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| 1 | Emerging in-plane anisotropic two-dimensional materials显示文摘Black phosphorus(BP)is a rapidly up and coming star in two-dimensional(2D)materials.The unique characteristic of BP is its in-plane anisotropy.This characteristic of BP ignites a new type of 2D materials that have low-symmetry structures and in-plane anisotropic properties.On this basis,they offer richer and more unique low-dimensional physics compared to isotropic 2D materials,thus providing a fertile ground for novel applications including electronics,optoelectronics,molecular detection,thermoelectric,piezoelectric,and ferroelectric with respect to in-plane anisotropy.This article reviews the recent advance in characterization and applications of in-plane anisotropic 2D materials. | Liang Li Wei Han Lejing Pi Ping Niu Junbo Han Chengliang Wang Bin Su Huiqiao Li Jie Xiong Yoshio Bando Tianyou Zhai | 2019 | InfoMat2019，1，1： | 16 |
| 2 | 二维材料最新研究进展显示文摘Research on two-dimensional(2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief backgroundintroduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials(PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field. | 常诚 陈伟 陈也 陈永华 陈雨 丁峰 樊春海 范红金 范战西 龚成 宫勇吉 何其远 洪勋 胡晟 胡伟达 黄维 黄元 季威 李德慧 李连忠 李强 林立 凌崇益 刘鸣华 刘楠 刘庄 Kian Ping Loh 马建民 缪峰 彭海琳 邵明飞 宋礼 苏邵 孙硕 谭超良 唐智勇 王定胜 王欢 王金兰 王欣 王欣然 Andrew T.S.Wee 魏钟鸣 吴宇恩 吴忠帅 熊杰 熊启华 徐伟高 尹鹏 曾海波 曾志远 翟天佑 张晗 张辉 张其春 张铁锐 张翔 赵立东 赵美廷 赵伟杰 赵运宣 周凯歌 周兴 周喻 朱宏伟 张华 刘忠范 | 2021 | 物理化学学报2021，37，12： | 9 |
| 3 | Wearable skin-like optoelectronic systems with suppression of motion artifacts for cuff-less continuous blood pressure monitor显示文摘According to the statistics of the World Health Organization,an estimated 17.9 million people die from cardiovascular diseases each year,representing 31%of all global deaths.Continuous non-invasive arterial pressure(CNAP)is essential for the management of cardiovascular diseases.However,it is difficult to achieve long-term CNAP monitoring with the daily use of current devices due to irritation of the skin as well as the lack of motion artifacts suppression.Here,we report a high-performance skin-like optoelectronic system integrated with ultra-thin flexible circuits to monitor CNAP.We introduce a theoretical model via the virtual work principle for predicting the precise blood pressure and suppressing motion artifacts,and propose optical difference in the frequency domain for stable optical measurements in terms of skin-like devices.We compare the results with the blood pressure acquired by invasive(intra-arterial)blood pressure monitoring for>1500 min in total on 44 subjects in an intensive care unit.The maximum absolute errors of diastolic and systolic blood pressure were±7/±10 mm Hg,respectively,in immobilized,and±10/±14 mm Hg,respectively,in walking scenarios.These strategies provide advanced blood pressure monitoring techniques,which would directly address an unmet clinical need or daily use for a highly vulnerable population. | Haicheng Li Yinji Ma Ziwei Liang Zhouheng Wang Yu Cao Yuan Xu Hua Zhou Bingwei Lu Ying Chen Zhiyuan Han Shisheng Cai Xue Feng | 2020 | National Science Review2020，7，5： | 7 |
| 4 | Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer显示文摘Doping, which is the intentional introducti on of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we prese nt high-quality two-dime nsional SnS2 nano sheets with well-controlled Sb dopi ng concen tration via direct vapor growth approach and following micromechanical cleavage process. X-ray photoelectro n spectroscopy (XPS) measureme nt dem on strates that Sb contents of the doped samples are approximately 0.22%, 0.34% and 1.21%, respectively, and doping in duces the upward shift of the Fermi level with respect to the pristi ne SnS2. Tran smissio n electro n microscopy (TEM) characterizatio n exhibits that Sb-doped SnS2 nano sheets have a high-quality hexagonal symmetry structure and Sb element is uniformly distributed in the nano sheets. The phototra nsistors based on the Sb-doped SnS2 mono layers show n-type behavior with high mobility which is one order of magn itude higher than that of pristi ne SnS2 phototra nsistors. The photorespo nsivity and exter nal quantum efficiency (EQE) of Sb-S nS2 mono layers phototra nsistors are approximately three orders of magnitude higher than that of pristine SnS2 phototransistor. The results suggest that the method of reducing Shottky barrier width to achieve high mobility and photoresp on sivity is effective, and Sb-doped SnS2 mono layer has significant potential in future nanoelectronic and optoelectronic applications. | Junchi Liu Xiao Liu Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Liming Tang Keqiu Chen Yuan Liu Jingbo Li Zhongming Wei Xidong Duan | 2019 | Nano Research2019，12，2： | 7 |
