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| 1 | Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer显示文摘Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is found that the densities of screw and edge threading dislocations increase with the V/III ratio of the buffer layer,and the intensities of the yellow luminescence(YL) and blue luminescence(BL) emissions also increase dramatically.However,the density ratio of the edge threading dislocation to the screw threading dislocation remains invariant,as well as the intensity ratio of YL emission to BL emission.It can be concluded from these phenomena that the edge threading dislocation and screw threading dislocation can enhance the YL and BL emissions,respectively. | CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，9： | 2 |
| 2 | Emergency airport site selection using global subdivision grids显示文摘The occurrence of large-magnitude disasters has significantly aroused public attention regarding diversified site selection of emergency facilities.In particular,emergency airport site selection(EASS)is highly complicated,and relevant research is rarely conducted.Emergency airport site selection is a scenario with a wide spatiotemporal range,massive data,and complex environmental information,while traditional facility site selection methods may not be applicable to a large-scale time-varying airport environment.In this work,an emergency airport site selection application is presented based on the GeoSOT-3D global subdivision grid model,which has demonstrated good suitability of the discrete global grid system as a spatial data structure for site selection.This paper proposes an objective function that adds a penalty factor to solve the constraints of coverage and the environment in airport construction.Through multiple iterations of the simulated annealing algorithm,the optimal airport construction location can be selected from multiple preselected points.With experimental verifications,this research may effectively and reasonably solve the emergency airport site selection issue under different circumstances. | Bing Han Tengteng Qu Zili Huang Qiangyu Wang Xinlong Pan | 2022 | Big Earth Data2022，6，3： | 2 |
| 3 | Study of buffer and epitaxy technology in two-step growth of aluminium nitride显示文摘AlN (aluminium nitride) films were prepared by metalorganic chemical vapor depo- sition (MOCVD) on c-plane sapphire (α-Al2O3) substrates. By means of studying the traces of in-situ optical reflectivity, it was found that the AlN nucleation layer showed a specific (0001) lattice orientation, which differed from the GaN nucleation layer on (0001) sapphire substrates. The AlN buffer suffered the compressive stress at the initial stage of nucleation. And the compressive strain was relaxed gradually along with the thickness of buffer increasing and consequently annealing. Optical transmission spectra revealed that in the process of growing AlN epilayers, higher V/III ratio could improve the crystal quality but reduce the growth rates. In addition, proper doping of silane (SiH4) could improve the surface morphology of AlN film. | LIU QiJia ZHANG Rong XIE ZiLi LIU Bin XU Feng YAO Jing NIE Chao XIU XiangQian HAN Ping ZHENG YouDou GONG HaiMei | 2008 | Science China(Technological Sciences)2008，51，11： | 1 |
| 4 | Two-step growth of m-plane GaN epilayer on IAAIO2 (100) by metal-organic chemical vapor deposition 显示文摘 | Liu Chengxiang Xie Zili Han Ping | 2007 | Journal of Crystal Growth2007，298，1： | 1 |
| 5 | Preparation of Cu 2 ZnSnS 4 thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method显示文摘 | Zhenghua Su Chang Yan Kaiwen Sun Zili Han Fangyang Liu Jin Liu Yanqing Lai Jie Li Yexiang Liu | 2012 | Applied Surface Science2012，，19： | 1 |
| 6 | Formation and evolution of the strike-slip faults in the central Sichuan Basin, SW China显示文摘Based on 3D seismic and drilling data, the timing, evolution and genetic mechanism of deep strike-slip faults in the central Sichuan Basin are thoroughly examined by using the U-Pb dating of fault-filled carbonate cement and seismic-geological analysis. The strike-slip fault system was initially formed in the Late Sinian, basically finalized in the Early Cambrian with dextral transtensional structure, was overlaid with at least one stage of transpressional deformation before the Permian, then was reversed into a sinistral weak transtensional structure in the Late Permian. Only a few of these faults were selectively activated in the Indosinian and later periods. The strike-slip fault system was affected by the preexisting structures such as Nanhuanian rifting normal faults and NW-striking deep basement faults. It is an oblique accommodated intracratonic transfer fault system developed from the Late Sinian to Early Cambrian to adjust the uneven extension of the Anyue trough from north to south and matches the Anyue trough in evolution time and intensity. In the later stage, multiple inversion tectonics and selective activation occurred under different tectonic backgrounds. | MA Bingshan LIANG Han WU Guanghui TANG Qingsong TIAN Weizhen ZHANG Chen YANG Shuai ZHONG Yuan ZHANG Xuan ZHANG Zili | 2023 | Petroleum Exploration and Development2023，50，2： | 1 |
| 7 | 显示文摘 | Liu Chengxiang Xie Zili Han Ping | 2007 | Journal of Crystal Growth2007，298，： | 1 |
| 8 | Experimental study on vibration characteristics of Luqiao transition section of high speed railway显示文摘 | MA Weibin HAN Zili ZHU Zhonglin | 2009 | Journal of Geotechnical Engineering2009，31，1： | 1 |
