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| 1 | Effect of hydrophilic silica nanoparticles on hydrate formation: Insight from the experimental study显示文摘Invasion of drilling fluid into natural gas hydrate deposits during drilling might damage the reservoir,induce hydrate dissociation and then cause wellbore instability and distortion of the data from well logging. Adding nanoparticles into drilling fluid is an effective method in reducing the invasion of drilling fluid and enhancing borehole stability. However, the addition of nanoparticles might also introduce hydrate formation risk in borehole because they can act as the 'seeds' for hydrate nucleation. This paper presents an experimental study of the effect of hydrophilic silica nanoparticle on gas hydrate formation in a dynamic methane/liquid-water system. In the experiment, the ultrapure water with and without1.0 wt%–6.0 wt% concentrations of silica nanoparticles, grain sizes of 20 and 50 nm, were pressurized by methane gas under varied conditions of temperature and pressure. The induction time, the gas consumption, and the average rate of gas consumption in the system were measured and compared to those in ultrapure water. The results show that a concentration of 4.0 wt% hydrophilic SiO_2 particles with a grain size of 50 nm has a relatively strong inhibition effect on hydrate formation when the initial experimental condition is 5.0 °C and 5.0 MPa. Compared to ultrapure water, the hydrophilic nano-SiO_2 fluid increases the induction time for hydrate formation by 194% and decreases the amount and average rate of hydrate formation by 10% and 17%, respectively. This inhibition effect may be attributed to the hydrophilicity,amount and aggregation of silica nanoparticle according to the results of water activity and zeta potential measurements. Our work also elucidates hydrophilic, instead of hydrophobic, nanoparticles can be added to the drilling fluid to maintain wellbore stability and to protect the hydrate reservoir from drilling mud damage, because they exhibit certain degree of hydrate inhibition which can reduce the risk of hydrate reformation and aggregation during gas hydrate or deep water drilling if their concentration can be controlled properly. | Ren Wang Tianle Liu Fulong Ning Wenjia Ou Ling Zhang Zhen Wang Li Peng Jiaxin Sun Zhichao Liu Tianshu Li Huicui Sun Guosheng Jiang | 2019 | Journal of Energy Chemistry2019，28，3： | 12 |
| 2 | Heterostructured graphene quantum dot/WSe2/Si photo-detector with suppressed dark current and improved detectivity显示文摘 | Mengxing Sun Qiyi Fang Dan Xie Yilin Sun Liu Qian Jianlong Xu Peng Xiao Changjiu Teng Weiwei Li Tianling Ren Yanfeng Zhang | 2018 | Nano Research2018，11，6： | 5 |
| 3 | Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film显示文摘Recently,hexagonal boron nitride(h-BN)has become a promising nanophotonic platform for on-chip information devices due to the practicability in generating optically stable,ultra-bright quantum emitters.For an integrated information-processing chip,high optical nonlinearity is indispensable for various fundamental functionalities,such as all-optical modulation,high order harmonic generation,optical switching and so on.Here we study the third-order optical nonlinearity of free-standing h-BN thin films,which is an ideal platform for on-chip integration and device formation without the need of transfer.The films were synthesized by a solution-based method with abundant functional groups enabling high third-order optical nonlinearity.Unlike the highly inert pristine h-BN films synthesized by conventional methods,the free-standing h-BN films could be locally oxidized upon tailored femtosecond laser irradiation,which further enhances the third-order nonlinearity,especially the nonlinear refraction index,by more than 20 times.The combination of the free-standing h-BN films with laser activation and patterning capability establishes a new promising platform for high performance on-chip photonic devices with modifiable optical performance. | Jun Ren Han Lin Xiaorui Zheng Weiwei Lei Dan Liu Tianling Ren Pu Wang Baohua Jia | 2022 | Opto-Electronic Science2022，1，6： | 3 |
| 4 | High-stability electrostatic field micro sensor for sounding thunderstorm applications显示文摘In this paper,the design and experimental results for a novel high-stability sounding electrostatic field micro sensor are presented.By means of hermetic chip sealing,digital weak signal demodulation unit,and probe sensor structure design,harsh environmental adaptation problems such as low temperature,high humidity,low air pressure,waterfall are solved.The sensor has a high resolution of 14 V/m,a wide measurement range of±100 kV/m,and is proved to have superior stability and performance in sounding electric field experiments than traditional sensors under different kinds of weather. | WEN Xiaolong PENG Chunrong FANG Dongming YANG Pengfei REN Tianling XIA Shanhong | 2014 | Instrumentation2014，1，3： | 3 |