| 5 | Emission properties of nanolasers during the transition to lasing显示文摘This review addresses ongoing discussions involving nanolaser experiments,particularly those related to thresholdless lasing or few-emitter devices.A quantum-optical(quantum-mechanical active medium and radiation field)theory is used to examine the emission properties of nanolasers under different experimental configurations.The active medium is treated as inhomogeneously broadened semiconductor quantum dots embedded in a quantum well,where carriers are introduced via current injection.Comparisons are made between a conventional laser and a nanolaser with a spontaneous emission factor of unity,as well as a laser with only a few quantum dots providing the gain.It is found that the combined exploration of intensity,coherence time,photon autocorrelation function and carrier spectral hole burning can provide a unique and consistent picture of nanolasers in the new regimes of laser operation during the transition from thermal to coherent emission.Furthermore,by reducing the number of quantum dots in the optical cavity,a clear indication of non-classical photon statistics is observed before the single-quantum-dot limit is reached. | Weng W Chow Frank Jahnke Christopher Gies | 2014 | Light(Science & Applications)2014，3，1： | 5 |
| 6 | High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure显示文摘Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties. Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on S1O2/S1 substrate, the thick ness of Sb nan osheet on WSe2 can be reduced effectively to mono layer. We con struct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures. Electrical transport measurements indicate that the photodiode show obvious rectifying effect. Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW. The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics. | Xiao Liu Guangzhuang Sun Peng Chen Junchi Liu Zhengwei Zhang Jia Li Huifang Ma Bei Zhao Ruixia Wu Weiqi Dang Xiangdong Yang Chen Dai Xuwan Tang Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Yuan Liu Xidong Duan | 2019 | Nano Research2019，12，2： | 5 |
| 7 | Optoelectronics based on 2D TMDs and heterostructures显示文摘2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications.We reviewed the growth,characterization and optoelectronics based on 2D TMDs and their heterostructures,and demonstrated their unique and high quality of performances.For example,we observed the large mobility,fast response and high photo-responsivity in Mo S_2,WS_2 and WSe_2phototransistors,as well as the novel performances in vd W heterostructures such as the strong interlayer coupling,am-bipolar and rectifying behaviour,and the obvious photovoltaic effect.It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics,more even than traditional semiconductors such as silicon. | Nengjie Huo Yujue Yang Jingbo Li | 2017 | Journal of Semiconductors2017，38，3： | 4 |
| 8 | Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications显示文摘Large-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices.The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries;however,currently presented as a significant challenge.Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions,controllable and uniform thicknesses,large crystal domains and minimum defects.In this review,recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined.Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised,and advantages and disadvantages of each approach considering ease of the synthesis,defects,grain sizes and uniformity are discussed. | Ali Zavabeti Azmira Jannat Li Zhong Azhar Ali Haidry Zhengjun Yao Jian Zhen Ou | 2020 | Nano-Micro Letters2020，12，5： | 4 |
| 9 | Electronic warfare in the optical band:Main features,examples and selected measurement data显示文摘The paper presents the possibilities of,and methods for,acquiring,analysing and processing optical signals in order to recognise,identify and counteract threats on the contemporary battleground.The main ways electronic warfare is waged in the optical band of the electromagnetic wave spectrum have been formulated,including the acquisition of optical emitter signatures,as well as ultraviolet(UV)and thermal(IR)signatures.The physical parameters and values describing the emission of laser radiation are discussed,including their importance in terms of creating optical signatures.Moreover,it has been shown that in the transformation of optical signals into signatures,only their spectral and temporal parameters can be applied.This was confirmed in experimental part of the paper,which includes our own