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| 1 | Oxidation of two-phase Cu-Cr alloys with different microstructures显示文摘The oxidation of PM Cu 50Cr, MA Cu 40Cr and MS Cu 40Cr alloys at 800 ℃ in 0.1 MPa O 2 was studied. The most important difference of their oxidation behaviors is the formation of an exclusive chromia scale on the surface of the MS Cu 40Cr alloy and a continuous chromia layer beneath an outer CuO layer corresponding MA Cu 40Cr alloy, while a complex scale composing of CuO, Cu 2O, Cu 2Cr 2O 4 and Cr 2O 3 formed on the PM Cu 50Cr alloy. This result implies that alloy microstructure affects their oxidation behaviors largely. Microcrystalline structure provides numerous diffusion paths for reactive component chromium, shorter diffusion distance and rapid dissolution of Cr riched second phase. All these favor the exclusive formation of the most stable oxide. [ | 付广艳 牛焱 吴维 管恒荣 | 2001 | 中国有色金属学会会刊:英文版2001，11，3： | 13 |
| 2 | Cu_2ZnSnS_4 thin films prepared by sulfurization of ion beam sputtered precursor and their electrical and optical properties显示文摘Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ω·cm and a high absorption coefficient as 1×104 cm-1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber. | ZHANG Jun SHAO Lexi FU Yujun XIE Erqing | 2006 | Rare Metals2006，25，z1： | 11 |
| 3 | Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering显示文摘The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C. | Min Su KANG Tie-gang WANG Jung Ho SHIN Roman NOWAK Kwang Ho KIM | 2012 | 中国有色金属学会会刊:英文版2012，22，S3： | 11 |
| 4 | Mechanical,Microstructural and Tribological Properties of Reactive Magnetron Sputtered Cr-Mo-N Films显示文摘The Cr-Mo-N films were deposited on high speed steel(HSS) substrates by a DC reactive magnetron sputtering equipment coupled with two horizontal magnetron sources.The effects of substrate negative bias voltage(V_b),substrate temperature(T_s) and gas flow ratio(R= N_2/(N_2 + Ar)) on the microstructure,morphology,as well as the mechanical and tribological properties of the Cr-Mo-N films were investigated by virtue of X-ray diffraction(XRD) analysis,X-ray photoelectron spectroscopy(XPS),field emission scanning electron microscopy(FESEM),atomic force microscopy(AFM),nano-indentation test,ball-on-disk tribometer,and Rockwell indenter et al.With increasing V_b to-100 V,the preferred orientation of the films changed from(111) to(200) and their mechanical and tribological properties were improved gradually,too.It was also found that T_s gave a significant effect on mechanical property enhancement.When the T_s reached 300 ℃,the film obtained the highest hardness and effective elastic modulus of approximately 30.1 and 420.5 GPa,respectively and its critical load increased to about 54 N.With increasing R,the phase transformation from body-centered-cubic(bcc) Cr and hexagonal CrMoN_x multiphase to single face-centered-cubic(fcc) solid solution phase was observed.The correlations between values of hardness(H),effective elastic modulus(E~*),HIE~*,H^3/E^(*2),elastic recovery(1/14) and tribological properties of the films were also investigated.The results showed that the elastic recovery played an important role in the tribological behavior. | Dongli Qi Hao Lei Tiegang Wang Zhiliang Pei Jun Gong Chao Sun | 2015 | Journal of Materials Science & Technology2015，31，1： | 10 |
| 5 | A comparison of transmittance properties between ZnO∶Al films for transparent conductors for solar cells deposited by sputtering of AZO and cosputtering of AZO/ZnO显示文摘Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results. | LEE Chongmu YIM Keunbin CHO Youngjoon Lee J.G. | 2006 | Rare Metals2006，25，z1： | 8 |
| 6 | Influence of temperature on the microstructure of V_2O_5 film prepared by DC magnetron sputtering显示文摘V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries. | SU Qing PAN Xiaojun XIE Erqing WANG Yinyue QIU Jiawen LIU Xueqin | 2006 | Rare Metals2006，25，z1： | 6 |
