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| 1 | Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy显示文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials. | FANG HeNan ZHANG Rong LIU Bin LI YeCao FU DeYi LI Yi XIE ZiLi ZHUANG Zhe ZHENG YouDou WU JingBo JIN BiaoBing CHEN Jian WU PeiHeng | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，11： | 6 |
| 2 | Genetic and Molecular Characterization of H9N2 Avian Influenza Viruses Isolated from Live Poultry Markets in Hubei Province, Central China, 2013–2017显示文摘H9N2 subtype avian influenza virus(AIV)is an influenza A virus that is widely spread throughout Asia,where it jeopardizes the poultry industry and provides genetic material for emerging human pathogens.To better understand the epidemicity and genetics of H9 subtype AIVs,we conducted active surveillance in live poultry markets(LPMs)in Hubei Province from 2013 to 2017.A total of 4798 samples were collected from apparent healthy poultry and environment.Realtime RT-PCR revealed that the positivity rate of influenza A was 26.6%(1275/4798),of which the H9 subtype accounted for 50.3%(641/1275)of the positive samples.Of the 132 H9N2 viral strains isolated,48 representative strains were subjected to evolutionary analysis and genotyping.Phylogenetic analysis revealed that all H9N2 viral genes had 91.1%–100%nucleotide homology,clustered with genotype 57,and had high homology with human H9N2 viruses isolated from2013 to 2017 in China.Using a nucleotide divergence cutoff of 95%,we identified ten distinct H9N2 genotypes that continued to change over time.Molecular analysis demonstrated that six H9N2 isolates had additional potential glycosylation sites at position 218 in the hemagglutinin protein,and all isolates had I155 T and Q226 L mutations.Moreover,44 strains had A558 V mutations in the PB2 protein and four had E627 V mutations,along with H9N2 human infection strains A/Beijing/1/2016 and A/Beijing/1/2017.These results emphasize that the H9N2 influenza virus in Hubei continues to mutate and undergo mammalian adaptation changes,indicating the necessity of strengthening the surveillance of the AIV H9N2 subtype in LPMs. | Zhibin Hu Fuhu Peng Zhenghui Xiong Wanpo Zhang Tingting Li Yuejun Shi Jun Xie Xin Jin Jingjing Huang Hongde Xiao Dingren Bi Nianhua Song Zili Li | 2021 | Virologica Sinica2021，36，2： | 4 |
| 3 | Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays显示文摘Solar-blind ultraviolet(UV)photodetectors(PDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.As a representative Ill-nitride material,AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties,such as tunable wide bandgaps for intrinsic UV detection.In recent decades,a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection.As integrated optoelectronic technology advances,AlGaN-based focal plane arrays(FPAs)are manufactured and exhibit outsta nding solar-blind imaging capability.Con sidering the rapid development of AlGaN detection techniques,this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs.First,the basic physical properties of AlGaN are presented.The epitaxy and p-type doping problems of AlGaN alloys are then discussed.Diverse PDs,including photoconductors and Schottky,metal-semiconductor-metal(MSM),p-i-n,and avalanche photodiodes(APDs),are dem on strated,and the physical mechanisms are analyzed to improve device performance.Additionally,this paper summarizes imaging technologies used with AlGaN FPAs in recent years.Benefit!ng from the development of AlGaN materials and optoelectronic devices,solar-blind UV detection technology is greeted with significant revolutions. | Qing Cai Haifan You Hui Guo Jin Wang Bin Liu Zili Xie Dunjun Chen Hai Lu Youdou Zheng Rong Zhang | 2021 | Light(Science & Applications)2021，10，6： | 4 |
