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| 1 | Hot-Electron Effects in InAs Nanowire Josephson Junctions显示文摘在一个电子系统精力分发定制控制打开方法到有趣的新物理和设备概念,在最近的年期间由关于金属性的 nanodevices 的研究示威了。这里,我们调查在一个 superconductor-InAs nanowire 连接联合的 Josephson 怎么能借助于热电子的注射被调节,我们证明超导的效果的完全的抑制能用象 100 pW 一样低的力量被完成。他们允许轴、光线的 heterostructures 象对做的控制一样被定义的新奇设计自由介绍的 Nanowires 提议,它能作为精确控制的 nanorefrigeratorswhere 和可预言的精力障碍在 devicessuch 的开发关键是强制的。我们的工作为未知关键热、电的参数提供估计,例如联合的电子声子,在我们的 InAs nanostructures。 | Stefano Roddaro Andrea Pescaglini Daniele Ercolani Lucia Sorba Francesco Giazotto Fabio Beltram | 2011 | Nano Research2011，4，3： | 1 |
| 2 | Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy显示文摘Semiconductor nanowire field-effect transistors represent a promising platform for the development of roomtemperature(RT)terahertz(THz)frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers(<1 nW Hz^(−1/2))and high responsivities(>100 V/W).Nano-engineering an NW photodetector combining high sensitivity with high speed(subns)in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics,but this requires a clear understanding of the origin of the photo-response.Conventional electrical and optical measurements,however,cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated.Here,we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution(35 nm)THz photocurrent nanoscopy.By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy(s-SNOM)and monitoring both electrical and optical readouts,we simultaneously measure transport and scattering properties.The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric and bolometric currents whose interplay is discussed as a function of photon density and material doping,therefore providing a route to engineer photo-responses by design. | Eva A.A.Pogna Mahdi Asgari Valentina Zannier Lucia Sorba Leonardo Viti Miriam S.Vitiello | 2020 | Light(Science & Applications)2020，9，1： | 1 |
| 3 | Large thermal biasing of individual gated nanostructures显示文摘 | Stefano Roddaro Daniele Ercolani Mian Akif Safeen Francesco Rossella Vincenzo Piazza Francesco Giazotto Lucia Sorba Fabio Beltram | 2014 | Nano Research2014，7，4： | 1 |
| 4 | Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis显示文摘Nanowires (NW ) 是为在热电的行为上探索低维数和热传导性抑制的效果的理想的 nanostructures。然而,它正在质问精确地在如此的系统测量温度坡度和热流动。用空间地解决的拉曼光谱学和运输大小的联合,这里,我们决定单个做 Se 的 InSb NW 的所有热电的性质并且确定优点 ZT 的数字。在 NW 和联系电的反应的测量导致激光的加热被一个 1D 热方程模型很好描述。我们的方法在来源和 NW 的排水管电极允许热接触电阻的决心,它在我们的系统是可以忽略的。InSb NW 的测量热电的参数同意很好,那些基于地效果晶体管 Seebeck 大小获得了。 | Sara Yazji Eric A. Hoffman Daniele Ercolani Francesco Rossella Alessandro Pitanti Alessandro Cavalli Stefano Roddaro Gerhard Abstreiter Lucia Sorba Ilaria Zardo | 2015 | Nano Research2015，8，12： | 1 |
| 5 | Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires显示文摘Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing.In this context,unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications.Here,we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende(WZ/ZB)crystal-phase quantum dots(QDs)realized in single InP nanowires.The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy.The electron(hole)g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature(4.2 K)with different magnetic field configurations,and rationalized by invoking the spin-correlated orbital current model.Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires. | Shiyao Wu Kai Peng Sergio Battiato Valentina Zannier Andrea Bertoni Guido Goldoni Xin Xie Jingnan Yang Shan Xiao Chenjiang Qian Feilong Song Sibai Sun Jianchen Dang Yang Yu Fabio Beltram Lucia Sorba Ang Li Bei-bei Li Francesco Rossella Xiulai Xu | 2019 | Nano Research2019，12，11： | 1 |
| 6 | Scanning gate imaging of quantum point contacts and the origin of the 0.7 anomaly显示文摘出现在传导力 G 0.7 睯物 ? 的异常运输特征的起源 ???????????? 瀠潲慰慧楴湯景 ? 慮潮楷敲?? | Andrea lagallo Nicola Paradiso Stefano Roddaro Christian Reichl Werner Wegscheider Giorgio Biasiol Lucia Sorba Fabio Beltram Stefan Heun | 2015 | Nano Research2015，8，3： | 0 |
| 7 | Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires显示文摘We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/lnP/GaAsSb core-dualshell nanowires.We present a device fabrication protocol based on wet-etching processes on selected areas of the nanostructures that enables multiple configurations of measurements in the same nanowire-based device(i.e.shell-shell,core-core and core-shell).Low-temperature(4.2 K)transport in the shell-shell configuration in nanowires with 5 nm-thick InP barrier reveals a weak negative differential resistance.Differently,when the InP barrier thickness is increased to 10 nm,this negative differential resistance is fully quenched.The electrical resistance between the InAs core and the GaAsSb shell,measured in core-shell configuration,is significantly higher with respect to the resistance of the InAs core and of the GaAsSb shell.The field effect,applied via a back-gate,has an opposite impact on the electrical transport in the core and in the shell portions.Our results show that electron and hole free carriers populate the InAs and GaAsSb regions respectively and indicate InAs/InP/GaAsSb core-dualshell nanowires as an ideal system for the investigation of the physics of interacting electrons and holes at the nanoscale. | Sedighe Salimian Omer Arif Valentina Zannier Daniele Ercolani Francesca Rossi Zahra Sadre Momtaz Fabio Beltram Sefano Roddaro Francesco Rossella Lucia Sorba | 2020 | Nano Research2020，13，4： | 0 |
| 8 | InAs nanowire superconducting tunnel junctions: Quasiparticle spectroscopy, thermometry, and nanorefrigeration显示文摘我们为创造在超导的艾尔水库和 InAs 半导体 nanowires (NW ) 之间的高质量的隧道连接基于控制氧化表明一个原来的方法。我们与当前的抑制显示出干净隧道特征由 > 为在艾尔下面好的连接偏爱的 4 个数量级 0 豁开 200 eV。试验性的数据为一个超导的隧道连接与 Bardeen-Cooper-Schrieffer 理论期望同意很好。学习设备采用小规模的隧道接触工作提供 proof-of-principle 的同样多以及更大的电极在 NW 的电子分发的活跃冷却。山峰制冷近似 T = 10 mK 在 T 为我们的原型设备的洗澡 250-350 mK。这个方法在半导体 nanostructures 并且为 nanoscale 制冷为热电的效果的调查介绍重要观点。 | Jaakko Mastomaki Stefano Roddaro Mirko Rocci Valentina Zannier Daniele Ercolani Lucia Sorba Ilari J. Maasilta Nadia Ligato Antonio Fornieri Elia Strambini Francesco Giazotto | 2017 | Nano Research2017，10，10： | 0 |
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