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| 1 | A new cell death program regulated by toll-like receptor 9 through p38 mitogen-activated protein kinase signaling pathway in a neonatal rat model with sepsis associated encephalopathy显示文摘Background:Sepsis,a serious condition with high mortality,usually causes sepsis associated encephalopathy(SAE)that involves neuronal cell death.However,the cell death programs involved and their underlying mechanisms are not clear.This study aimed to explore the regulatory mechanisms of different cell death programs in SAE.Methods:A neonatal rat model of SAE was established by cecal ligation and perforation.Survival rate and vital signs(mean arterial pressure and heart rate)were monitored,nerve reflexes were evaluated,and cortical pathological changes were observed by hematoxylin and eosin staining.The expression of pyroptosis,apoptosis,and necroptosis(PANoptosis)-related proteins,mitogen-activated protein kinase(MAPK),and its upstream regulator toll-like receptor 9(TLR9)were detected.The expression of TLR9 in neurons was observed by immunofluorescence staining.The ultrastructure of neurons was observed by transmission electron microscope.Results:First,PANoptosis was found in cortical nerve cells of the SAE rats.Meanwhile,the subunits of MAPKs,p38 MAPK,Jun N-terminal kinase,and extracellular signal-regulated kinase(ERK)were activated.After pharmacologically inhibiting each of the subunits,only p38 MAPK was found to be associated with PANoptosis.Furthermore,blocking the p38 MAPK signaling pathway activated necroptosis but inhibited apoptosis and pyroptosis.When necroptosis was pharmacologically inhibited,apoptosis and pyroptosis were reactivated.Finally,we found that the expression of TLR9,a regulator of MAPKs,was significantly increased in this model.After down-regulation of TLR9,p38 MAPK,and ERK signaling pathways were inhibited,which led to the inhibition of PANoptosis.Further analysis found that down-regulation of TLR9 improved the survival rate and reduced the pathological changes in SAE rats.Conclusions:Our study showed that the programs comprising PANoptosis are activated simultaneously in SAE rats.TLR9 activated PANoptosis through the p38 MAPK signaling pathway.TLR9 may work as a potential target for SAE treatment. | Ruixi Zhou Junjie Ying Xia Qiu Luting Yu Yan Yue Qian Liu Jing Shi Xihong Li Yi Qu Dezhi Mu | 2022 | Chinese Medical Journal2022，，12： | 3 |
| 2 | Towards growth of pure AB-stacked bilayer graphene single crystals显示文摘Given its intriguing band structure and unique tunable bandgap,AB-stacked bilayer graphene has great potentials in the applications of high-end electronics,optoelectronics and semiconductors.The epitaxial growth of AB-stacked single-crystal bilayer graphene films requires a strict AB-stacked lattice,identical orientations and seamless stitching of bilayer graphene islands.However,the particles inevitably present on the metal surface that produced during high temperature growth would induce random orientations,twisted stacking islands,and uncontrollable multilayers,which is a great challenge to overcome.Here,we propose a heat-resisting-box assisted strategy to produce nearly pure AB-stacked bilayer graphene single-crystal films on Cu/Ni(111)foils.With our technique,the particles on the Cu/Ni(111)surface are effectively eliminated,which greatly minimizes the occurrence of randomly twisted islands and uncontrollable multilayers.The as-grown AB-stacked bilayer graphene films show>99%alignment and>99%AB stacking order.Our work provides a promising method towards the growth of pure AB-stacked bilayer graphene single crystals and would accelerate its device applications. | Xiaowen Zhang Tao Zhou Yunlong Ren Zuo Feng Ruixi Qiao Qinghe Wang Bin Wang Jinxia Bai Muhong Wu Zhilie Tang Xu Zhou Kaihui Liu Xiaozhi Xu | 2024 | Nano Research2024，17，5： | 0 |
| 3 | A Hf_(0.5)Zr_(0.5)O_(2)ferroelectric capacitor-based half-destructive read scheme for computing-in-memory显示文摘The emerging non-volatile memories(NVMs),including resistive random access memory(RRAM)[1],phase-change memory(PCM)[2],and ferroelectric random access memory(Fe RAM)[3],have broad application prospects owing to their non-volatility and near-zero static energy consumption.Compared to other NVMs,ferroelectric capacitors(Fe CAPs)ofer advantages in energy consumption and endurance.However,the destructive read operation of capacitors(e.g.,DRAMs and Fe CAPs)destroys the stored data. | Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV | 2023 | Science China(Information Sciences)2023，66，5： | 0 |
| 4 | Towards intrinsically pure graphene grown on copper显示文摘The state-of-the-art semiconductor industry is built on the successful production of silicon ingot with extreme purity as high as 99.999999999%,or the so-called'eleven nines'.The coming high-end applications of graphene in electronics and optoelectronics will inevitably need defect-free pure graphene as well.Due to its two-dimensional(2D)characteristics,graphene restricts all the defects on its surface and has the opportunity to eliminate all kinds of defects,i.e.,line defects at grain boundaries and point or dot defects in grains,and produce intrinsically pure graphene.In the past decade,epitaxy growth has been adopted to grow graphene by seamlessly stitching of aligned grains and the line defects at grain boundaries were eliminated finally.However,as for the equally common dot and point defects in graphene grain,there are rare ways to detect or reduce them with high throughput and efficiency.Here,we report a methodology to realize the production of ultrapure graphene grown on copper by eliminating both the dot and point defects in graphene grains.The dot defects,proved to be caused by the silica particles shedding from quartz tube during the high-temperature growth,were excluded by a designed heat-resisting box to prevent the deposition of particles on the copper surface.The point defects were optically visualized by a mild-oxidation-assisted method and further reduced by etching-regrowth process to an ultralow level of less than 1/1,000 μm^(2).Our work points out an avenue for the production of intrinsically pure graphene and thus lays the foundation for the large-scale graphene applications at the integrated-circuit level. | Xiaozhi Xu Ruixi Qiao Zhihua Liang Zhihong Zhang Ran Wang Fankai Zeng Guoliang Cui Xiaowen Zhang Dingxin Zou Yi Guo Can Liu Ying Fu Xu Zhou Muhong Wu Zhujun Wang Yue Zhao Enke Wang Zhilie Tang Dapeng Yu Kaihui Liu | 2022 | Nano Research2022，15，2： | 0 |
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