| 7 | Cu_2ZnSnS_4 thin films prepared by sulfurizing different multilayer metal precursors显示文摘Cu2ZnSnS4 (CZTS) thin films were successfully fabricated on glass substrates by sulfurizing Cu-Sn-Zn multilayer precursors, which were deposited by ion beam sputtering and RF magnetron sputtering, respectively. The structural, electrical and optical properties of the prepared films under various processing conditions were investigated in detail. Results showed that the as-deposited CZTS thin films with the precursors by both ion beam sputtering and RF magnetron sputtering have a composition near stoichiometric. The crystallization of the samples, however, has a strong dependence on the atomic percent of constituents of the prepared CZTS films. A single phase stannite-type structure CZTS with a large absorption coefficient of 104/cm in the visible range could be obtained after sulfurization at 520℃ for 2 h. The samples relative to the RF magnetron sputtering showed a low resistivity of 0.073 ?cm and band gap energy of about 1.53 eV. The samples relative to the ion beam sputtering exhibited a resistivity of 0.36 Ωcm and the band gap energy is about 1.51 eV. | ZHANG Jun & SHAO LeXi School of Physical Science and Technology, Zhanjiang Normal University, Zhanjiang 524048, China | 2009 | Science China(Technological Sciences)2009，52，1： | 5 |
| 8 | Preparation and properties of AZO thin films on different substrates | Hong-lie SHEN,Hui ZHANG,Lin-feng LU,Feng JIANG,Chao YANG College of Materials Science and Engineering, Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China | 2010 | Progress in Natural Science:Materials International2010，20，1： | 4 |
| 9 | EFFECT OF Ar PRESSURE ON STRUCTURAL AND ELECTRICAL PROPERTIES OF Cu FILMS DEPOSITED ON GLASS BY DC MAGNETRON SPUTTERING显示文摘Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the targetcurrent increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observethe structural characterization of the films. The resistivity of the films was measuredusing four-point probe technique. At all the Ar pressures, the Cu films have mixturecrystalline orientations of [111], [200] and [220] in the direction of the film growth.The film deposited at lower pressure shows more [111] orientation while that depositedat higher pressure has more [220] orientation. The amount of larger grains in the filmprepared at 0.5Pa Ar pressure is slightly less than that prepared at 1. 0Pa and 1.5PaAr pressures. The resistivities of the films prepared at three different Ar pressures rep-resent few differences, about 3-4 times of that of bulk material. Besides the depositionrate increases with Ar pressure because of the increase in target current. The contri-bution of the bombardment of energetic reflected Argon atoms to these phenomena isdiscussed. | P. Wu F.P. Wang L.Q. Pan Y. Tian H. Qiu | 2002 | Acta Metallurgica Sinica(English Letters)2002，15，1： | 4 |
| 10 | Preparation and characteristics of indium tin oxide (ITO) thin films at low temperature by r.f. magnetron sputtering显示文摘Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4 Ω·cm at 80 ℃, 80 W after annealing. | REN Bingyan LIU Xiaoping WANG Minhua XU Ying | 2006 | Rare Metals2006，25，z1： | 4 |
| 11 | Solid solution or amorphous phase formation in TiZr-based ternary to quinternary multi-principal-element films显示文摘TiZr-based multicomponent metallic films composed of 3–5 constituents with almost equal atomic concentrations were prepared by cosputtering of pure metallic targets in an Ar atmosphere.X-ray diffraction was employed to determine phase composition,crystalline structure,lattice parameters,texture and crystallite size of the deposited films.The deposited films exhibited only solid solution(fcc,bcc or hcp) or amorphous phases,no intermetallic components being detected.It was found that the hcp structure was stabilized by the presence of Hf or Y,bcc by Nb or Al and fcc by Cu.For the investigated films,the atomic size difference,mixing enthalpy,mixing entropy,Gibbs free energy of mixing and the electronegativity difference for solid solution and amorphous phases were calculated based on Miedema's approach of the regular solution model.It was shown that the atomic size difference and the ratio between the Gibbs free energies of mixing of the solid solution and amorphous phases were the most significant parameters controlling the film crystallinity. | Mariana Braic Viorel Braic Alina Vladescu Catalin N.Zoita Mihai Balaceanu | 2014 | Progress in Natural Science:Materials International2014，24，4： | 4 |
| 12 | Preparation of InSb nanocrystals embedded in SiO_2 thin films显示文摘InSb nanocrystals embedded in SiO 2 thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO-2 matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t 1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films. | ZHU Kaigui 1, SHI Jianzhong 1, WEI Yanfeng 2 and ZHANG Lide 1 1. Institute of Solid State Physics, Chinese Academy of Science, Hefei 230031, China 2. State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China | 1998 | Chinese Science Bulletin1998，43，19： | 4 |
