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您的检索式：作者名="Xuanze Zhou"
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| 1 | Vertical β-Ga_(2)O_(3) power electronics显示文摘β-Ga_(2)O_(3) possesses a highly promising critical electric field of 8 MV/cm,allowing devices with improved perfor-mance compared with other wide bandgap materials[1,2].The 4-inch wafers grown from a melt and over 10μm of the epitax-ial layers grown by Halide vapor phase epitaxy(HVPE)with highly controllable doping concentration,are commercially available,paving the way of vertical power devices.Theβ-Ga_(2)O_(3) community has consistently elevated the average criti-cal electric field superior to SiC or GaN,which is suitable for medium/high voltage infrastructures demanding over 900 V[1].Verticalβ-Ga_(2)O_(3) power electronics have made a tremendous progress in recent years,such as various surface/interface engineering,diverse edge termination,quasi-inversion vertical transistor,etc. | Guangwei Xu Feihong Wu Qi Liu Zhao Han Weibing Hao Jinbo Zhou Xuanze Zhou Shu Yang Shibing Long | 2023 | Journal of Semiconductors2023，44，7： | 0 |
| 2 | Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate FETs under negative bias stress显示文摘A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are identified.At low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,respectively.At higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively shifted.This is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing SCR.This provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications. | Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo | 2023 | Journal of Semiconductors2023，44，7： | 0 |
| 3 | A large-area multi-fingerβ-Ga_(2)O_(3) MOSFET and its self-heating effect显示文摘The self-heating effect severely limits device performance and reliability.Although some studies have revealed the heat distribution ofβ-Ga_(2)O_(3) MOSFETs under biases,those devices all have small areas and have difficulty reflecting practical con-ditions.This work demonstrated a multi-fingerβ-Ga_(2)O_(3) MOSFET with a maximum drain current of 0.5 A.Electrical characteris-tics were measured,and the heat dissipation of the device was investigated through infrared images.The relationship between device temperature and time/bias is analyzed. | Xuanze Zhou Guangwei Xu Shibing Long | 2023 | Journal of Semiconductors2023，44，7： | 0 |
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