| 5 | P-doped Germanium Nanowires with Fanobroadening in Raman Spectrum显示文摘The optimized growth conditions for high density germanium(Ge) nanowires and P-doped Ge nanowires on Si(111) substrate were investigated,the phosphorus(P)-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition(VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH_4 as precursor and PH_3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy(SEM),the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm^(-1)) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm^(-1),respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH_3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃. | 何亮 xiong biao zhou peng luo wen song peishuai wang xukun hao zhimeng yang xiao niu chaojiang tian xiaocong yan mengyu 麦立强 | 2016 | Journal of Wuhan University of Technology(Materials Science)2016，31，1： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员