang Song	2020	Journal of Semiconductors2020，41，3：	3

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