| 4 | Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction显示文摘High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities are revealed by the technique of X-ray dffraction (XRD). Lattice constants calculated from the omega/2theta scan are c=0.5185 nm and a=0.3157 nm. Also, the in-plane strain is -1.003%, while out of the plane, the epitaxial film is almost relaxed. Several methods are used to deduce the mosaicity and dislocation density of GaN, showing that the edge type dislocations are the overwhelming majority. | XIE ZiLi 1,2,3, ZHOU YuanJun 1 , SONG LiHong 1,2 , LIU Bin 1 , HUA XueMei 1,2 , Xiu XiangQian 1 , ZHANG Rong 1,2,3 & ZHENG YouDou 1,2,3 1 JiangSu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, China 2 Nanjing National Laboratory of Microstructures, Nanjing 210093, China 3 NJU-Yangzhou Institute of Opto-electronics, Yangzhou, 225001, China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，1： | 3 |
| 5 | Simulation of growing GaN in vertical HVPE reactor显示文摘The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on the deposition of GaN is discussed, too. It is found that the angle between the direction of gravity and the direction of GaCl flow inlet has a major effect on the deposition rate and the uniformity of the growth. Compared with the situation when the direction of gravity is the same with the direction of GaCl flow inlet, although the deposition rate of GaN has decreased obviously, the uniformity of the deposition has improved largely when the direction of gravity is opposite to the direction of GaCl flow inlet. | ZHAO ChuanZhen, XIU XiangQian , ZHANG Rong , XIE ZiLi, LIU Bin, LIU ZhanHui, YAN HuaiYue & ZHENG YouDou Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，1： | 3 |
| 6 | Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer显示文摘Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is found that the densities of screw and edge threading dislocations increase with the V/III ratio of the buffer layer,and the intensities of the yellow luminescence(YL) and blue luminescence(BL) emissions also increase dramatically.However,the density ratio of the edge threading dislocation to the screw threading dislocation remains invariant,as well as the intensity ratio of YL emission to BL emission.It can be concluded from these phenomena that the edge threading dislocation and screw threading dislocation can enhance the YL and BL emissions,respectively. | CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，9： | 2 |
| 7 | High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD显示文摘We fabricated p-i-n tunnel junction(TJ)contacts for hole injection on c-plane green micro-light-emitting diodes(micro-LEDs)by a hybrid growth approach using plasma-assisted molecular beam epitaxy(PA-MBE)and metal–organic chemical vapor deposition(MOCVD).The TJ was formed by an MBE-grown ultra-thin unintentionally doped In Ga N polarization layer and an n^(++)∕n^(+)-GaN layer on the activated p^(++)-Ga N layer prepared by MOCVD.This hybrid growth approach allowed for the realization of a steep doping interface and ultrathin depletion width for efficient inter-band tunneling.Compared to standard micro-LEDs,the TJ micro-LEDs showed a reduced device resistance,enhanced electroluminescence intensity,and a reduced efficiency droop.The size-independent J-V characteristics indicate that TJ could serve as an excellent current spreading layer.All these results demonstrated that hybrid TJ contacts contributed to the realization of high-performance micro-LEDs with long emission wavelengths. | YAOZHENG WU BIN LIU FEIFAN XU YIMENG SANG TAO TAO ZILI XIE KE WANG XIANGQIAN XIU PENG CHEN DUNJUN CHEN HAI LU RONG ZHANG YOUDOU ZHENG | 2021 | Photonics Research2021，9，9： | 2 |
| 8 | Study of buffer and epitaxy technology in two-step growth of aluminium nitride显示文摘AlN (aluminium nitride) films were prepared by metalorganic chemical vapor depo- sition (MOCVD) on c-plane sapphire (α-Al2O3) substrates. By means of studying the traces of in-situ optical reflectivity, it was found that the AlN nucleation layer showed a specific (0001) lattice orientation, which differed from the GaN nucleation layer on (0001) sapphire substrates. The AlN buffer suffered the compressive stress at the initial stage of nucleation. And the compressive strain was relaxed gradually along with the thickness of buffer increasing and consequently annealing. Optical transmission spectra revealed that in the process of growing AlN epilayers, higher V/III ratio could improve the crystal quality but reduce the growth rates. In addition, proper doping of silane (SiH4) could improve the surface morphology of AlN film. | LIU QiJia ZHANG Rong XIE ZiLi LIU Bin XU Feng YAO Jing NIE Chao XIU XiangQian HAN Ping ZHENG YouDou GONG HaiMei | 2008 | Science China(Technological Sciences)2008，51，11： | 1 |
