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您的检索式：作者名="M.Benaicha"
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| 1 | Simulation of double junction In0.46Ga0.54N/Si tandem solar cell显示文摘A comprehensive study of high efficiency In_(0.46)Ga_(0.54)N/Si tandem solar cell is presented.A tunnel junction(TJ) was needed to interconnect the top and bottom sub-cells.Two TJ designs,integrated within this tandem:GaAs(n^+)/GaAs(p^+) and In_(0.5)Ga_(0.5)N(n^+)/Si(p^+) were considered.Simulations of GaAs(n^+)/GaAs(p^+)and In_(0.5)Ga_(0.5)N(n^+)/Si(p^+) TJ I-V characteristics were studied for integration into the proposed tandem solar cell.A comparison of the simulated solar cell I-V characteristics under 1 sun AM1.5 spectrum was discussed in terms of short circuit current density(J_(SC)),open circuit voltage(V_(OC)),fill factor(FF) and efficiency(η) for both tunnel junction designs.Using GaAs(n^+)/GaAs(p^+) tunnel junction,the obtained values of J_(SC) = 21.74 mA/cm^2,V_(OC)= 1,81 V,FF = 0.87 and η=34.28%,whereas the solar cell with the In_(0.5)Ga_(0.5)N/Si tunnel junction reported values of J_(SC)= 21.92 mA/cm^2,V_(OC)= 1.81 V,FF = 0.88 and η= 35.01%.The results found that required thicknesses for GaAs(n^+)/GaAs(p^+) and In_(0.5)Ga_(0.5)N(n^+)/Si(p^+) tunnel junctions are around 20 nm,the total thickness of the top InGaN can be very small due to its high optical absorption coefficient and the use of a relatively thick bottom cell is necessary to increase the conversion efficiency. | M.Benaicha L.Dehimi Nouredine Sengouga | 2017 | Journal of Semiconductors2017，38，4： | 1 |
| 2 | Simulation analysis of a high efficiency GaInP/Si multijunction solar cell显示文摘The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures.In particular,to interconnect the bottom and top sub-cells of the monolithic tandem,a gallium arsenide(GaAs)-based tunnel-junction,i.e.GaAs(n+)/GaAs(p+),which assures a low electrical resistance and an optically low-loss connection,has been considered.The J–V characteristics of the single junction cells,monolithic tandem,and mechanically stacked structure have been calculated extracting the main photovoltaic parameters.An analysis of the tunnel-junction behaviour has been also developed.The mechanically stacked cell achieves an efficiency of 24.27%whereas the monolithic tandem reaches an efficiency of 31.11%under AM1.5 spectral conditions.External quantum efficiency simulations have evaluated the useful wavelength range.The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+)tunnel junction. | M.Benaicha L.Dehimi F.Pezzimenti F.Bouzid | 2020 | Journal of Semiconductors2020，41，3： | 0 |
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