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23篇 您的检索式：作者名="Redwing"

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	题名	作者	年代	出处	被引量
1	Model development of GaN MOVPE growth chemistry for reactor design显示文摘	Jingxi Sun J. M. Redwing T. F. Kuech	2000	Journal of Electronic Materials2000，，1：	1
2	Model Development of GaN MOVPE Growth Chemistry for Reactor Design 显示文摘	Sun J X Redwing J M Kuech T F	2000	Journal of EelctronicC Materials2000，29，1：	1
3	显示文摘	Srinivasan Raghavan Joan M Redwing	2005	Journal of Applied Physics2005，，：	1
4	Growth Characteristics of Silicon Nanowires Synthesized by Vapor-Liquid-Solid Growth in Nanoporous Alumina Templates显示文摘	Redwing J M	2003	J Cryst Growth2003，254，：	1
5	Thick- ness Dependence of Critical Current Density in MgB2 Films Fabricated by ex situ Annealing of CVD-Grown B Films in Mg Vapor显示文摘	Hanna Mina Wang Shufang Redwing Joan M	2009	Supercond Sci Technol2009，22，01：	1
6	Microwave noise performance of AlGaN/GaN HEMTs 显示文摘	PING A T PINER E REDWING J	2000	Electronics Letters2000，36，2：	1
7	MOVPE growth of high electron mobility A1GaN/GaN hererostructures 显示文摘	REDWING J M FLYNN J S TISCHLER M A	1996	Mat Res Soc Symp Proc1996，395，：	1
8	An optically pumped GaN-AlGaN vertical cavity surface emitting laser 显示文摘	Redwing J M	1996	Appl Phys Lett1996，69，：	1
9	Crystallographic wet chemical etching of GaN 显示文摘	STOCKER D A SCHUBERT E F REDWING J M	1998	Appl PhysLett1998，73，18：	1
10	Bierystalline silicon nanowires 显示文摘	CARIM A H LEW K K REDWING J M	2001	Adv Mater2001，13，19：	1
11	Carbon-doped MgB2 thin films grown by hybrid physical-chemical vapor deposition显示文摘	Pogrebnyakov A V Redwing J M Giencke J E	2005	IEEE Trans Appl Supercond2005，15，2：	1
12	An optically pumped GaN-AIGaN vertical cavity surface emitting laser显示文摘	Redwing J M Loeber D A S Anderson N G	1996	Appl Phys Lett1996，69，：	1
13	In situ stress measure- ments during the MOCVD growth of A1N buffer lay- ers on ( 1 1 1 ) Si substrates显示文摘	Raghavan S Redwing J M	2004	Journal of Crystal Growth2004，261，23：	1
14	In vivo and in vitro swelling of cell walls during fruit ripening 显示文摘	REDWELI R J MACRAE E HALLENT I	1997	Plant1997，203，2：	1
15	Model development of GaN MOVPE growth chemistry for reactor design 显示文摘	Sun Jingxi Redwing J M Kuech T F	2000	J Electron Mater2000，29，1：	1
16	crystallographic wet chemical etching of GaN 显示文摘	Stocker D A Schubert E F Redwing J M	1998	Appl Phys Lett1998，73，18：	1
17	Two-dimensional electron gas properties of Al Ga N/Ga N heterostructures grown on 6H-Si C and sapphire substrates显示文摘	REDWING J M TISCHLER M A FLYNM J S	1996	Appl Phys Lett1996，69，7：	1
18	显示文摘	Redwing J M Kuech T F Gordon D C	1994	J Appl Phys1994，76，3：	1
19	Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates显示文摘	Kok-Keong Lew Joan M Redwing	2003	Journal of Crystal Growth2003，254，：	1
20	Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor depo- sition显示文摘	Pogrebnyakov A V Jones J E Redwing J M	2003	ApplPhys Lett2003，82，：	1

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