| 5 | Silicon-based microelectrode arrays for stimulation and signal recording of in vitro cultured neurons显示文摘Microelectrode arrays (MEAs) for stimulation and signal recording of in vitro cultured neurons are presented.Each MEA is composed of 60 independent electrodes with 59 working ones and one reference one.These electrodes are divided into 30 pairs.Through each pair of electrodes,four independent states can be realized to define the accessing modes of neurons cultured on the surface of the electrodes.A total MEA covers an area of 10 mm×10 mm.MEAs are fabricated in a silicon-based semiconductor process.An implemented MEA is bonded on a specially designed printed-circuit-board (PCB) and surrounded by a culture chamber.An impedance measurement has been made to verify the electrical characteristics of MEAs.The surface was modified to enhance the biocompatibility.A series of PC12 cells culture experiments validates the effectiveness of the modification.An extracellular signal recording experiment with acetylcholine (Ach) as a stimulant has been carried out,and the results show the feasibility of MEAs for extracellular action potential recording.Extracellular electrical stimulation and recording experiments have been carried out too.They indicate that MEAs can be used for extracellular stimulation,recording,simultaneous stimulation and recording,and isolation of PC12 cells network cultured in vitro. | PAN HaiXian LU XiaoYing WANG ZhiGong REN TianLing FANG Tao ZHANG Jie ZHOU ChangJian WANG LiGang | 2011 | Science China(Information Sciences)2011，54，10： | 2 |
| 6 | Monolayer MoS_(2)-based transistors with low contact resistance by inserting ultrathin Al_(2)O_(3)interfacial layer显示文摘Transition metal dichalcogenides(TMDCs)are promising high performance electronic materials due to their interesting semiconductor properties.However,it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges.In this work,the homogeneous monolayer MoS_(2)films with high crystalline quality were prepared by chemical vapor deposition method on SiO2/Si substrates.The back-gate field-effect transistors(FETs)were fabricated by inserting an ultrathin Al_(2)O_(3)interlayer between the metal electrodes and MoS_(2)nanosheets.With the addition of an ultrathin 0.8 nm Al_(2)O_(3)interlayer,the contact resistance decreased dramatically from 59.9 to 1.3 kΩμm and the Schottky barrier height(SBH)dropped from 102 to 27 meV compared with devices without the Al_(2)O_(3)interlayer.At the same time,the switching ratio increased from~106to~108,and both the on-current and field-effect mobility were greatly improved.We find that the ultrathin Al_(2)O_(3)interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface,but also protect the channel materials from the influence of air and moisture as a covering layer.In addition,the lattice and band structures of Al_(2)O_(3)/MoS_(2)film were calculated and analyzed by first-principles calculation.It is found that the total density of states of the Al_(2)O_(3)/MoS_(2)film exhibits interfacial polarized metals property,which proves the higher carrier transport characteristics.FETs with Al_(2)O_(3)interlayers have excellent stability and repeatability,which can provide effective references for future low power and high performance electronic devices. | CHEN Gang LIN Xin LIU Yuan WANG Fang HU Kai SHAN Xin WU ZeYu ZHANG YuPeng NIE WeiCan ZHONG JiXiang REN TianLing ZHANG KaiLiang | 2023 | Science China(Technological Sciences)2023，66，6： | 2 |
| 7 | A novel polishing technology for epoxy resin based on 355 nm UV laser显示文摘The electromagnetic shielding film has drawn much attention due to its wide applications in the integrated circuit package,which demands a high surface quality of epoxy resin.However,gaseous Cu will splash and adhere to epoxy resin surface when the Cu layer in PCB receives enough energy in the process of laser cutting,which has a negative effect on the quality of the shielding film.Laser polishing technology can solve this problem and it can effectively improve the quality of epoxy resin surface.The paper studies the mechanism of Cu powder spraying on the compound surface by 355 nm ultraviolet(UV) laser,including the parameters of laser polishing process and the remains of Cu content on compound surface.The results show that minimal Cu content can be realized with a scanning speed of 700 mm/s,a laser frequency of 50 kHz and the distance between laser focus and product top surface of-1.3 mm.This result is important to obtain an epoxy resin surface with high quality. | Xinling Meng | 2017 | Journal of Semiconductors2017，38，5： | 1 |
