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6篇 您的检索式：作者名="Pournia"

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		题名	作者	年代	出处	被引量
	1	Optimiza-tion of initial blank shape predicted based on inverse finite element method 显示文摘	Mohammad Habibi Parsa Payam Pournia	2007	Finite Elements in Analysis and Design2007，43，3：	1
	2	Compari- son of loop-mediated isothermal amplification (LAMP) and nested-PCR assay targeting the RE and B1 gene for detection of Toxoplasma gondii in blood samples of chil- dren with leukaemia 显示文摘	Fallahi S Seyyed Tabaei S J Pournia Y	2014	Diagn Microbiol Infect Dis2014，79，3：	1
	3	Seroepidemiology of hepatitis E virus in Western Iran显示文摘	Rahim Raoofi Mohammad Reza Nazer Ezatollah Rafiei Alavi Yadollah Pournia	2012	Brazilian Journal of Infectious Diseases2012，，：	1
	4	The effect of quality circles on job satisfaction and quality of work-life of staff in emergency medical services显示文摘	Reza Hosseinabadi Arezou Karampourian Shoorangiz Beiranvand Yadollah Pournia	2012	International Emergency Nursing2012，，：	1
	5	Comparison of loop-mediated isothermal amplification (LAMP) and nested-PCR assay targeting the RE and B1 gene for detection of Toxoplasma gondii in blood samples of children with leukaemia显示文摘	Shirzad Fallahi Seyyed Javad Seyyed Tabaei Yadollah Pournia Nozhat Zebardast Bahram Kazemi	2014	Diagnostic Microbiology & Infectious Disease2014，，：	1
	6	Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy显示文摘Nano Research volume We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs.Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory.The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate.From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs.This information is vital to the development of crystal phase engineering of this important III-V semiconductor.	Seyyedesadaf Pournia Samuel Linser Giriraj Jnawali Howard E.Jackson Leigh M.Smith Amira Ameruddin Philippe Caroff Jennifer Wong-Leung Hark Hoe Tan Chennupati Jagadish Hannah J.Joyce	2020	Nano Research2020，13，6：	0

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