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26篇 您的检索式：作者名="PINER E"

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	题名	作者	年代	出处	被引量
1	Graphene-based composite materials 显示文摘	Stankovich S Dikin D A Dommett G H B Kohlhaas K M Zimney E J Stach E A Piner R D Nguyen S T Ruoff R S	2006	Nature2006，442，7100：	1
2	Preparation and characterization of graphene oxide paper 显示文摘	DIKIN D A STANKOVICH S ZIMNEY E J PINER R D DOMMETT G H B EVMENENKO G NGUYEN S T RUOFF R S	2007	Nature2007，448，：	1
3	Seamless on-wafe integration of Si (100) MOSFETs and GaN HEMTs 显示文摘	CHUNG J W LEE J PINER E L	2009	IEEE Electron Device Letters2009，30，10：	1
4	Preparation and characterization of graphene oxide paper 显示文摘	Dikin D A Stankovich S Zimney E J Piner R D Dommett G H B Evmenenko G Nguyen S T Ruoff R S	2007	Nature2007，448，：	1
5	12 W/ram A1GaN-GaN HFETs on silicon substrates显示文摘	Johnson J W Piner E L Vescan A	2004	IEEE Electron Device Letters2004，25，8：	1
6	Large-area synthesis of high-quality and uniform graphene films on copper foils 显示文摘	Li X Cai W An J Kim S Nab J Yang D Piner R Velamakanni A Jung I Tutuc E Banerjee SK Colombo L Ruoff RS	2009	Science2009，324，：	1
7	Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition 显示文摘	BEHBEHANI M K PINER E L LIU S X	1999	Appl Phys Lett1999，75，：	1
8	N-face GaN/ A1GaN HEMTs fabricated through layer transfer technology 显示文摘	CHUNG J W PINER E L PALACIOS T	2009	Electron Device Letters2009，30，2：	1
9	Impurity dependence on hydrogen and ammonia flow rate in InGaN bulk films显示文摘	Piner E L Behbehani M K El-Masry N A	1997	Appl Phys Lett1997，71，14：	1
10	Microwave noise performance of AlGaN/GaN HEMTs 显示文摘	PING A T PINER E REDWING J	2000	Electronics Letters2000，36，2：	1
11	Large-area synthesis of high-quality and uniform graphene films on copper foils 显示文摘	Li X S Cai W W An J H Kim S Nah J Yang D X Piner R Velamakanni A Jung I Tutuc E Banerjee S K Colombo L Ruoff R S	2009	Science2009，324，5932：	1
12	Preparation and characterization of graphene oxide paper 显示文摘	Dikin D A Zimney E J Piner R D	2007	Nature Letters2007，448，：	1
13	12 W/ram AlGaN-GaN HFETs on silicon substrates显示文摘	Johnson J W Piner E L Vescan A	2004	IEEE Electron Device Lett2004，25，7：	1
14	Preparation and characterization of graphene oxide paper显示文摘	Dikin D A Zimney E J Piner R D	2007	Nature Letters2007，448，7152：	1
15	Preparation and charac- terization of graphene oxide paper显示文摘	Dikin D A Stankovieh S Zimney E J Piner R D Dom- mett G H B Evmenenko G etal	2007	Nature2007，448，7152：	1
16	Effect of hydrogen on the indium incorporation in InOaN epitaxial films显示文摘	Piner E L Behbehani M K E1-Masry N A	1997	Appl Phys Lett1997，70，：	1
17	Graphene-based composite materials显示文摘	Stach E A Piner R D Nguyen S T	2006	Nature2006，44，：	1
18	Effect of hydrogen on the indium incorporation in lnGaN epitaxial film 显示文摘	Piner E L Behbehani M K EIMasry N A	1997	Appl Phys Lett1997，70，4：	1
19	Ultrasound-Physical,chemical and biological Effects显示文摘	EL'PINER I E	1966	Ultrasonics1966，4，2：	1
20	Influence of Surface Processing and Passivation on Carrier Concentrations and Transport Properties in AIGaN/GaN Heterostructures 显示文摘	Dang X Z Yu E T Piner E J	2001	J Appl Phys2001，90，9：	1

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