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| 1 | Less than 6 GHz resolution THz spectroscopy of water vapor显示文摘在许多的技术象石油工业一样回答的兆兆赫(THz ) 的申请要求高分辨率和多功能认识到不同材料的精确察觉。在这学习水里,在空气的蒸汽与 shortand 被扫描有不同扫描范围的长路径的 THz 分光计。在在长路径的系统的 THz 典型的线的半最大值的完整的宽度到达了不到 7 GHz 和那在突然完成了 5.5 GHz,显示水蒸汽的 THz 光谱学能被用来校准 THz 设备。有正确扫描范围的 THz 系统能是为有由于高分辨率的很类似的结构的固体,液体和气体的材料的鉴定的一种有希望的选择。研究证明多功能的 THz 测试能在许多领域里通过分辨率和采样空格的平衡被认识到,例如油气体工业。 | ZHAN HongLei SUN ShiNing ZHAO Kun LENG WenXiu BAO RiMa XIAO LiZhi ZHANG ZhenWei | 2015 | Science China(Technological Sciences)2015，58，12： | 10 |
| 2 | Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy显示文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials. | FANG HeNan ZHANG Rong LIU Bin LI YeCao FU DeYi LI Yi XIE ZiLi ZHUANG Zhe ZHENG YouDou WU JingBo JIN BiaoBing CHEN Jian WU PeiHeng | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，11： | 6 |
| 3 | 基于光学传输矩阵的太赫兹时域光谱分析显示文摘提出了基于光学传输矩阵的提取太赫兹时域光谱光学参数的理论方法。相比于传统的提取主脉冲方法,该方法在未来可以推广用以分析主脉冲与次脉冲无法分辨的太赫兹时域光谱。利用该方法得到了蓝宝石(α-Al2O3)样品在0.3~1.0太赫兹频段的复折射率。通过与利用提取主脉冲方法得到的复折射率的结果比较,验证了基于光学传输矩阵的理论分析方法的可靠性和精确性。所提出的方法为今后主次脉冲无法分辨的太赫兹时域光谱的准确分析提供了坚实的理论基础。 | 方贺男 陶志阔 | 2014 | 发光学报2014，35，11： | 4 |
| 4 | High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice显示文摘Significantly improved electrostatic discharge(ESD)properties of InGaN/GaN-based UV light-emitting diode(LED)with inserting p-GaN/p-AlGaN superlattice(p-SLs)layers(instead of p-AlGaN single layer)between multiple quantum wells and Mg-doped GaN layer are reported.The pass yield of the LEDs increased from 73.53%to 93.81%under negative 2000 V ESD pulses.In addition,the light output power(LOP)and efficiency droop at high injection current were also improved.The mechanism of the enhanced ESD properties was then investigated.After excluding the effect of capacitance modulation,high-resolution X-ray diffraction(XRD)and atomic force microscope(AFM)measurements demonstrated that the dominant mechanism of the enhanced ESD properties is the material quality improved by p-SLs,which indicated less leakage paths,rather than the current spreading improved by p-SLs. | HUANG Yong LI PeiXian YANG Zhuo HAO Yue WANG XiaoBo | 2014 | Science China(Physics,Mechanics & Astronomy)2014，57，5： | 2 |
| 5 | Different structural origins for different sized surface pits observed on a-plane GaN film显示文摘A correlation study between the observed surface morphology using high-resolution scanning electron microscopy(HRSEM) and the observed structural imperfections using transmission electron microscopy(TEM) has been conducted for a-plane Ga N. There are three different sized asymmetric surface pits: large pit of 500 nm–2 ?m in side length, medium pit of 50 nm in side length, and small pit with side lengths of less than 5 nm, which originate from incomplete island coalescence, screw dislocation, and partial dislocation(PD), respectively. Both screw dislocation and PD can produce pits on the free surface because they have a perpendicular line tension to the surface, which must remain in balance with the surface tension. The two types of dislocation lead to distinctive pit sizes because the PD has a smaller Burgers vector component along the dislocation line than the pure screw dislocation. A pit that is produced in the island-coalescing process is much larger than those caused by dislocations because island coalescence is a kinetic process that involves large-scale mass transportation, whereas the dislocation mediates the surface in the local area. These three types of surface pits sometimes interact with one another in space. The coalescence of the island determines the surface morphology at large scales, whereas the defects affect the details. | GAO ZhiYuan LI JiangJiang XUE XiaoWei CUI BiFeng XING YanHui ZOU DeShu | 2016 | Science China(Technological Sciences)2016，59，1： | 1 |
| 6 | GaN薄膜的太赫兹光谱响应研究显示文摘目前,太赫兹时域光谱(THz-TDS)已经成为研究固体光学参数及色散关系的有效工具。采用太赫兹时域光谱仪对纤锌矿结构GaN薄膜在0~8.0 THz范围内的吸收光谱、介电常数、折射率以及介电损耗等进行了研究。研究结果表明,频率为4.65 THz的太赫兹响应是由GaN的E2(low)声子振动模式主导的,获得的低频介电常数8.9和高频介电常数6.0与理论值接近;进一步研究了频率在4.24~4.40 THz之间的太赫兹介电常数响应谱,获得的GaN薄膜的中心振动频率与太赫兹吸收光谱一致,介电损耗值很小且逐渐趋近于0,表明GaN有良好的介电特性。得出的结论拓展了GaN基电子元器件在THz波段中的应用,对进一步研究GaN基电子元器件在THz波段的质量与可靠性具有借鉴意义。 | 韩烨 王党会 许天旱 | 2024 | 电子与封装2024，24，1： | 0 |
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