|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Study of the minerogenetic mechanism and origin of Qinghai nephrite from Golmud, Qinghai, Northwest China显示文摘Electronic microprobe analysis showed that all QN samples are mainly composed of tremolite and minor accessory minerals, such as diopside, calcite, serpentinite, and magnetite. According to the cation coefficients, the crystallo-chemistrygenesis illustration demonstrates that all QN deposits are contact metasomatic. Depending on the mole percent of Fe^(2+(3+))/(Mg^(2+)+Fe^(2+(3+)) and the content of Cr, Co, and Ni in all QN samples measured by X-ray fluorescence spectroscopy(XRF) and inductively coupled plasma-mass spectrometry(ICP-MS), green and azure-green QNs are characterized as serpentinite-related contact metasomatic deposit(S-type), whereas white, green-white, brown, blue-violet, yellow, and viridis QNs are dolomite-related contact metasomatic deposit(D-type). The assemblages and chemical composition of accessory minerals of the eight-color QN samples show evident characteristics, which reveal four possible ore-forming processes. We also measured trace and rare earth elements(REEs) in these samples through ICP-MS to deduce the origin of and the changes in metallogenic conditions. The chondrite-normalized REE patterns of D-type QN exhibit moderately negative Eu anomalies with moderate light REE enrichment, flat heavy REE(HREE), and low(50)REE concentrations, similar to dolomitic marble. Green QN samples of S-type show enrichment in HREE and moderately negative Eu anomalies, which is consistent with characteristics of dunite. Whereas azure-green QN samples of S-type exhibit a right-dipping V-type curve with severe depletion in Eu(δEu=0.36–0.47), in accordance with the characteristics of gabbro from Yushigou ophiolite in North Qilian mountains. Furthermore, this finding is consistent with the content of trace elements and the petrographic analysis results. On the basis of several significant differences in the characteristic elements, which may have been affected by the metallogenic environment, we inferred the differences in oxygen fugacity and basicity of mineralization environments in different-colored QNs. | YU HaiYan WANG RuCheng GUO JiChun LI JiaGui YANG XiaoWen | 2016 | Science China Earth Sciences2016，59，8： | 8 |
| 2 | Late Mesozoic Thermotectonic Evolution of the Jueluotage Range,Eastern Xinjiang,Northwest China:Evidence from Apatite Fission Track Data显示文摘摘要:尽管许多作者强调了变丑的新生代历史,发掘并且在与印度亚洲碰撞有关的 Tianshan 区域冷却,几乎不对压缩的中生代历史被知道并且在 Tianshan 以内高举。以便关于中生代发掘历史和在东方 Tianshan 冷却的进程获得信息,磷灰石上的分裂磁道方法被使用。采样在 Jueluotage 范围被做。三件样品(Z001-Z003 ) 在 Yandong pluton 的地上凿穿 ZK6301 从花岗石被拿;从比是的 pluton 年龄年轻得多的 97.0 ~ 87.6 妈的年龄范围在 334 点由 U-Pb 锆石标明日期 ????????? Y ?? 霈吗?? | ZHU Wenbin WAN Jinglin SHU Liangshu ZHANG Zhiyong SU Jinbao SUN Yah GUO Jichun ZHANG Xueyun | 2008 | Acta Geologica Sinica(English Edition)2008，82，2： | 4 |
| 3 | Revealing the surface electronic structures of AIGaN deep-ultraviolet multiple quantum wells with lateral polarity domains显示文摘We report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs)with lateral polarity domains.The localized potential maximum is predicted near the domain boundaries by first-principle calculation,suggesting carrier localization and efficient radiative recombination.More importantly,lateral band diagrams of the MQWs are proposed based on electron affinities and valance band levels calculated from ultraviolet(UV)photoelectron spectroscopy.The proposed lateral band diagram is further demonstrated by surface potential distribution collected by Kelvin probe microscopy and the density-of-state calculation of energy bands.This work illustrates that lateral polarity structures are playing essential roles in the electronic properties of II nitride photonic devices and may provide novel perspective in the realization of high-efficiency UV emitters. | WEI GUO LI CHEN HOUQIANG XU YINGDA QIAN MOHEB SHEIKHI JASON HOO SHIPING GUO LIANG XU JIANZHE LU FERAS ALQATARI XIAOHANG LI KAIYAN HE ZHE CHUAN FENG JICHUN YE | 2020 | Photonics Research2020，8，6： | 2 |