| 13 | A mechanism for enhanced photocatalytic activity of nano-size silver particle modified titanium dioxide thin films显示文摘Ag-TiO2 nanostructured thin films with silver volume fraction of 0–20% were deposited on silicon and quartz substrates by RF magnetron sputtering and annealed in ambient air at 950°C for 1 h. The phase structure and surface topography of the films were characterized by X-ray diffractometer and transmission electron microscope. Photocatalytic activity of the films was evaluated by light induced degradation of methyl orange (C14H14N3NaO3S) solution using a high pressure mercury lamp as lamp-house. The relation of photocatalytic activity and silver content was studied in detail. It was found that silver content influences phase structure of TiO2 thin films, and silver in the films is metallic Ag (Ag0). With increasing silver content from 0 to 20 vol%, photocatalytic activity of the films increases first and then decreases. A suitable amount (2.5–5 vol%) silver addition can significantly enhance the photocatalytic activity of TiO2 films. The enhanced photocatalytic activity was mainly attributed to the extension of visible light absorption region of the films, the presence of anatase phase, the increase of oxy-gen anion radicals O2? and reactive center of surface Ti3+, and the better separation between electrons and holes on the films surface. | MENG FanMing1,2,3*, LU Fei1,3, SUN ZhaoQi1,3 & Lü JianGuo1,2,4 1 School of Physics and Materials Science, Anhui University, Hefei 230039, China 2 Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China 3 Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, China 4 Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, China | 2010 | Science China(Technological Sciences)2010，53，11： | 4 |
| 14 | Optical characterization of ZnO thin films deposited by RF magnetron sputtering method显示文摘This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained. | TANG Ning WANG JinLiang XU HengXing PENG HongYong FAN Chao | 2009 | Science China(Technological Sciences)2009，52，8： | 3 |
| 15 | Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications显示文摘In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS. | WANG Li,SUN HongFang,ZHOU HuiHua & ZHU Jing Beijing National Center for Electron Microscopy Laboratory,Department of Materials Science and Engineering,Tsinghua University,Beijing 100084,China | 2010 | Science China(Technological Sciences)2010，53，9： | 3 |
| 16 | Mn–Co–Ni–O thin films prepared by sputtering with alloy target显示文摘The thin film of heat-sensitive materials has been widely concerned with the current trend of miniaturization and integration of sensors.In this work,Mn1.56 Co0.96 Ni0.48 O4(MCNO)thin films were prepared on Si O2/Si substrates by sputtering with Mn–Co–Ni alloy target and then annealing in air at different temperatures(650–900℃).The X-ray diffraction(XRD)and field emission scanning electron microscopy(FE-SEM)analysis indicated that the main crystalline phase of MCNO thin films was spinel crystal structure;the surface of the thin films was very dense and uniform.The electrical properties of the thin films were studied in the temperature range of–5–50℃.The MCNO thin film with a low room temperature resistance R25 of 71.1 kΩand a high thermosensitive constant B value of 3305 K was obtained at 750℃.X-ray photoelectron spectroscopy(XPS)analysis showed that the concentration of Mn3+and Mn4+cations in MCNO thin films is the highest when annealing temperature is 750℃.The complex impedance analysis revealed internal conduction mechanism of the MCNO thin film and the resistance of the thin film was dominated by grain boundary resistance. | Ruifeng LI Qiuyun FU Xiaohua ZOU Zhiping ZHENG Wei LUO Liang YAN | 2020 | Journal of Advanced Ceramics2020，9，1： | 3 |
| 17 | Enhance of TiO_2 dopants incorporated reduced graphene oxide via RF magnetron sputtering for efficient dye-sensitised solar cells显示文摘In particular, the dye-sensitised solar cells(DSSCs) have a high potential in the rational energy conversion efficiency to secure our sustainable energy source.In the present study, advanced radio frequency(RF) magnetron sputtering technique was applied to incorporate titanium dioxide(TiO_2) dopants into reduced graphene oxide(rGO) nanosheet for improving the power conversion efficiency(PCE) of DSSCs device. An optimum TiO_2 content incorporated onto rGO nanosheet plays an important role in improving the PCE of DSSCs by minimising the recombination losses of photo-induced charge carriers.Based on the results obtained, 40-s sputtering duration for incorporating TiO_2 dopants onto rGO nanosheet exhibits a maximum PCE of 8.78% than that of pure rGO film(0.68%). In fact, the presence of optimum content of TiO_2 dopants within rGO nanosheet could act as mediators for efficient separation photo-induced charge carriers. However, the excessive of sputtering duration(e.g. 60 s) of TiO_2 dopants onto rGO nanosheet results higher charge recombination and lowers the PCE of DSSCs(5.39%). | Foo Wah Low Chin Wei Lai Kian Mun Lee Joon Ching Juan | 2018 | Rare Metals2018，37，11： | 3 |
