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		题名	作者	年代	出处	被引量
	1	Aldol condensa- tion reactions of acetone and formaldehyde over vanadium phos- phate catalysts:Comments on the acid-base properties显示文摘	Richard Tanner Philip Gill Richard Wells	2002	Physical Chemistry Chemical Physics2002，，4：	1
	2	Chemically derived graphene quantum dots for high-strain sensing显示文摘Graphene quantum dots(GQDs)refer to graphene fragments with a lateral dimension typically less than 100 nm,which possess unique electrical and optical properties due to the quantum confinement effect.In this study,we demonstrate that chemically derived graphene quantum dots show great potential for making highly stretchable and cost-effective strain sensors via an electron tunneling mechanism.Stretch-able strain sensors are critical devices for the field of flexible or wearable electronics which are expected to maintain function up to high strain values(>30%).However,strain sensors based on conventional materials(i.e.metal or semiconductors)or metal nanoparticles(e.g.gold or silver nanoparticles)only work within a small range of strain(i.e.the former have a working range<1%and the latter<3%).In this study,by simply dropcasting solution-processed GQDs between the interdigitated electrodes on polydimethylsiloxane,we obtained devices that can function in the range from 0.06%to over 50%ten-sile strain with both the sensitivity and working range conveniently adjustable by the concentration of GQDs applied.This study provides a new concept for practical applications of GQDs,revealing the poten-tial of this material for smart applications such as artificial skin,human-machine interfaces,and health monitoring.	Shujun Wang Francesco Lenzini Dechao Chen Philip Tanner Jisheng Han David Thiel Mirko Lobino Qin Li	2023	Journal of Materials Science & Technology2023，，10：	1
	3	The fabrication and characterization of 4H-SiC power UMOSFETs显示文摘The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors(UMOSFETs) is reported in this paper.The device has a 15-μm thick drift layer with 3×1015 cm-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage(Vth) is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance(Rsp-on) is 181 mΩ·cm2 at Vg = 40 V and a blocking voltage(BV) is 880 V(IDS = 100 μA@880V) at Vg = 0 V.	宋庆文张玉明韩吉胜 Philip Tanner Sima Dimitrijev 张义门汤晓燕郭辉	2013	Chinese Physics B2013，22，2：	0

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