| 4 | Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs显示文摘AlGaN-based solid state UV emitters have many advantages over conventional UV sources. However, UV-LEDs still suffer from numerous challenges, including low quantum efficiency compared to their blue LED counterparts. One of the inherent reasons is a lack of carrier localization effect inside fully miscible AlGaN alloys. In the pursuit of phase separation and carrier localization inside the active region of AlGaN UV-LED, utilization of highly misoriented substrates proves to be useful, yet the carrier distribution and recombination mechanism in such structures has seldom been reported. In this paper, a UV-LED with step-bunched surface morphology was designed and fabricated, and the internal mechanism of high internal quantum efficiency was studied in detail. The correlation between microscale current distribution and surface morphology was provided, directly demonstrating that current prefers to flow through the step edges of the epitaxial layers. Experimental results were further supported by numerical simulation. It was found that efficient radiative recombination centers were formed in the inclined quantum well regions. A schematic three-dimensional energy band structure of the multiple quantum wells(MQWs) across the step was proposed and helps in further understanding the luminescence behavior of LEDs grown on misoriented substrates. Finally, a general principle to achieve carrier localization was proposed, which is valid for most ternary Ⅲ-Ⅴ semiconductors exhibiting phase separation. | HOUQIANG XU JIEAN JIANG LI CHEN JASON HOO LONG YAN SHIPING GUO CAI SHEN YANPING WEI HUA SHAO ZI-HUI ZHANG WEI GUO JICHUN YE | 2021 | Photonics Research2021，9，5： | 2 |
| 5 | Lin28 promotes Her2 expression and Lin28/Her2 predicts poorer survival in gastric cancer显示文摘 | Qinchuan Wang Jichun Zhou Jufeng Guo Rongyue Teng Jianguo Shen Yasheng Huang Shuduo Xie Qun Wei Wenhe Zhao Wenjun Chen Xiaoming Yuan Yongxia Chen Linbo Wang | 2014 | Tumor Biology2014，，11： | 1 |
| 6 | Efficacy of tea polyphenols(TP 50) against radiation-induced hematopoietic and biochemical alterations in beagle dogs显示文摘OBJECTIVE:To investigate the radioprotective ef fect of tea polyphenols(TP 50)against radiation-in duced organ and tissue damage.METHODS:Beagle dogs were exposed to a single acute dose of whole-body y-radiation(3 Gy)and orally administered TP 50(80 or 240 mg·kg-1·d-1)for 28 consecutive days.A hemogram was obtained from experimental dogs every other day for 42 d.At the end of the experiment,enzyme activities of the antioxidants superoxide-dismutase and glutathione peroxidase,serum levels of inflammatory cytokines(tumor necrosis factor-a,interleukin-1β,and interleukin-6),colony-forming units of bone marrow hematopoietic progenitor cells,and organ coefficients were measured.RESULTS:Dogs exposed to γ-radiation alone exhibited typical hematopoietic syndrome.In contrast,irradiated dogs that received TP 50 exhibited an improved blood profile with reduced leucopenia,thrombocytopenia(platelet counts),and reticulocyte levels.TP 50 also significantly elevated levels of the endogenous antioxidant enzyme superoxide-dismutase,reduced the increased levels of serum cytokine in response to radiation-induced toxicity,and increased colony-forming units of bone marrow hematopoietic progenitor cells.In addition,TP 50 repaired radiation-induced organ damage.CONCLUSION:The current findings suggest that oral administration of TP 50 to beagle dogs effectively alleviated hematopoietic bone marrow damage induced by y-radiation. | Dong Xianzhe Wang Dongxiao Han Jichun Luo Qingliang Guo Daihong Liu Ping Yan Can Hu Yuan | 2019 | Journal of Traditional Chinese Medicine2019，39，3： | 1 |
| 7 | Overexpression of ERα inhibits proliferation and invasion of MKN28 gastriccancer cells by suppressing β-catenin显示文摘 | Jichun Zhou Rongyue Teng Chaoyang Xu Qinchuan Wang Jufeng Guo Chenpu Xu Ziduo Li Shuduo Xie Jianguo Shen Linbo Wang | 2013 | Oncology Reports2013，，4： | 1 |