| 8 | Modeling and analysis of nano-sized GMRs based on Co,NiFe and Ni materials显示文摘Magnetic simulation method is introduced to analyze giant magnetoresistances(GMRs)in nanoscale for nano-sized biosensors.A spin valve model with special gridding corresponding to the exchange interaction length is proposed to study the influence of easy axes,exchange coefcients,pinning fields and feature widths on magnetization reversals and hysteresis characteristics of nano-sized GMRs with diferent pinned layer and free layer materials of Co,NiFe and Ni.The switching field is found to be almost linear with the pinning field and decrease with the absolute exchange coefcients and the feature widths for the nano-sized GMRs.The increase rate of each depends on the spin valve stacks.Further investigations into variations of the magnetization distribution reveal that the initial magnetization distribution and the magnetization reversal mode depend greatly on easy axes and materials The dependence on easy axes based mainly on the magnetocrystalline anisotropy is illustrated in detail. | YIN Cong JIA Ze MA WeiChao REN TianLing | 2014 | Science China(Information Sciences)2014，57，2： | 1 |
| 9 | Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering显示文摘 | Hao Jin Bin Feng Shurong Dong Changjian Zhou Jian Zhou Yi Yang Tianling Ren Jikui Luo Demiao Wang | 2012 | Journal of Electronic Materials2012，，7： | 1 |
| 10 | Tiny MEMS-Based Pressure Sensors in the Measurement of Intracranial Pressure显示文摘This study presents a tiny pressure sensor which is used to measure the Intracranial Pressure(ICP). The sensor is based on the piezoresistive effect. The piezoresistive pressure sensor is simulated and designed by using nonlinear programming optimizing and Finite Element Analysis(FEA) tools. Two kinds of sensor sizes are designed in the case of childhood and adult. The sensors are fabricated by Microelectro Mechanical Systems(MEMS)process. The test results yield sensitivities of 1.033 10 2mV/kPa for the childhood type detection and 1.257 10 2mV/kPa for the adult detection with sensor chip sizes of 0.40 0.40 mm2and 0.50 0.50 mm2,respectively. A novel method for measuring ICP is proposed because of the tiny sizes. Furthermore,relative errors for sensitivity of pressure sensors are limited within 4.76%. Minimum Detectable Pressure(MDP) reaches 128.4 Pa in average. | Yanhang Zhang Zhaohua Zhang Bo Pang Li Yuan Tianling Ren | 2014 | Tsinghua Science and Technology2014，19，2： | 1 |
| 11 | Micro- Raman spectroscopy measurement of stress in silicon显示文摘 | WU Xiaoming YU Jianyuan REN Tianling | 2007 | Microelect ronies Journal2007，38，1： | 1 |
| 12 | A power manager system with 78% efficiency for high-voltage triboelectric nanogenerators显示文摘Dear editor,The Internet of Things(Io T)refers to a growing trend to create relatively simple devices that interconnect and share data independent of computers or human intervention[1].In these applications,a continuous power supply system is necessary.There are many research studies that focus on environmental energy for self-powered portable electronics,which can minimize battery consumption and extend cell life.This is the | Lichuan LUO Dechun BAO Wuqi YU Zhaohua ZHANG Tianling REN | 2017 | Science China(Information Sciences)2017，60，2： | 0 |
| 13 | A novel interface circuit for triboelectric nanogenerator显示文摘For most triboelectric nanogenerators(TENGs),the electric output should be a short AC pulse,which has the common characteristic of high voltage but low current.Thus it is necessary to convert the AC to DC and store the electric energy before driving conventional electronics.The traditional AC voltage regulator circuit which commonly consists of transformer,rectifier bridge,filter capacitor,and voltage regulator diode is not suitable for the TENG because the transformer's consumption of power is appreciable if the TENG output is small.This article describes an innovative design of an interface circuit for a triboelectric nanogenerator that is transformerless and easily integrated.The circuit consists of large-capacity electrolytic capacitors that can realize to intermittently charge lithium-ion batteries and the control section contains the charging chip,the rectifying circuit,a comparator chip and switch chip.More important,the whole interface circuit is completely self-powered and self-controlled.Meanwhile,the chip is widely used in the circuit,so it is convenient to integrate into PCB.In short,this work presents a novel interface circuit for TENGs and makes progress to the practical application and industrialization of nanogenerators. | Wuqi Yu Jiahao Ma Zhaohua Zhang Tianling Ren | 2017 | Journal of Semiconductors2017，38，10： | 0 |
