Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer

查看全文 作　　者：Junchi [1]Liu;Xiao [1]Liu;Zhuojun [1]Chen;Lili [1]Miao;Xingqiang [1]Liu;Bo [2]Li;Liming [1]Tang;Keqiu [1]Chen;Yuan [1]Liu;Jingbo [3]Li;Zhongming [3]Wei;Xidong [4]Duan

机构地区：[1]Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China;[2]Hunan Key Laboratory of two dimensional materials, Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China;[3]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;[4]Hunan Key Laboratory of two dimensional materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China

出　　处：《Nano Research》索引2019年第12卷第2期,共6页

基　　金：the National Natural Science Foundation of China (Nos. 61804050, 51872086, 61622406, 11674310, and 61571415);the Double First-Class Initiative of Hunan University (No. 531109100004);the Fundamental Research Funds of the Central Universities (Nos. 531107051078 and 531107051055). 摘　　要：Doping, which is the intentional introducti on of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we prese nt high-quality two-dime nsional SnS2 nano sheets with well-controlled Sb dopi ng concen tration via direct vapor growth approach and following micromechanical cleavage process. X-ray photoelectro n spectroscopy (XPS) measureme nt dem on strates that Sb contents of the doped samples are approximately 0.22%, 0.34% and 1.21%, respectively, and doping in duces the upward shift of the Fermi level with respect to the pristi ne SnS2. Tran smissio n electro n microscopy (TEM) characterizatio n exhibits that Sb-doped SnS2 nano sheets have a high-quality hexagonal symmetry structure and Sb element is uniformly distributed in the nano sheets. The phototra nsistors based on the Sb-doped SnS2 mono layers show n-type behavior with high mobility which is one order of magn itude higher than that of pristi ne SnS2 phototra nsistors. The photorespo nsivity and exter nal quantum efficiency (EQE) of Sb-S nS2 mono layers phototra nsistors are approximately three orders of magnitude higher than that of pristine SnS2 phototransistor. The results suggest that the method of reducing Shottky barrier width to achieve high mobility and photoresp on sivity is effective, and Sb-doped SnS2 mono layer has significant potential in future nanoelectronic and optoelectronic applications. 关键词：two-dimensional doping SCHOTTKY BARRIER WIDTH SnS2 OPTOELECTRONICS

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Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer

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