| 8 | Cataclastic rheology of carbonate rocks显示文摘Based on the knowledge of the shallow-level mylonitization of detrital rocks and intrusive rocks, the poorly-known cataclastic rheology of carbonate rocks is discussed compre-hensively in this paper. The cases taken from eastern China are analyzed in various aspects including ductile-brittle fault zone, rock texture and structure, clastomylonite layer, leucocratic stress minerals, and frictional dynamometamorphism. It is proposed that the cataclastic flow structure represented by clastomylonite texture is a cooling pattern of flow assemblage charac-terized by cooling metamorphism, cooling mylonite and cooling stress minerals. Such a pattern is formed generally in mildly reducing physicochemical environments, and is commonly related to regional tectonism and mesothermal and epithermal mineralization. | LU Xiancai SUN Yan SHU Liangshu GU Lianxing GUO Jichun ZHU Wenbin | 2005 | Science China Earth Sciences2005，48，8： | 1 |
| 9 | Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes显示文摘SemipolarⅢ-nitrides have attracted increasing attention in applications of optoelectronic devices due to the much reduced polarization field.A high-quality semipolar AlN template is the building block of semipolar AlGaN-based deep-ultraviolet light emitting diodes(DUV LEDs),and thus deserves special attention.In this work,a multi-step in situ interface modification technique is developed for the first time,to our knowledge,to achieve high-quality semipolar AlN templates.The stacking faults were efficiently blocked due to the modification of atomic configurations at the related interfaces.Coherently regrown AlGaN layers were obtained on the in situ treated AlN template,and stacking faults were eliminated in the post-grown AlGaN layers.The strains between AlGaN layers were relaxed through a dislocation glide in the basal plane and misfit dislocations at the heterointerfaces.In contrast,high-temperature ex situ annealing shows great improvement in defect annihilation,yet suffers from severe lattice distortion with strong compressive strain in the AlN template,which is unfavorable to the post-grown AlGaN layers.The strong enhancement of luminous intensity is achieved in in situ treated AlGaN DUV LEDs.The in situ interface modification technique proposed in this work is proven to be an efficient method for the preparation of high-quality semipolar Al N,showing great potential towards the realization of high-efficiency optoelectronic devices. | LI CHEN JIE SUN WEI GUO JASON HOO WEI LIN HANGYANG CHEN HOUQIANG XU LONG YAN SHIPING GUO JUNYONG KANG JICHUN YE | 2022 | Photonics Research2022，10，12： | 0 |
| 10 | Lateral polarity control ofⅢ-nitride thin film and application in GaN Schottky barrier diode显示文摘N-polar and Ⅲ-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported.Surface morphology,wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains,respectively.The influence of N-polarity on on-state resistivity and Ⅰ–Ⅴ characteristic was discussed,demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. | Junmei Li Wei Guo Moheb Sheikhi Hongwei Li Baoxue Bo Jichun Ye | 2018 | Journal of Semiconductors2018，39，5： | 0 |
| 11 | Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations显示文摘AlN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing(HTTA)on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the(0002)diffraction peak to as low as 68 arcsec of AlN after HTTA implies a reduction of tilt component inside the AlN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high)Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AlN regardless of sapphire orienta-tion. | Xianchun Peng Jie Sun Huan Liu Liang Li Qikun Wang Liang Wu Wei Guo Fanping Meng Li Chen Feng Huang Jichun Ye | 2022 | Journal of Semiconductors2022，43，2： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员