|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Simulation of double junction In0.46Ga0.54N/Si tandem solar cell显示文摘A comprehensive study of high efficiency In_(0.46)Ga_(0.54)N/Si tandem solar cell is presented.A tunnel junction(TJ) was needed to interconnect the top and bottom sub-cells.Two TJ designs,integrated within this tandem:GaAs(n^+)/GaAs(p^+) and In_(0.5)Ga_(0.5)N(n^+)/Si(p^+) were considered.Simulations of GaAs(n^+)/GaAs(p^+)and In_(0.5)Ga_(0.5)N(n^+)/Si(p^+) TJ I-V characteristics were studied for integration into the proposed tandem solar cell.A comparison of the simulated solar cell I-V characteristics under 1 sun AM1.5 spectrum was discussed in terms of short circuit current density(J_(SC)),open circuit voltage(V_(OC)),fill factor(FF) and efficiency(η) for both tunnel junction designs.Using GaAs(n^+)/GaAs(p^+) tunnel junction,the obtained values of J_(SC) = 21.74 mA/cm^2,V_(OC)= 1,81 V,FF = 0.87 and η=34.28%,whereas the solar cell with the In_(0.5)Ga_(0.5)N/Si tunnel junction reported values of J_(SC)= 21.92 mA/cm^2,V_(OC)= 1.81 V,FF = 0.88 and η= 35.01%.The results found that required thicknesses for GaAs(n^+)/GaAs(p^+) and In_(0.5)Ga_(0.5)N(n^+)/Si(p^+) tunnel junctions are around 20 nm,the total thickness of the top InGaN can be very small due to its high optical absorption coefficient and the use of a relatively thick bottom cell is necessary to increase the conversion efficiency. | M.Benaicha L.Dehimi Nouredine Sengouga | 2017 | Journal of Semiconductors2017，38，4： | 1 |
| 2 | Simulation analysis of a high efficiency GaInP/Si multijunction solar cell显示文摘The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures.In particular,to interconnect the bottom and top sub-cells of the monolithic tandem,a gallium arsenide(GaAs)-based tunnel-junction,i.e.GaAs(n+)/GaAs(p+),which assures a low electrical resistance and an optically low-loss connection,has been considered.The J–V characteristics of the single junction cells,monolithic tandem,and mechanically stacked structure have been calculated extracting the main photovoltaic parameters.An analysis of the tunnel-junction behaviour has been also developed.The mechanically stacked cell achieves an efficiency of 24.27%whereas the monolithic tandem reaches an efficiency of 31.11%under AM1.5 spectral conditions.External quantum efficiency simulations have evaluated the useful wavelength range.The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+)tunnel junction. | M.Benaicha L.Dehimi F.Pezzimenti F.Bouzid | 2020 | Journal of Semiconductors2020，41，3： | 0 |
| 3 | Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode显示文摘The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitride(GaN)-based QW laser diode are investigated by means of a careful modelling analysis in a wide range of temperatures.The device’s optical gain is calculated by using two different band energy models.The first is based on the simple band-to-band model that accounts for carrier transitions between the first levels of the conduction band and valence band,whereas the second assumes the perturbation theory(k.p model)for considering the valence intersubband transitions and the relative absorption losses in the QW.The results reveal that the optical gain increases with increasing the n-type doping density as well as the Al molar fraction of the AlxGa1–xN layers,which originate the GaN compressivestrained QW.In particular,a significant optical gain on the order of 5000 cm^-1 is calculated for a QW width of 40A at room temperature.In addition,the laser threshold current density is of few tens of A/cm^2 at low temperatures. | A.Menani L.Dehimi S.Dehimi F.Pezzimenti | 2020 | Journal of Semiconductors2020，41，6： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员