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		题名	作者	年代	出处	被引量
	1	Mixed Lineage Kinase Domain-like Protein Mediates Necrosis Signaling Downstream of RIP3 Kinase显示文摘	Liming Sun Huayi Wang Zhigao Wang Sudan He She Chen Daohong Liao Lai Wang Jiacong Yan Weilong Liu Xiaoguang Lei Xiaodong Wang	2012	Cell2012，，1：	2
	2	All-optical switching effect in PVK-based optoelectronic composites 显示文摘	WU Shuizhu LU Ming SHE Weilong	2004	Materials Chemistry and Physics2004，83，：	1
	3	Mixed Lineage Kinase Domain-like Protein Mediates Necrosis Signaling Downstream of RIP3 Kinase显示文摘	Liming Sun Huayi Wang Zhigao Wang Sudan He She Chen Daohong Liao Lai Wang Jiacong Yan Weilong Liu Xiaoguang Lei Xiaodong Wang	2012	Cell2012，，1：	1
	4	All-optical switching properties of poly(methyl methyacrylate) azobenzene composites显示文摘	Shuizhu Wu Shenglan Yao Weilong She Duanbin Luo Hai Wang	2003	Journal of Materials Science2003，，3：	1
	5	Wave coupling theory of Quasi-phase-Matched linear electro-optic effect显示文摘	ZHENG Guo-liang WANG Hong-cheng SHE Weilong	2006	Optics Express2006，14，12：	1
	6	Electrically controlled transfer of spin angular momentum of light in an optically active medium显示文摘	Lixiang Chen Guoliang Zheng Jie Xu Bingzhi Zhang and Weilong She	2006	Optics Letters2006，，3：	1
	7	TRANSIENT PHOTOLUMINESCENCE SPECTRA OF GaAs/AlGaAs QUANTUM WELLS, QUANTUM WELL WIRES, AND QUANTUM WELL BOXES显示文摘The interaction of the electrons with the phonons in GaAs/AlGaAs quantum wells,quantum well wires,and quantum well boxes has been studied by meansuring their time resolved photoluminescence(PL)spectra.In the quantum well(Q W)system,relaxation time of the electron energy of the narrower well is shorter than that of the wider well.It is attributed to the stronger interaction of the electrons with the interface mode phonons.In the Q W wires and Q W boxes,the shortening of the relaxation time is obvious.It is due to the stronger electron-phonon interaction caused by the reduction of screening effect.Our experiments also demonstrated the incident laser intensity dependence of the relaxation time.	CHENG Wenqin HUANG Yi ZHOU Junming FENG Wei WANG Hezhou SHE Weilong HUANG Xuguang LIN Weizhu YU Zhenxin XU Geng	1990	Chinese Physics Letters1990，7，6：	0
	8	Power Dependence of the Recombination Processes in the In_(x)Ga_(1-x)As/GaAs Single Quantum Well显示文摘We have measured the power dependence of the photoluminesence spectra from a set of strained In_(x)Ga_(1-x)As/GaAs single quantum wells.The result shows that the excitation power has important effect on the carrier recombination processes.When the power increases from 0.5 to 14mW,the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases.At high excitation level,the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level,while it only doubles for the well.	QIAN Shixiong WU Jianyao YUAN Shu LI Yufen Thorwald G.Andersson CHEN Zonggui PENG Wenji SHE Weilong YU Zhenxin	1991	Chinese Physics Letters1991，8，8：	0

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