| 2 | Investigation on LaF_3/porous silicon system for photonic application显示文摘We present the investigation on LaF_3/porous silicon(PS) system that has properties of both the materials to be applied in photonics.Epilayers of LaF_3 are grown on PS under different anodization conditions using electron-beam evaporation(EBE).The characteristics of the LaF_3/PS system are analyzed by X-ray diffraction(XRD),scanning electron microscope(SEM),energy dispersive X-ray spectroscopy(EDX),and photoluminescence(PL).XRD confirms the polycrystalline nature of the LaF_3 film.Nearly stoichiometric growth of LaF_3 on PS is established by EDX.Such a thin LaF_3 layer grown on PS leads to a good enhancement of PL yield of PS.But with the increasing thickness of LaF_3 layer,PL intensity of PS is found to decrease along with a small blue-shift. | Halima Khatun Sinthia Shabnam Mou Abdul Al Mortuza Abu Bakar Md.Ismail | 2010 | Chinese Optics Letters2010，8，3： | 1 |
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