| 9 | Comparative studies of heterogeneous photocatalytic oxidation of heptane and toluene on pure titania , titania-silica mixed oxides and sulfated titania显示文摘 | Xie Chao Xu Zili Qiujing Yang | 2004 | Journal of Molecular Catalysis A2004，217，： | 1 |
| 10 | The temperature dependence of optical properties of InGaN alloys显示文摘In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper. | ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 11 | A modified simplified coherent potential approximation model of band gap energy of III-V ternary alloys显示文摘Based on the modification of the simplified coherent potential approximation(SCPA),a model is developed to calculate the composition dependence of the band gap energy of III-V ternary alloys with the same anion.The derived equation is used to fit the experimental band gap energy of In x Al 1 x N,In x Ga 1 x N and Al x Ga 1 x N with x from 0 to 1.It is found that the fitting results are better than those done by using SCPA.The fitting results are also better than those obtained by using the formula with a small bowing coefficient,especially for In x Al 1 x N.In addition,our model can also be used to describe the composition dependence of band gap energy of other III-V ternary alloys. | Zhao ChuanZhen Zhang Rong Liu Bin Fu DeYi Li Ming Xiu XiangQian Xie ZiLi Zheng YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 12 | Enhanced photocatalytic activity of titania-silica mixed oxide prepared via basic hydrolyzation显示文摘 | Xie Chao Xu Zili Yang Qiujing | 2004 | Material Science & Engineering B2004，112，： | 1 |
| 13 | Two-step growth of m-plane GaN epilayer on IAAIO2 (100) by metal-organic chemical vapor deposition 显示文摘 | Liu Chengxiang Xie Zili Han Ping | 2007 | Journal of Crystal Growth2007，298，1： | 1 |
| 14 | New Route to Syn-thesize Highly Active Nanocrystalline Sulfated Titania-Silica:Synergetic Effects Between Sulfate Species and Silica inEnhancing the Photocatalysis Efficiency 显示文摘 | Xie Chao Yang Qiujing Xu Zili | 2006 | J Phys Chem B2006，110，17： | 1 |
| 15 | The parameters in the band-anticrossing model for In_xGa_(1-x)N_yP_(1-y) before and after annealing显示文摘We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters. | ZHAO ChuanZhen ZHANG Rong LIU Bin YU LiYuan TANG ChunXiao XIE ZiLi XIU XiangQian ZHENG YouDou | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，12： | 1 |
| 16 | Comparative studies of heterogeneous photocatalytic oxidation of heptane and toluene on pure titania,titania-silica mixed oxides and sulfated titania显示文摘 | Chao Xie Zili Xu Qiujing Yang | 2004 | Journal of Molecular Catalysis A:Chemical2004，217，： | 1 |
| 17 | 显示文摘 | Liu Chengxiang Xie Zili Han Ping | 2007 | Journal of Crystal Growth2007，298，： | 1 |
| 18 | New Route to Synthesize Highly Active Nanocrystalline Sulfated TitaniaSilica: Synergetic Effects between Sulfate Species and Silica in Enhancing the Photocatalysis Efficiency显示文摘 | Chao Xie Qiujing Yang Zili Xu | 2006 | Phys Chem: B2006，，17： | 1 |
| 19 | Simulation of a new style vertical HVPE system显示文摘In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy(HVPE) system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN. | ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，12： | 1 |
| 20 | Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)显示文摘Photoluminescence properties of highly p+-doped GaAs1-y Sby are investigated.Band gap narrowing(BGN) effect is considered for heavily doped GaAs1-ySby epilayers.Band-gap E g(GaAs1-ySby)=1.25y 2-1.95y+1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K.Fermi level(Ef) and full width at half maximum(FWHM) of photoluminescence increase with antimony mole fraction.The increase of Fermi level is attributed to hole mass of GaAs 1 y Sb y decrease which is resulted from antimony composition increase.The increase of Fermi level means that more electrons participate in indirect transition to result in FWHM increases. | GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi | 2012 | Science China(Technological Sciences)2012，55，11： | 1 |
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