measurements of spectral and temporal emission characteristics for three types of binocular laser rangefinders.It has been further shown that through simple registration and quick analysis involving comparison of emission time parameters in the case of UV signatures in“solar-blind”band,various events can be identified quickly and faultlessly.The same is true for IR signatures,where the amplitudes of the recorded signal for several wavelengths are compared.This was confirmed experimentally for UV signatures by registering and then analyzing signals from several events during military exercises at a training ground,namely Rocket Propelled Grenade(RPG)launches and explosions after hitting targets,trinitrotoluene(TNT)explosions,firing armour-piercing,fin-stabilised,discarding sabots(APFSDS)or high explosive(HE)projectiles.The final section describes a proposed model database of emitters,created as a result of analysing and transforming the recorded signals into optical signatures. | Roman Ostrowski Artur Cywinski Marek Strzelec | 2021 | Defence Technology(防务技术)2021，17，5： | 3 |
| 10 | 原位化学氧化构建高性能MoS2-MoO3面内同质异质结光敏晶体管显示文摘由组成相同的材料构建具有清晰边界的平面内p-n异质结是二维晶体管研究面临的主要挑战之一,在下一代集成电路和光电器件领域具有重要的潜在应用.因此有必要开发一种可实现p-n界面的简便、可控的操作方法.硫化钼(MoS2)作为一种具有原子层厚度的n型半导体材料已经在电子学和光电子学领域展现出巨大的应用前景.在本研究中,我们通过KI/I2溶液化学氧化诱导方法实现了从n型MoS2到p型MoO3的原位转化,进而形成了横向面内p-n异质结.MoS2/MoO3 p-n异质结显示出高效的光响应和整流特征,0 V、~3.6 mA W-1条件下最大外部量子产率达到~650%,同时光开关比达到~102.构筑的p-n异质结的高性能也被光电流面扫描所证实.由于器件在低源漏电压(VDS)和栅压(VG)条件下具有高的光响应性能,MoS2/MoO3 p-n二极管在光电器件及集成电路中的应用具有低功耗的特点.本研究为局部进行载流子种类转变提供了可能的途径,并将MoS2进一步应用于电子学、光电子学及CMOS逻辑电路领域. | 毕开西 万强 舒志文 邵功磊 靳媛媛 朱梦剑 林均 刘华伟 刘怀志 陈艺勤 刘松 段辉高 | 2020 | Science China Materials2020，63，6： | 3 |
| 11 | Diamond semiconductor and elastic strain engineering显示文摘Diamond,as an ultra-wide bandgap semiconductor,has become a promising candidate for next-generation microelec-tronics and optoelectronics due to its numerous advantages over conventional semiconductors,including ultrahigh carrier mo-bility and thermal conductivity,low thermal expansion coefficient,and ultra-high breakdown voltage,etc.Despite these ex-traordinary properties,diamond also faces various challenges before being practically used in the semiconductor industry.This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes,high-power/high-frequency field-effect transistors,MEMS/NEMS,and devices operating at high temperatures.Following that,we will discuss recent developments to address scalable diamond device applications,emphasizing the synthesis of large-area,high-quality CVD diamond films and difficulties in diamond doping.Lastly,we show potential solutions to modulate diamond’s electronic properties by the“elastic strain engineering”strategy,which sheds light on the future development of diamond-based electronics,photonics and quantum systems. | Chaoqun Dang Anliang Lu Heyi Wang Hongti Zhang Yang Lu | 2022 | Journal of Semiconductors2022，43，2： | 2 |
| 12 | Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites显示文摘Two-dimensional(2 D) hybrid organic-inorganic perovskites have recently attracted attention due to their layered nature, naturally formed quantum well structure, large exciton binding energy and especially better long-term environmental stability compared with their three-dimensional(3 D) counterparts. In this report, we present a brief overview of the recent progress of the optoelectronic applications in 2 D perovskites. The layer number dependent physical properties of 2 D perovskites will first be introduced and then the different synthetic approaches to achieve 2 D perovskites with different morphologies will be discussed. The optical, optoelectronic properties and self-trapped states in 2 D perovskites will be described, which are indispensable for designing the new device structures with novel functionalities and improving the device performance. Subsequently, a brief summary of the advantages and the current research status of the 2 D perovskite-based heterostructures will be illustrated.Finally, a perspective of 2 D perovskite materials is given toward their material synthesis and novel device applications. | Haizhen Wang Chen Fang Hongmei Luo Dehui Li | 2019 | Journal of Semiconductors2019，40，4： | 2 |
