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| 1 | A New Hybird Semantic Similarity Measure based on WordNet显示文摘 | Lingling Meng junzhong Gu Zili Zhou | 2012 | Springer Berlin Heidelberg2012，345，： | 1 |
| 2 | The temperature dependence of optical properties of InGaN alloys显示文摘In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper. | ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 3 | Mechanical performance of low shrinkage engineered cementitious composite in tension and compression 显示文摘 | Zhang J Gong Chengxu Gu Zili Ju Xianchun | 2009 | Journal of Composite Materials2009，43，22： | 1 |
| 4 | Efficacy evaluation and mechanism of Bacillus subtilis EBS03 against cotton Verticillium wilt显示文摘Background:In our previous study,a strain EBS03 with good biocontrol potential was screened out of 48 strains of cotton endophyte Bacillus subtilis by evaluating the controlling effect against cotton Verticillium wilt.However,its mechanism for controlling Verticillium wilt remains unclear.The objective of this study was to further clarify its con-trolling effect and mechanism against cotton Verticillium wilt.Results:The results of confrontation culture test and double buckle culture test showed that the inhibitory effects of EBS03 volatile and nonvolatile metabolite on mycelium growth of Verticillium dahliae were 70.03%and 59.00%,respectively;the inhibitory effects of sporulation and microsclerotia germination were 47.16%and 70.06%,respec-tively.In the greenhouse test,the EBS03 fermentation broth root irrigation had the highest controlling effect at 87.11%on cotton Verticillium wilt,and significantly promoted the growth of cotton seedlings.In the field experi-ment,the controlling effect of EBS03 fermentation broth to cotton Verticillium wilt was 42.54%at 60 days after cotton sowing,and the boll number per plant and boll weight in EBS03 fermentation broth seed soaking,root irrigation,and spraying treatments significantly increased by 19.48%and 7.42%,30.90%and 2.62%,15.99%and 9.20%,respec-tively.Furthermore,EBS03 improved the resistance of cotton leaves against the infection of V.dahliae,and induced the outbreak of reactive oxygen species and accumulation of callose.In addition,the results of real time fluorescent quantitative polymerase chain reaction(RT-qPCR)detection showed that EBS03 significantly induced upregulation expression level of defense-related genes PAL,POD,PPO,and PR10 in cotton leaves,enhanced cotton plant resistance to V.dahliae,and inhibited colonization level of this fungal pathogen in cotton.Conclusion:Bacillus subtilis EBS03 has a good biological defense capability,which can inhibit the growth and coloni-zation level of V.dahliae,and activate the resistance of cotton to Verticillium wilt,thus increase cotton yield. | BAI Hongyan FENG Zili ZHAO Lihong FENG Hongjie WEI Feng ZHOU Jinglong GU Aixing ZHU Heqin PENG Jun ZHANG Yalin | 2022 | Journal of Cotton Research2022，5，4： | 1 |
| 5 | Simulation of a new style vertical HVPE system显示文摘In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy(HVPE) system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN. | ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，12： | 1 |
| 6 | Combination of photodynamic therapy and stimulator of interferon genes(STING)agonist inhibits colorectal tumor growth and recurrence显示文摘Dear Editor,Great progress has been made in the clinical use of photodynamic therapy(PDT)for the treatment of patients with superficial tumors[1].However,cancer recurrence and metastasis have limited the application of PDT in the treatment of solid tumors and advanced cancers.In this context,combining PDT with other complementary immunotherapy regimens may overcome these limitations of PDT[2]. | Yang Hao Sen Ma Zili Gu Alireza Haghparast Timo Schomann Zhenfeng Yu Yuanyuan He Xiaoxv Dong Luis J Cruz Peter ten Dijke | 2023 | Cancer Communications2023，43，4： | 0 |
| 7 | The growth temperatures dependence of optical and electrical properties of InN films显示文摘InN films grown on sapphire at different substrate temperatures from 550℃ to 700℃ by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100℃) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600℃. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films,which also indicates strong growth temperature dependence. The InN films grown at temperature of 600℃ show not only a high mobility with low carrier concentration,but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600℃,the Hall mobility achieves up to 938 cm2/Vs with electron concen-tration of 3.9×1018 cm-3. | LIU Bin ZHANG Rong XIE ZiLi XIU XiangQian LI Liang KONG JieYing YU HuiQiang HAN Pin GU ShuLin SHI Yi ZHENG YouDou TANG ChenGuang CHEN YongHai WANG ZhanGuo | 2008 | Science China(Physics,Mechanics & Astronomy)2008，51，3： | 0 |
| 8 | Microcarriers promote the through interface movement of mouse trophoblast stem cells by regulating stiffness显示文摘Mechanical force is crucial in the whole process of embryonic development.However,the role of trophoblast mechanics during embryo implantation has rarely been studied.In this study,we constructed a model to explore the effect of stiffness changes in mouse trophoblast stem cells(mTSCs)on implantation:microcarrier was prepared by sodium alginate using a droplet microfluidics system,and mTSCs were attached to the microcarrier surface with laminin modifications,called T(micro).Compared with the spheroid,formed by the self-assembly of mTSCs(T(sph)),we could regulate the stiffness of the microcarrier,making the Young’s modulus of mTSCs(367.70±79.81 Pa)similar to that of the blastocyst trophoblast ectoderm(432.49±151.90 Pa).Moreover,T(micro)contributes to improve the adhesion rate,expansion area and invasion depth of mTSCs.Further,T(micro)was highly expressed in tissue migration-related genes due to the activation of the Rho-associated coiled-coil containing protein kinase(ROCK)pathway at relatively similar modulus of trophoblast.Overall,our study explores the embryo implantation process with a new perspective,and provides theoretical support for understanding the effect of mechanics on embryo implantation. | Zili Gao Jia Guo Bo Gou Zhen Gu Tan Jia Sinan Ma Liyuan Jiang Wenli Liu Lixun Zhou Qi Gu | 2023 | Bioactive Materials2023，，10： | 0 |
| 9 | Carrier transport and luminescence properties of n-type GaN显示文摘The surface morphology,electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm-3 to 5.4×1018 cm-3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases,which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV,which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping. | ZHANG Zeng ZHANG Rong XIE ZiLi LIU Bin XIU XiangQian JIANG RuoLian HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2008 | Science China(Physics,Mechanics & Astronomy)2008，51，8： | 0 |
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