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| 1 | Synergistically Toughening Effect of SiC Whiskers and Nanoparticles in Al_2O_3-based Composite Ceramic Cutting Tool Material显示文摘In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al_2O_3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent performance in improving the material properties. While no attempts have been made to add SiC whiskers and SiC nanoparticles together into the ceramic matrix and the synergistically toughening effects of them have not been studied. An Al_2O_3-SiC_w-SiC_(np) advanced ceramic cutting tool material is fabricated by adding both one-dimensional SiC whiskers and zero-dimensional SiC nanoparticles into the Al_2O_3 matrix with an effective dispersing and mixing process. The composites with 25 vol% SiC whiskers and 25 vol% SiC nanoparticles alone are also investegated for comparison purposes. Results show that the Al_2O_3-SiC_w-SiC_(np) composite with both 20 vol% SiC whiskers and 5 vol% SiC nanoparticles additives have much improved mechanical properties. The flexural strength of Al_2O_3-SiC_w-SiC_(np) is 730±95 MPa and fracture toughness is 5.6±0.6 MPa·m^(1/2). The toughening and strengthening mechanisms of SiC whiskers and nanoparticles are studied when they are added either individually or in combination. It is indicated that when SiC whiskers and nanoparticles are added together, the grains are further refined and homogenized, so that the microstructure and fracture mode ratio is modified. The SiC nanoparticles are found helpful to enhance the toughening effects of the SiC whiskers. The proposed research helps to enrich the types of ceramic cutting tool and is benefit to expand the application range of ceramic cutting tool. | LIU Xuefei LIU Hanlian HUANG Chuanzhen WANG Limei ZOU Bin ZHAO Bin | 2016 | Chinese Journal of Mechanical Engineering2016，29，5： | 3 |
| 2 | Simulation of growing GaN in vertical HVPE reactor显示文摘The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on the deposition of GaN is discussed, too. It is found that the angle between the direction of gravity and the direction of GaCl flow inlet has a major effect on the deposition rate and the uniformity of the growth. Compared with the situation when the direction of gravity is the same with the direction of GaCl flow inlet, although the deposition rate of GaN has decreased obviously, the uniformity of the deposition has improved largely when the direction of gravity is opposite to the direction of GaCl flow inlet. | ZHAO ChuanZhen, XIU XiangQian , ZHANG Rong , XIE ZiLi, LIU Bin, LIU ZhanHui, YAN HuaiYue & ZHENG YouDou Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，1： | 3 |
| 3 | Study on in-situ synthesis of ZrB 2 whiskers in ZrB 2 –ZrC matrix powder for ceramic cutting tools显示文摘 | Liang Xu Chuanzhen Huang Hanlian Liu Bin Zou Hongtao Zhu Guolong Zhao Jun Wang | 2012 | International Journal of Refractory Metals and Hard Materials2012，，： | 1 |
| 4 | Technological parameters evaluation of gas quenching based on the finite element method显示文摘 | H uiping Li Guoqun Zhao Chuanzhen H uang | | 0，，04： | 1 |
| 5 | The temperature dependence of optical properties of InGaN alloys显示文摘In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper. | ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 6 | A modified simplified coherent potential approximation model of band gap energy of III-V ternary alloys显示文摘Based on the modification of the simplified coherent potential approximation(SCPA),a model is developed to calculate the composition dependence of the band gap energy of III-V ternary alloys with the same anion.The derived equation is used to fit the experimental band gap energy of In x Al 1 x N,In x Ga 1 x N and Al x Ga 1 x N with x from 0 to 1.It is found that the fitting results are better than those done by using SCPA.The fitting results are also better than those obtained by using the formula with a small bowing coefficient,especially for In x Al 1 x N.In addition,our model can also be used to describe the composition dependence of band gap energy of other III-V ternary alloys. | Zhao ChuanZhen Zhang Rong Liu Bin Fu DeYi Li Ming Xiu XiangQian Xie ZiLi Zheng YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 7 | Technological pa- rameters evaluation of gas quenching based on the finite element method显示文摘 | Huiping Li Guoqun Zhao Chuanzhen Huang | 2007 | Computational Materials Science2007，38，4： | 1 |
| 8 | The parameters in the band-anticrossing model for In_xGa_(1-x)N_yP_(1-y) before and after annealing显示文摘We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters. | ZHAO ChuanZhen ZHANG Rong LIU Bin YU LiYuan TANG ChunXiao XIE ZiLi XIU XiangQian ZHENG YouDou | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，12： | 1 |
| 9 | An analysis of unsteady thermal stresses in a functionally gradient ceramic plate with symmetrical structure显示文摘 | ZHAO Jun AI Xing HUANG Chuanzhen | 2003 | Ceramics International2003，29，11： | 1 |
| 10 | Development of an advanced ceramic tool material-functionally gradient cutting ceramics 显示文摘 | AI Xin ZHAO Jun HUANG Chuanzhen | 1998 | Mater Sci Eng A1998，248，12： | 1 |
| 11 | Development of an advanced ceramic tool materialfunctionally gradient cutting ceramics显示文摘 | AI Xing ZHAO Jun HUANG Chuanzhen | 1998 | Materials Science and Engineering A1998，248，12： | 1 |
| 12 | Mechanical properties and microstructure of TiB 2 –TiC composite ceramic cutting tool material显示文摘 | Bin Zou Chuanzhen Huang Jinpeng Song Ziye Liu Lin Liu Yan Zhao | 2012 | International Journal of Refractory Metals and Hard Materials2012，，： | 1 |
| 13 | A model for thermal annealing on forming In—N clusters in InGaNP显示文摘We develop a model for the effect of thermal annealing on forming In-N clusters in GaInNP according to thermodynamics.The average energy variation for forming an In-N bond in the model is estimated according to the theoretical calculation.Using the model,the added number of In-N bonds per mol of InGaNP,the added number of nearest-neighbor In atoms per N atom and the average number of nearest-neighbor In atoms per N atom after annealing are calculated.The different function of In-N clusters in InGaNP and InGaN is also discussed,which is due to the different environments around the In-N clusters. | ZHAO ChuanZhen CHEN Lei LI NaNa ZHANG HuanHuan CHEN YaFei WEI Tong TANG ChunXiao XIE ZiLi | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，5： | 0 |
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