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| 1 | Quasi-phase-matched third-harmonic generation in a quasi-periodic optical superlattice显示文摘 | Zhu Shining Zhu Youyuan Ming Naiben | 1997 | Science1997，278，： | 1 |
| 2 | Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks显示文摘The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get suffcient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic-scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy (HRTEM) and the related techniques based on scanning transmission electron microscopy (STEM), including high-angle annular dark-field (HAADF) imaging (also known as Z-contrast imaging), electron energy-loss spectroscopy (EELS), and energy dispersive X-ray spectroscopy (EDS), due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are brieffy introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks. | Xinhua Zhu Jian-min Zhu Aidong Li Zhiguo Liu Naiben Ming | 2009 | Journal of Materials Science & Technology2009，25，3： | 1 |
| 3 | Competition of various spin states of LaCoO3 显示文摘 | Min Zhuang Weiyi Zhang Naiben Ming | 1998 | Phys Rev B1998，57，10： | 1 |
| 4 | The synthesis of HgS microcrystallites with controllable structure and morphology显示文摘 | Jianhui Zhang Zuo Chen Zhenlin Wang Naiben Ming | 2004 | Materials Research Bulletin2004，，： | 1 |
| 5 | Quasi - Phase - Matched Third- Harmonic Generation in a Quasi - Periodic Optical Superlattice显示文摘 | Zhu Yongyuan Min Naiben | 1997 | Science1997，278，31： | 1 |
| 6 | Dielectric Superlattices for Nonlinear Optical Effects显示文摘 | Min Naiben | 1999 | Optical and Quantum Electronic1999，，31： | 1 |
| 7 | Stacking Faults as Self-perpetuating Step Sources 显示文摘 | Min Naiben T~kamoto K Sunagawa I | 1988 | J Crystal Growth1988，91，： | 1 |
| 8 | Optical properties of heterodiamond B 2 CN using first-principles calculations显示文摘 | SUN Jian WANG Huitian MING Naiben | 2004 | Applied Physics Letters2004，84，22： | 1 |
| 9 | Surface roughening and surface diffusion in kinetic thin-film deposition显示文摘 | XIAO Rongfu MING Naiben | 1994 | Phys Rev E1994，49，5： | 1 |
| 10 | Bottom-up fabrication approaches to novel plasmonic materials显示文摘Recent research effort towards developing novel metal nanoparticles(NPs)and their ordered arrays have been motivated by the emergence of plasmonics.In particular,tuning the size,morphology,composition and the separation of metal NPs has allowed us to engineer the collective properties of plasmonic crystals for specific applications.Here we present our recent development of bottom-up growth methods and demonstrate convenience for the preparation of such plasmonic materials.By implementation of physical,chemical,or electrochemical deposition of a metal in combination with micromolding on two-dimensional colloidal crystals,metallic NPs with a variety of morphologies can be created in an ordered lattice.The prepared novel plasmonic crystals could find applications in optics,optoelectronics,materials science,sensing and biophysics. | CHEN Zhuo ZHAN Peng DONG Wen LI YuanYuan TANG ChaoJun MIN NaiBen WANG ZhenLin | 2010 | Chinese Science Bulletin2010，55，24： | 1 |
| 11 | Competition of various spin states of LaCoO3 显示文摘 | Zhuang Min Zhang Weiyi Ming Naiben | 1998 | Phys Rev B1998，57，10： | 1 |
| 12 | A Study of 90°Ferroelectric Domain Structures in PbTiO_(3) Thin Films by Means of Transmission Electron Microscopy显示文摘PbTiO_(3) thin films prepared by metalorganic chemical vapor deposition method were investigated using a transmission electron microscope.The as-deposited thin films were highly c-axis oriented,90°a-c domains were observed And their crystallographic characteristics were investigated.Tetragonality of the PbTiO_(3) films was also obtained.The disappearance of 90°domains in the very thin film was found and attributed to surface relaxation effect. | MA Wenhui LI Qi CHEN Yanfeng YU Tao SHUN Li MIN Naiben | 1995 | Chinese Physics Letters1995，12，12： | 0 |
| 13 | n-Pentylamine-intercalated layered perovskite-type oxide显示文摘A novel n-pentylamine-intercalated layered perovskite-type oxide, C5H11NH3-Sr2Nb3O10, was prepared and characterized by using XRD, FT-IR, Raman spec-trascopy, and elemental analysis. It was shown that the intercalated n-pentylamine adopted a bilayer formation with some overlap and tilt, and the lattice of the perovskite layer was distorted due to the intercalation of n-pentylamine. The as-prepared sample gave clear electric hysteresis loop and did not show fatigue after 1011 switching circles, and therefore, could be considered as a new kind of fatigue-free ferroelectric materials. | HOU Wenhua ZHONG Zhaohui DING Weiping CHEN Yi CHEN Xiaoyuan ZHU Yongyuan MIN Naiben | 2001 | Chinese Science Bulletin2001，46，8： | 0 |
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