| 14 | Evolution of resistive switching polarity in Au/Ar^+ bombarded SrTi_(0.993)Nb_(0.007)O_3/In sandwiches显示文摘We investigated the resistive switching characteristics of Au/Ar+bombarded SrTi 0.993 Nb0.007O3/In sandwiches.The evolution of the resistive switching polarity with sweeping voltage was observed.Our experiments showed that under a macroscopic electrode the homogeneous trapping-detrapping-type conduction and filament-type conduction coexist and compete with each other.For a large sweeping voltage range,the trapping-detrapping-type conduction dominates.However,for a small range the latter dominates. If the bias voltage is too large,the filament conduction could be destroyed.These results will help deepen the understanding of the resistive switching polarity,and will aid in future device design. | XIE GuanLin WANG YuHang REN TianLing ZHU JiaLin SUN JiaLin ZHANG LiuWan | 2012 | Chinese Science Bulletin2012，57，1： | 0 |
| 15 | ATOMIC LAYER DEPOSITION HfO_(2)FILM USED AS BUFFER LAYER OF THE Pt/(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)/HfO_(2)/Si CAPACITORS FOR FeFET APPLICATION显示文摘Neodymium and manganese doped BiFeO_(3)-(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)(BNFMO)ferro-electric film and HfO_(2)layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition(ALD)method,respectively.Metal ferroelectric-insulator-semiconductor(MFIS)capacitors with 200 nm thick BNFMO and 5 nm thick HfO_(2)layer on silicon substrate have been prepared and characterized.It is found that there is no distinct interdifusion and reaction occurring at the interface between BNFMO/HfO_(2)and HfO_(2)/Si.The capacitance-voltage(C-V)and leakage current properties of Pt/HfO_(2)/Si capacitors with different HfO_(2)thickness were studied.The MFIS structure showed clockwise C-V hysteresis loops due to the ferroelectric polarization of BNFMO.The maximum memory window is 5 V.The.leakage current of the Pt/BNFMO/HfO_(2)/Si capacitor was about 2.1×10^(-6)A/cm^(2)at an applied voltage of 4V. | DAN XIE TINGTING FENG YAFENG LUO XUEGUANG HAN TIANLING REN MARKUS BOSUND SHUO LI VELI-MATTI AIRAKSINEN HARRI LIPSANEN SEPPO HONKANEN | 2011 | Journal of Advanced Dielectrics2011，1，3： | 0 |
| 16 | Barium Titanate Prepared by Stearic Acid-Gel Method显示文摘Stearic acid-gel method was used to prepare barium titanate.All the samples show a cubic perovskite structure and thus no ferroelectricity is detected at room temperature.X-ray diffraction reveals that the grains can hardly grow even firing at high temperature so that the grain size in most of the samples is below the ferroelectric critical size.A tentative explanation is proposed of the peculiarities based on the nonstoichiometry at the surface layer. | REN Tianling ZHANG Peilin WANG Yuguo ZHONG Weilie WANG Xiaohui XU Baokun | 1994 | Chinese Physics Letters1994，11，5： | 0 |
| 17 | Sludge composition and characteristics shaped microbial community and further determined process performance: A study on full-scale thermal hydrolysis-anaerobic digestion processes显示文摘Anaerobic digestion (AD) with thermal hydrolysis (TH) pretreatment is a promising process for excess sludge treatment,while there lacks of the knowledge from full-scale process about the impact of sludge composition and characteristics on microbial community and performance.The sludge physiochemical indices,microbial community and performance data of four full-scale TH-AD plants were characterized,and their relationships was elucidated.The four plants were operated under almost similar total organic loading rate (OLR)but their methanogenesis performance differentiate into two groups,namely superior group(SupG) and the inferior group (Inf G).In both groups,TH effectively solubilized particulate organic compounds,meanwhile raised the ammonia nitrogen (NH_(4)^(+)-N) and volatile fatty acid (VFA) concentration.Compared with the Sup G,thermal hydrolyzed sludge of Inf G had higher level of VFAs,NH_(4)^(+)-N and total chemical oxygen demand (t COD),which showed higher inhibition effect on microbes,leading