| 13 | Deep-ultraviolet integrated photonic and optoelectronic devices:A prospect of the hybridization of group Ⅲ–nitrides, Ⅲ–oxides,and two-dimensional materials显示文摘Progress in the design and fabrication of ultraviolet and deep-ultraviolet groupⅢ–nitride optoelectronic devices,based on aluminum gallium nitride and boron nitride and their alloys,and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed.We emphasize wide-bandgap nitride compound semiconductors(i.e.,(B,Al,Ga)N)as the deep-ultraviolet materials of interest,and two-dimensional materials,namely graphene,two-dimensional boron nitride,and two-dimensional transition metal dichalcogenides,along with gallium oxide,as the hybrid integrated materials.We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices.In this article we provide an overview of aluminum nitride,sapphire,and gallium oxide as platforms for deep-ultraviolet optoelectronic devices,in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates.A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided. | Nasir Alfaraj Jung-Wook Min Chun Hong Kang Abdullah A.Alatawi Davide Priante Ram Chandra Subedi Malleswararao Tangi Tien Khee Ng Boon S.Ooi | 2019 | Journal of Semiconductors2019，40，12： | 2 |
| 14 | AlGaN nanocrystals:building blocks for efficient ultraviolet optoelectronics显示文摘AlGaN nanocrystals have emerged as the building blocks of future optoelectronic devices operating in the ultraviolet(UV) spectral range. In this article, we describe the design and performance characteristics of AlGaN nanocrystal UV light-emitting diodes(LEDs) and surface-emitting UV laser diodes. The selective-area epitaxy and structural, optical, and electrical properties of AlGaN nanocrystals are presented. The recent experimental demonstrations of AlGaN nanocrystal LEDs and laser diodes are also discussed. | XIANHE LIU KISHWAR MASHOOQ DAVID A.LALEYAN ERIC T.REID ZETIAN MI | 2019 | Photonics Research2019，7，6： | 2 |
| 15 | Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling显示文摘Measured and calculated results are presented for the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime.The structures are based on high-finesse GaAs/AlAs micropillar cavities,each with an active medium consisting of a layer of InGaAs quantum dots(QDs)and the distinguishing feature of having a substantial fraction of spontaneous emission channeled into one cavity mode(highβ-factor).This paper demonstrates that the usual criterion for lasing with a conventional(lowβ-factor)cavity,that is,a sharp non-linearity in the input–output curve accompanied by noticeable linewidth narrowing,has to be reinforced by the equal-time second-order photon autocorrelation function to confirm lasing.The paper also shows that the equal-time second-order photon autocorrelation function is useful for recognizing superradiance,a manifestation of the correlations possible in high-βmicrocavities operating with QDs.In terms of consolidating the collected data and identifying the physics underlying laser action,both theory and experiment suggest a sole dependence on intracavity photon number.Evidence for this assertion comes from all our measured and calculated data on emission coherence and fluctuation,for devices ranging from light-emitting diodes(LEDs)and cavity-enhanced LEDs to lasers,lying on the same two curves:one for linewidth narrowing versus intracavity photon number and the other for g(2)(0)versus intracavity photon number. | Sören Kreinberg Weng W Chow Janik Wolters Christian Schneider Christopher Gies Frank Jahnke Sven Höfling Martin Kamp Stephan Reitzenstein 无 | 2017 | Light(Science & Applications)2017，6，1： | 2 |
| 16 | Integrated optical switch matrices for packet data networks显示文摘Integrated circuit technologies are enabling intelligent,chip-based,optical packet switch matrices.Rapid real-time reconfigurability at the photonic layer using integrated circuit technologies is expected to enable cost-effective,energy-efficient,and transparent data communications.InP integrated photonic circuits offer high-performance amplifiers,switches,modulators,detectors,and de/multiplexers in the same wafer-scale processes.The complexity of these circuits has been transformed as the process technologies have matured,enabling component counts to increase to many hundreds per chip.Active–passive monolithic integration has enabled switching matrices with up to 480 components,connecting 16 inputs to 16 outputs.Integrated switching matrices route data streams of hundreds of gigabits per second.Multi-path and packet time-scale switching have been demonstrated in the laboratory to route between multiple fibre connections.Wavelength-granularity routing and monitoring is realised inside the chip.In this paper,we review the current status in InP integrated photonics for optical switch matrices,paying particular attention to the additional on-chip functions that become feasible with active component integration.We highlight the opportunities for introducing intelligence at the physical layer and explore the requirements and opportunities for cost-effective,scalable switching. | Ripalta Stabile Aaron Albores-Mejia Abhinav Rohit Kevin A.Williams | 2016 | Microsystems & Nanoengineering2016，2，1： | 2 |
