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| 1 | Hot-Electron Effects in InAs Nanowire Josephson Junctions显示文摘在一个电子系统精力分发定制控制打开方法到有趣的新物理和设备概念,在最近的年期间由关于金属性的 nanodevices 的研究示威了。这里,我们调查在一个 superconductor-InAs nanowire 连接联合的 Josephson 怎么能借助于热电子的注射被调节,我们证明超导的效果的完全的抑制能用象 100 pW 一样低的力量被完成。他们允许轴、光线的 heterostructures 象对做的控制一样被定义的新奇设计自由介绍的 Nanowires 提议,它能作为精确控制的 nanorefrigeratorswhere 和可预言的精力障碍在 devicessuch 的开发关键是强制的。我们的工作为未知关键热、电的参数提供估计,例如联合的电子声子,在我们的 InAs nanostructures。 | Stefano Roddaro Andrea Pescaglini Daniele Ercolani Lucia Sorba Francesco Giazotto Fabio Beltram | 2011 | Nano Research2011，4，3： | 1 |
| 2 | Role of Macrophage Targeting in the Antitumor Activity of Trabectedin显示文摘 | Giovanni Germano Roberta Frapolli Cristina Belgiovine Achille Anselmo Samantha Pesce Manuela Liguori Eugenio Erba Sarah Uboldi Massimo Zucchetti Fabio Pasqualini Manuela Nebuloni Nico van Rooijen Roberta Mortarini Luca Beltrame Sergio Marchini Ilaria Fuso | 2013 | Cancer Cell2013，，2： | 1 |
| 3 | A validated higher- performance liquid chromatography method for quantifica- tion of cinchonain I b in bark and phytopharmaceuticals of Trichilia catigua used as Catuaba显示文摘 | Beltrame FL Filho ER Fabio A | 2006 | Journal of Chroma- tography A2006，1119，1： | 1 |
| 4 | Terahertz semiconductor heterostructure laser显示文摘 | Riideger K/Shler Alessandro Tredicucci Fabio Beltram | 2002 | Na- ture2002，417，： | 1 |
| 5 | Role of Macrophage Targeting in the Antitumor Activity of Trabectedin显示文摘 | Giovanni Germano Roberta Frapolli Cristina Belgiovine Achille Anselmo Samantha Pesce Manuela Liguori Eugenio Erba Sarah Uboldi Massimo Zucchetti Fabio Pasqualini Manuela Nebuloni Nico van Rooijen Roberta Mortarini Luca Beltrame Sergio Marchini Ilaria Fuso | 2013 | Cancer Cell2013，，2： | 1 |
| 6 | Noninvasive ventilation to prevent respiratory failure after extubation in high-risk patients显示文摘 | Stefano Nava Cesare Gregoretti Francesco Fanfulla Enzo Squadrone Mario Grassi Annalisa Carlucci Fabio Beltrame Paolo Navalesi | 2005 | Critical Care Medicine2005，，11： | 1 |
| 7 | Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene显示文摘 | Sarah Goler Camilla Coletti Vincenzo Piazza Pasqualantonio Pingue Francesco Colangelo Vittorio Pellegrini Konstantin V. Emtsev Stiven Forti Ulrich Starke Fabio Beltram Stefan Heun | 2013 | Carbon2013，，： | 1 |
| 8 | Large thermal biasing of individual gated nanostructures显示文摘 | Stefano Roddaro Daniele Ercolani Mian Akif Safeen Francesco Rossella Vincenzo Piazza Francesco Giazotto Lucia Sorba Fabio Beltram | 2014 | Nano Research2014，7，4： | 1 |
| 9 | Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires显示文摘Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing.In this context,unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications.Here,we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende(WZ/ZB)crystal-phase quantum dots(QDs)realized in single InP nanowires.The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy.The electron(hole)g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature(4.2 K)with different magnetic field configurations,and rationalized by invoking the spin-correlated orbital current model.Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires. | Shiyao Wu Kai Peng Sergio Battiato Valentina Zannier Andrea Bertoni Guido Goldoni Xin Xie Jingnan Yang Shan Xiao Chenjiang Qian Feilong Song Sibai Sun Jianchen Dang Yang Yu Fabio Beltram Lucia Sorba Ang Li Bei-bei Li Francesco Rossella Xiulai Xu | 2019 | Nano Research2019，12，11： | 1 |
