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12篇 您的检索式:作者名="Pengxun"
    题名 作者 年代 出处 被引量
1Preparation and particle size characterization of Cu nanoparticles prepared by anodic arc plasma显示文摘Copper nanoparticles were successfully prepared in large scale by means of anodic arc discharging plasma method in inert atmosphere. The particle size, specific surface area, crystal structure, and morphology of the samples were characterized by X-ray diffraction (XRD), BET equation, transmission electron microscopy (TEM), and the corresponding selected area electron diffraction (SAED). The experimental results indicate that the crystal structure of the samples is fcc structure the same as that of the bulk materials. The specific surface area is 11 m2/g, the particle size distribution is 30 to 90 nm, and the average particle size is about 67 nm obtained from TEM and confirmed from XRD and BET results. The nanoparticles with uniform size, high purity, narrow size distribution and spherical shape can be prepared by this convenient and effective method.WEI Zhiqiang XIA Tiandong FENG Wangjun DAI Jianfeng WANG Qing LI Weixue YAN Pengxun 2006Rare Metals2006,25,2:4
2Wald tests for signal detection when uncertainty exists in a target’s spatial-temporal steering vector显示文摘Dear editor,Multichannel signal detection is a basic problem in signal processing,especially in radar systems[1–3].In the real world,the signal steering vector is affected by unadjusted array gain-phase error,maneuverable flight,accelerating flight of a target,and other factors that introduce uncertainties[4].Weijian LIU Jingjing LI Pengxun WANG Xiufeng ZHA Yong-Liang WANG 2020Science China(Information Sciences)2020,63,8:1
3Efficient preparation for Ni nanopowders by anodic arc plasma显示文摘Zhiqiang Wei Tiandong Xia Lifeng Bai Jun Wang Zhiguo Wu Pengxun Yan 2005Materials Letters2005,,6:1
4The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering显示文摘Zhang Guangan Yan Pengxun Wu Zhiguo 2008Applied Surface Science2008,254,:1
5A New Technique for Deposition of Titanium Carbonitride Films at Room Temperature by High Energy Density Pulse Plasma显示文摘Yan Pengxun Yang Size 1995Nuclear Instrument and Methods in Physics Research B1995,95,:1
6Improving the Thermal Stability of Cu_3N Films by Addition of Mn显示文摘Mn-doped Cu_3N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature.The incorporation of Mn can change the preferred growth orientation from Cu-rich plane(111) to N-rich plane(100) due to the improvement of nitridation of Cu.The shrinkage of the lattice and the X-ray photoelectron spectroscopy results reveal that Mn should replace Cu atoms in the lattice or be segregated in the grain boundaries.The thickness of Mn-doped film is smaller than that of the pure one due to the less physisorption of N species among the columnar grains.The mean grain size and the energy gap become larger with increasing Mn concentration to 2.2 at.%and then decrease when the concentration of Mn is higher than 2.2 at.%.Notably,weak doping of 1.5 at.%Mn successfully promotes the decomposed temperature by^50℃.According to the results of XRD and SEM for Mndoped films annealed in vacuum,a possible decomposed mechanism with increasing the annealing temperature is proposed.Xiaoyan Fan Zhenjiang Li Alan Meng Chun Li Zhiguo Wu Pengxun Yan 2015Journal of Materials Science & Technology2015,31,8:1
7A new technique for deposition of titanium carbonitride films at room temperature by high energy density pulse plasma显示文摘Yan Pengxun Yang Size Li Bing 1995Nuclear Instruments and Methods in Physics Research1995,95,:1
8High-Power-Density Plasma Deposition of Diamond-Like Carbons Films显示文摘We present a new method utilizing a high-power-density plasma for depositing diamond-like carbon(DLC)films.The main advantage of this technique is the possibility that films with good adhesion to the substrate can be prepared under room temperature and low pressure.The DLC films are deposited on the silicon substrate successfully.The structure of the DLC films was characterized by high energy electron diffraction,scanning electron microscopy,Raman spectroscopy,x-ray photoelectron spectroscopy,and infrared absorption spectrum.YAN Pengxun YANG Si-ze YANG Jie LI Qing LI Bing LIU Chizi CHEN Xishen 1994Chinese Physics Letters1994,11,9:0
