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		题名	作者	年代	出处	被引量
	1	Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy显示文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.	FANG HeNan ZHANG Rong LIU Bin LI YeCao FU DeYi LI Yi XIE ZiLi ZHUANG Zhe ZHENG YouDou WU JingBo JIN BiaoBing CHEN Jian WU PeiHeng	2013	Science China(Physics,Mechanics & Astronomy)2013，56，11：	6
	2	Spontaneous emission rate and optical amplification of Er3+ in double slot waveguide显示文摘The spontaneous emission(SE) of Er3+ embedded in a double slot dielectric structure was studied by a quantum-electrodynamical formalism. The study shows that the slot width and the position of Er3+ in slot structure have a significant effect on the SE. The double slot waveguides were fabricated by embedding two low-index Er/Yb silicate material layers into high-index silicon. The radiative efficiency of Er3+ in the double slot waveguides is found to be higher than that of the single slot waveguide, which is consistent with the theory simulation. The 0.67 d B signal enhancement at 1.53 ?m in a 4.6-mm-long slot waveguide was observed pumped by 1476 nm laser. These results show the relevance of our model to study the SE processes in multilayer structures and are important for future realization of silicon-compatible active optical devices.	WANG XingJun JIANG LingJun GUO RuiMin YE Rui ZHOU ZhiPing	2015	Science China(Physics,Mechanics & Astronomy)2015，58，12：	0

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