| 10 | Low-temperature quantum transport in CVD-grown single crystal graphene显示文摘化学蒸汽免职(CVD ) 典型地为实际应用为大规模 graphene 合成被使用。然而, CVD graphene 的劣等的电子性质是要解决的关键问题之一。因此,我们在场高质量的单个水晶的单层 graphene 的电子性质上的详细研究。graphene 经由铜上的 CVD 是成年的,由使用一个冷墙的反应堆,然后转到 Si/SiO 2 。我们的低温度的磁电机运输数据证明单个水晶的 CVD graphene 样品的特征比多晶的 graphene 的那些优异并且有比得上 Si/SiO 2 上的 exfoliated graphene 的质量。在我们的最好的样品的迪拉克点发生在比 10 V,和 11,000 厘米 2/(V 功能 of-5.4 eV 的最大的活动性低的背门电压,作为搬运洞的层。它的力量变换效率达到了螼?螼 的价值吗?? | Shaohua Xiang Vaidotas Miseikis Luca Planat Stefano Guiducci Stefano Roddaro Camilla Coletti Fabio Beltram Stefan Heun | 2016 | Nano Research2016，9，6： | 0 |
| 11 | Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene显示文摘在伪自立的单层 graphene (QFMLG ) 的接口的 Si 摇契约被知道充当散布能严重地影响搬运人活动性的中心。此处,我们调查用低温度的扫描在 QFMLG 挂契约的 Si 的原子、电子的结构通道显微镜学 / 光谱学(STM/STS ) ,原子力量显微镜学(AFM ) ,和密度功能的理论(DFT ) 计算。有不同对比的缺点的二种类型被 STM 和 AFM 在一个扁平的 graphene 平台上观察;特别地,他们的 STM 对比与偏爱电压变化了。而且,这些缺点在不同精力显示出典型的圣山峰, 1.1 和 1.4 eV。有 DFT 计算的试验性的数据的比较显示有 1.1 和 1.4 eV 的圣山峰精力的缺点由分别地挂契约的三和四 Si 的簇组成。graphene 合成的优化的现在的结果的关联被讨论。 | Yuya Murata Tommaso Cavallucci Valentina Tozzini Niko Pavliček Leo Gross Gerhard Meyer Makoto Takamura Hiroki Hibino Fabio Beltram Stefan Heun | 2018 | Nano Research2018，11，2： | 0 |
| 12 | Scanning gate imaging of quantum point contacts and the origin of the 0.7 anomaly显示文摘出现在传导力 G 0.7 睯物 ? 的异常运输特征的起源 ???????????? 瀠潲慰慧楴湯景 ? 慮潮楷敲?? | Andrea lagallo Nicola Paradiso Stefano Roddaro Christian Reichl Werner Wegscheider Giorgio Biasiol Lucia Sorba Fabio Beltram Stefan Heun | 2015 | Nano Research2015，8，3： | 0 |
| 13 | Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires显示文摘We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/lnP/GaAsSb core-dualshell nanowires.We present a device fabrication protocol based on wet-etching processes on selected areas of the nanostructures that enables multiple configurations of measurements in the same nanowire-based device(i.e.shell-shell,core-core and core-shell).Low-temperature(4.2 K)transport in the shell-shell configuration in nanowires with 5 nm-thick InP barrier reveals a weak negative differential resistance.Differently,when the InP barrier thickness is increased to 10 nm,this negative differential resistance is fully quenched.The electrical resistance between the InAs core and the GaAsSb shell,measured in core-shell configuration,is significantly higher with respect to the resistance of the InAs core and of the GaAsSb shell.The field effect,applied via a back-gate,has an opposite impact on the electrical transport in the core and in the shell portions.Our results show that electron and hole free carriers populate the InAs and GaAsSb regions respectively and indicate InAs/InP/GaAsSb core-dualshell nanowires as an ideal system for the investigation of the physics of interacting electrons and holes at the nanoscale. | Sedighe Salimian Omer Arif Valentina Zannier Daniele Ercolani Francesca Rossi Zahra Sadre Momtaz Fabio Beltram Sefano Roddaro Francesco Rossella Lucia Sorba | 2020 | Nano Research2020，13，4： | 0 |
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