Mn–Co–Ni–O thin films prepared by sputtering with alloy target

查看全文 作　　者：Ruifeng [1]LI;Qiuyun [1]FU;Xiaohua [1]ZOU;Zhiping [1]ZHENG;Wei [1]LUO;Liang [1]YAN

机构地区：[1]Engineering Research Center for Functional Ceramics of Ministry of Education,School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Journal of Advanced Ceramics》索引2020年第9卷第1期,共8页

基　　金：supported by National Key R&D Program of China(Grant No.2017YFB0406405);National Natural Science Foundation of China(Grant No.61571203)。 摘　　要：The thin film of heat-sensitive materials has been widely concerned with the current trend of miniaturization and integration of sensors.In this work,Mn1.56 Co0.96 Ni0.48 O4(MCNO)thin films were prepared on Si O2/Si substrates by sputtering with Mn–Co–Ni alloy target and then annealing in air at different temperatures(650–900℃).The X-ray diffraction(XRD)and field emission scanning electron microscopy(FE-SEM)analysis indicated that the main crystalline phase of MCNO thin films was spinel crystal structure;the surface of the thin films was very dense and uniform.The electrical properties of the thin films were studied in the temperature range of–5–50℃.The MCNO thin film with a low room temperature resistance R25 of 71.1 kΩand a high thermosensitive constant B value of 3305 K was obtained at 750℃.X-ray photoelectron spectroscopy(XPS)analysis showed that the concentration of Mn3+and Mn4+cations in MCNO thin films is the highest when annealing temperature is 750℃.The complex impedance analysis revealed internal conduction mechanism of the MCNO thin film and the resistance of the thin film was dominated by grain boundary resistance. 关键词：MCNO thin film SPUTTERING ANNEALING

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Mn–Co–Ni–O thin films prepared by sputtering with alloy target

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