to a community with lower diversity,lower abundance of carbohydrate degrading functional guild,higher protein degrading one,and methanogens that adapted to limited substrates,and further declined the methane production rate.Thus,it was recommended that OLR alone was not sufficient for controlling the system in design and operation,the concentration of VFAs,NH_(4)^(+)-N and t COD should be equally considered.Their higher concentration,together with the higher abundance of Defluviitoga and Proteiniphilum were recommended as indicators for inferior running condition.Our results proposed that microbial communities played a role of bridge between environmental factors and performance,provided implications for engineering ecology and operational regulation for full-scale sludge TH-AD process. | Wei Liu Chenxiang Sun Wei Li Tianle Li Zhan Chen Jiawei Wang Zhengran Ren Xianghua Wen | 2024 | Journal of Environmental Sciences2024，，3： | 0 |
| 18 | Simulation of MoS_(2)stacked nanosheet field effect transistor显示文摘Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties.Vertical stacked nanosheet FET(NSFET)based on MoS_(2)are proposed and studied by Poisson equation solver coupled with semiclassical quantum correction model implemented in Sentaurus workbench.It is found that,the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering,due to the excellent electrostatics of 2D MoS_(2).In addition,small-signal capacitance is extracted and analyzed.The MoS_(2)based NSFET shows great potential to enable next generation electronics. | Yang Shen He Tian Tianling Ren | 2022 | Journal of Semiconductors2022，43，8： | 0 |
| 19 | Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor显示文摘Surface acoustic wave(SAW)resonators with an ultrahigh Q-factor are designed and fabricated on silicon-based gallium nitride(GaN/Si).The temperature-dependent performance is characterized over a wide range,from 10 to 500 K.Finite element analysis is employed to guide the design of the SAW resonator from indications of the Rayleigh mode and weak propagation direction dependence of SAW in the c-plane of GaN/Si.The SAW resonator with 100 pairs of interdigital transducers(IDT),100 pairs of grating reflectors(GR)for each side,aperture size of 80μm,metallization ratio of 0.5,and electrode width of 500 nm resonates at 1.9133 GHz accordingly with an ultrahigh Q-factor of 7622 at room temperature,which contributes the f_(r)×Q_(r),up to 14.583×10^(12)Hz.A resonator operating over 10 to 500 K indicates an approximately linear decreasing temperature dependence above 280 K while being approximately constant below 40 K.The fitting to resonator characteristics using the modified Butterworth Van Dyke(mBVD)model reveals a reduction in both the electrode and mechanical losses while worsening the dielectric loss with cooling down. | Guofang YU Renrong LIANG Haiming ZHAO Lei XIAO Jie CUI Yue ZHAO Wenpu CUI Jing WANG Jun XU Jun FU Tianling REN | 2024 | Science China(Information Sciences)2024，67，2： | 0 |
| 20 | A power management circuit with 50%efficiency and large load capacity for tribo-electric nanogenerator显示文摘Recently, triboelectric nanogenerators(TENGs), as a collection technology with characteristics of high reliability, high energy density and low cost, has attracted more and more attention. However, the energy coming from TENGs needs to be stored in a storage unit effectively due to its unstable ac output. The traditional energy storage circuit has an extremely low energy storage efficiency for TENGs because of their high internal impedance.This paper presents a new power management circuit used to optimize the energy using efficiency of TENGs, and realize large load capacity. The power management circuit mainly includes rectification storage circuit and DC–DC management circuit. A rotating TENG with maximal energy output of 106 m W at 170 rpm based on PCB is used for the experimental verification. Experimental results show that the power energy transforming to the storage capacitor reach up to 53 m W and the energy using efficiency is calculated as 50%. When different loading resistances range from 0.82 to 34.5 k are connected to the storage capacitor in parallel, the power energy stored in the storage capacitor is all about 52.5 m W. Getting through the circuit, the power energy coming from the TENGs can be used to drive numerous conventional electronics, such as wearable watches. | Dechun Bao Lichuan Luo Zhaohua Zhang Tianling Ren Tianling RenTianling Ren | 2017 | Journal of Semiconductors2017，38，9： | 0 |
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