9Influences of deposition parameters on the microstructure and properties of nanostructural TiN films synthesized by filtered cathodic arc plasma显示文摘Titanium nitride (TiN) films with nanostructure were prepared at ambient temperature on a (111) silicon sub- strate by the filtered cathodic arc plasma (FCAP) technology with an in-plane “S” filter. The effects of deposition parame- ters on the grain size, texture and nano-hardness of the films were systematically investigated. The grain size was obtained through calculation using the Scherrer formula and observed by TEM. The results of X-ray diffraction and electron diffrac- tion indicated that increasing either negative substrate bias or argon flow promoted the formation of (111) preferred orienta- tion. High argon flow leads to biaxial texture. The micro-hardness of the TiN films as a function of grain size showed a be- havior according to the Hall-Petch relation under high argon flow.ZHANG Yujuan YAN Pengxun WU Zhiguo ZHANG Pingyu 2005Rare Metals2005,24,4:0
10A comparative study of the properties of TiN films deposited by MAIP and FCAP显示文摘In this study two types of TiN films were prepared, one using the filtered cathodic arc plasma (FCAP) technique with an in-plane'S'filter, and the other using the multi-arc ion-plating (MAIP), and both deposited under the same parameters. Comparisons of the texture, hardness, roughness, tribological and electrochemical corrosion behaviors of the two types of TiN films were given. The TiN films obtained by the FCAP technology were found to be highly uniform, smooth and macroparticle-free. The TiN films deposited by FCAP had a (111) preferred orientation, while there was no texture in the films deposited by MAIP. Under low load the two kinds of TiN coatings had very different wear mechanisms;the films of FCAP had a lower wear rate and friction coefficient compared with the TiN films deposited by the MAIP technique. The dense and hole-free structure of TiN films of FCAP could effectively avoid the avalanche of TiN films from the substrate during corrosion tests.ZHANG Yujuan NIU Jian WANG Zhi ZHANG Pingyu YAN Pengxun 2007Rare Metals2007,26,6:0
11Coating curly carbon nanotubes with monocrystalline Zn(BO_2)_2 and the mechanism of straightening the tubes显示文摘We overgrew single-crystalline Zn(BO2)2 coatings on carbon nanotubes (CNTs) for the first time. Scanning electron microscopy and transmission electron mi- croscopy analyses revealed that the carbon nanotube-zinc borate composite rods are from tens to hundreds of nm in diameter. It is notable that the original curly tubes were straightened by the monocrystalline coatings. In addition, the crystal nucleation and growth on the surface of CNT were explained. We set a two-dimensional model, which is based on our experimental result, to qualitatively explain the mechanism of straightening the curly tubes by coating them with single-crystals.LIU Jinzhang YAN Pengxun YUE Guanghui 2006Science China(Physics,Mechanics & Astronomy)2006,49,3:0
12Research on the preparation of amorphous diamond nanorod arrays and their excellent field emitting properties显示文摘Amorphous diamond nanorod arrays with excellent field emitting have been fabricated firstly on the AAO template by the filtered cathodic arc plasma technique. Microscopic analysis has displayed that the nanorods are very uniformly distributed, and the density is very high up to ~109 cm-2. The nanorod arrays are found to have an extremely low turn-on field of 0.16 V/μm, which is lower than other reported materials, and a high- emission current density of 180 mA/cm2 under an applied field of 2 V/μm can also be obtained. Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and filed emitting tester are employed to characterize the nanorod arrays. The field emission mechanism of the nanorod arrays is also discussed.YAN Pengxun LI Xiaochun XU Jianwei LI Xin LI Chun LIU Yang 2006Science China(Technological Sciences)2006,49,2:0
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