| 18 | Influence of substrate temperature on growth of a-Si:H films by reactive facing target sputtering deposition显示文摘Hydrogenated amorphous silicon(a-Si:H) films were deposited by reactive facing target sputtering(FTS) technique with a mixture of Ar and H2 reaction gas.Fourier transform infrared(FTIR) absorption,Raman scattering and ultraviolet-visible optical absorption are used to investigate the microstructure and optical properties of the deposited films.The decrease of the concentration of bonded hydrogen,especially that of(Si-H2)n with increasing substrate temperature(Ts),was observed in FTIR spectra,suggesting the atomic density increases and the concentration of microvoids decrease in a-Si:H films.The increase of both the short range order and the intermediate range order of amorphous network for a-Si:H films were verified by Raman scattering spectra,in which increasing Ts decreasing the band width of TO and the scattering intensity ratio ITA/ITO were obtained.All above results clarify the effect of increasing Ts on the microstructure amelioration for a-Si:H films.The reduction of disordered domains is correlated with the film growing process,where the increased surface diffusion mobility and etching of weak bonds is induced by increasing Ts.Furthermore,analysis of optical absorption indicates that the films with a lower optical band gap and a narrower band edge can be obtained by this FTS technique. | YU Wei,MENG LingHai,YUAN Jing,LU HaiJiang,WU ShuJie & FU GuangSheng College of Physics Science and Technology,Hebei University,Baoding 071002,China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，5： | 3 |
| 19 | Magnetostrictive properties and detection efficiency of TbDyFe/FeCo composite materials for nondestructive testing显示文摘In order to develop a highly sensitive material for nondestructive testing(NDT),(Tb_(0.3) Dy_(0.7))Fe_(1.95) thin films were deposited on FeCo substrates at room temperature by magnetron sputtering and annealed.The magnetostrictive properties and the detection efficiency of the composite films were investigated.Results demonstrate that the detection efficiency roughly shows regular consistency with the magnetostrictive strain of the TbDyFe films. Heat treatment has a great effect on the crystalline state and the magnetostrictive strain of the composite materials. The as-deposited(Tb_(0.3) Dy_(0.7))Fe_(1.95) films are amorphous, and the saturation magnetostriction(ls) is only 90 ppm. However, the nanostructured crystalline REFe2 is partially separated out in amorphous matrix after annealing at 600C for 1 h, and the ls increases to 265 ppm. Simultaneously, the detection efficiency of the composite materials is obviously improved compared to that of the as-deposited films. The detection signal of traditional FeCo strip is0.4 V at the excitation power of 1.0 P and frequency of 128 kHz and that of the strip increases significantly by depositing one layer of(Tb_(0.3) Dy_(0.7))Fe_(1.95) film. The detection signal of the composite material annealed at 600C is the best, even reaching saturation value of 2.5 V(1.0 P, 128 kHz). The results may provide us with a method for preparing new materials for NDT. | Liangliang Zhu Kuoshe Li Yang Luo Dunbo Yu Zilong Wang Guiyong Wu Jiajun Xie Zhifeng Tang | 2019 | Journal of Rare Earths2019，37，2： | 3 |
| 20 | Nanoscale Ta-based diffusion barrier thin-films and their resistance properties显示文摘Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp. The resistance properties, structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement, AFM, SEM-EDS, Alpha-Step IQ Profilers and XRD. The experimental results showed that agglomeration, oxidation and stabilization effects are concurrent. And resistance increasing and decreasing are coexistent after RTA. The formation of high resistance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA. | ZHOU JiCheng CHEN HaiBo LI YouZhen | 2008 | Science China(Technological Sciences)2008，51，7： | 3 |
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