| 17 | Optoelectronic sensing of biophysical and biochemical signals based on photon recycling of a micro-LED显示文摘Conventional bioelectrical sensors and systems integrate multiple power harvesting,signal amplification and data transmission components for wireless biological signal detection.This paper reports the real-time biophysical and biochemical activities can be optically captured using a microscale light-emitting diode(micro-LED),eliminating the need for complicated sensing circuit.Such a thin-film diode based device simultaneously absorbs and emits photons,enabling wireless power harvesting and signal transmission.Additionally,owing to its strong photon-recycling effects,the micro-LED^photoluminescence(PL)emission exhibits a superlinear dependence on the external conductance.Taking advantage of these unique mechanisms,instantaneous biophysical signals including galvanic skin response,pressure and temperature,and biochemical signals like ascorbic acid concentration,can be optically monitored,and it demonstrates that such an optoelectronic sensing technique outperforms a traditional tethered,electrically based sensing circuit,in terms of its footprint,accuracy and sensitivity.This presented optoelectronic sensing approach could establish promising routes to advanced biological sensors. | He Ding Guoqing Lv Zhao Shi Dali Cheng Yang Xie Yunxiang Huang Lan Yin Jian Yang Yongtian Wang Xing Sheng | 2021 | Nano Research2021，14，9： | 2 |
| 18 | 硅太阳能电池供能的有机电化学晶体管光电子器件显示文摘越来越多的研究将有机电化学晶体管(OECT)用于新颖的电学设备,然而这些设备天然需要两个仪器电源,不利于将其应用于对能源供应有严格要求的便携和可穿戴体系.本文通过将单晶硅太阳能电池组装到OECT的回路中并以光作为燃料,构建了自供能和光调控功能的有机光电化学晶体管(OPECT)光电子器件.以基于聚(3,4-乙烯二氧噻吩)-聚(苯乙烯磺酸酯)(PEDOT:PSS)的耗尽型和增强型OECT为例,我们设计了不同的光寻址结构并系统地研究和比较了相应的特性.通过合适的光调制,我们实现了不同的器件行为,且这些器件表现出优异的性能.在应用层面,我们设计了光逻辑电路,其不同的特性可以通过相应的辐照度来调控;此外,我们展示了光控的OECT单极逆变器,并根据系统的能源供应和阻抗进行了优化.本工作代表着新型的OPECT光电子器件,合理地将其与柔性基底和太阳能电池组装有望应用于便携和可穿戴器件领域. | 徐一童 袁骋 周冰煜 李政 胡进 林鹏 赵伟伟 陈洪渊 徐静娟 | 2023 | Science China Materials2023，66，5： | 2 |
| 19 | Effect of Zn doping on electronic structure and optical properties zincblende GaN(A DFT+U insight)显示文摘The development of new materials,having exceptional properties in comparison to existing materials is highly required for bringing advancement in electronic and optoelectronic technologies.Keeping this fact,we investigated structural,electronic,and optical properties of zincblende GaN doped with selected Zn concentrations(6.25%,12.50%,and 18.70%),using the first-principle calculations based on density functional theory with GGA+U.We conducted the entire study using the WIEN2K code.In this study,we calculated various significant parametric quantities such as cohesive energies,formation energies,bulk moduli,and lattice constants along with the study of optical and electronic properties by substituting Ga atoms with Zn atoms in 1×2×2 supercell.The structural stability is confirmed by studying the phonon dispersion curves which suggest that Zn:GaN material is stable against the 6.25%and 18.70%Zn concentrations while for 12.50%,it shows instability.The Hubbard values U=0,2,4,6 eV were added to GGA and the electronic properties were improved with the U=6 eV.Optical absorption was blue shifted while the refractive index and dielectric constant were increased with increasing the Zn concentrations.Electronic properties are enhanced due to the prime contribution of cations(Zn)3ri states.The optical and electronic properties are further discussed in detail in the entire study. | Muhammad Junaid Iqbal Khan Zarfishan Kanwal Masood Yousaf Hamid Ullah Javed Ahmad Abid Latif Yong-Han Shin Ata Ur Rahman Khalid | 2021 | Communications in Theoretical Physics2021，73，3： | 1 |
| 20 | Research progress of optoelectronic devices based on two-dimensional MoS_(2) materials显示文摘Molybdenum disulfide(MoS_(2))is a widely used optoelectronic material with exceptional electrical,magnetic,optical,and mechanical properties.Due to the quantum confinement effect,high absorption coefficient,high surface-volume ratio,and tunable bandgap,nanoMoS_(2)-based devices exhibit size-dependent and novel optoelectronic properties,such as excellent photoluminescence and high anisotropic electrical,mechanical,and thermal properties.This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional(2D)nano-MoS_(2).Various advanced devices,such as sensors,photodetectors,light-emitting diodes(LEDs),memory applications,and field-effect transistors(FETs)are considered.The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications. | Liang-Rui Zou Dan-Dan Sang Yu Yao Xue-Ting Wang Yuan-Yuan Zheng Nai-Zhou Wang Cong Wang Qing-Lin Wang | 2023 | Rare Metals2023，42，1： | 1 |
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