| 9 | Simulation of a new style vertical HVPE system显示文摘In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy(HVPE) system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN. | ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，12： | 1 |
| 10 | The growth and properties of an m-plane InN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition显示文摘The m-plane InN (1100) epilayers have been grown on a LiAlO2 (100) substrate by a two-step growth method using a metal-organic chemical vapor deposition (MOCVD) system. The low temperature InN buffer layer (LT-InN) is introduced to overcome the drawbacks of thermal instability of LiAlO2 (LAO) and to relieve the strains due to a large thermal mismatch between LAO and InN. Then the high temperature m-plane InN (1100) epilayers (HT-InN) were grown. The results of X-ray diffraction (XRD) suggest that the m-plane InN (1100) epilayer is a single crystal. The X-ray rocking curves (scans) (XRC) and atomic force microscopy (AFM) indicate that the m-plane InN (1100) epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K. | XIE ZiLi ZHANG Rong FU DeYi LIU Bin XIU XiangQian HUA XueMei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，7： | 0 |
| 11 | Low-strain binary hexacyanoferrate nanocuboids with concentration-gradient structure towards fast and durable energy storage显示文摘The exploration of low-strain and high-performance electrode is a crucial issue for aqueous potassiumion battery(AKIB).Herein,a novel potassium mediated iron/manganese binary hexacyanoferrate nanocuboid,i.e.,K_(x)Fe_(y)Mn_(1-y)[Fe(CN)_(6)]·nH_(2)O(KFeMnHCF)nanocuboid,with the concentration-gradient(CG)structure is designed as a high-performance cathode for AKIB.Internal the CG-KFeMnHCF nanocuboids,the manganese content gradually decreases from the interior to the surface and the iron content changes reverse,resulting in the concentration-gradient structure.Both experimental and finite element simulation(FEA)results demonstrate the lower internal stress and better mechanical characteristics of CG structured nanocuboid than the homogenous structured one upon ion intercalation/deintercalation processes.Meanwhile,the electrochemical testing and theoretical calculation(DFT)results disclose the substitution of Fe to Mn in the KMnHCF crystal results in the enhanced electronic conductivity,potassium migration and electrochemical kinetics.Taken both advantages from the well-designed architecture and optimized crystal structure,the CG-KFeMnHCF achieves the superior rate capability and ultrahigh stability in aqueous potassium ion system.In particular,the CG-KFe_(0.31)Mn_(0.69)HCF achieves the best comprehensive properties among all the samples.The full AKIBs based on CG-KFe_(0.31)Mn_(0.69)HCF cathode achieves the high energy density(83 Wh kg^(-1)),superior power density,high capacity retention(83%)over high-rate long-term cycles,good adaptation to a wide temperature range(-20 to 40℃)and high reliability even under outside deformations.Therefore,this work not only provides a new clue to design the highperformance cathode,but also promotes the applications of AKIBs for diverse electronics and wide working environments. | Yutong Lin Bing Han Donglan Zhang Xueya Liu Zili Wang Zhengyu Wang Liang Si Sen Zhang Chao Deng | 2022 | Journal of Energy Chemistry2022，31，11： | 0 |
| 12 | A lncRNA from an inflammatory bowel disease risk locus maintains intestinal host-commensal homeostasis显示文摘Inflammatory bowel diseases(IBD)are known to have complex,genetically influenced etiologies,involving dysfunctional interactions between the intestinal immune system and the microbiome.Here,we characterized how the RNA transcript from an IBD-associated long non-coding RNA locus(“CARINH-Colitis Associated IRF1 antisense Regulator of Intestinal Homeostasis”)protects against IBD.We show that CARINH and its neighboring gene coding for the transcription factor IRF1 together form a feedforward loop in host myeloid cells.The loop activation is sustained by microbial factors,and functions to maintain the intestinal host-commensal homeostasis via the induction of the anti-inflammatory factor IL-18BP and anti-microbial factors called guanylate-binding proteins(GBPs).Extending these mechanistic insights back to humans,we demonstrate that the function of the CARINH/IRF1 loop is conserved between mice and humans.Genetically,the T allele of rs2188962,the most probable causal variant of IBD within the CARINH locus from the human genetics study,impairs the inducible expression of the CARINH/IRF1 loop and thus increases genetic predisposition to IBD.Our study thus illustrates how an IBD-associated lncRNA maintains intestinal homeostasis and protects the host against colitis. | Hongdi Ma Taidou Hu Wanyin Tao Jiyu Tong Zili Han Dietmar Herndler-Brandstetter Zheng Wei Ruize Liu Tingyue Zhou Qiuyuan Liu Xuemei Xu Kaiguang Zhang Rongbin Zhou Judy H.Cho Hua-Bing Li Hailiang Huang Richard A.Flavell Shu Zhu | 2023 | Cell Research2023，33，5： | 0 |
| 13 | The growth temperatures dependence of optical and electrical properties of InN films显示文摘InN films grown on sapphire at different substrate temperatures from 550℃ to 700℃ by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100℃) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600℃. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films,which also indicates strong growth temperature dependence. The InN films grown at temperature of 600℃ show not only a high mobility with low carrier concentration,but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600℃,the Hall mobility achieves up to 938 cm2/Vs with electron concen-tration of 3.9×1018 cm-3. | LIU Bin ZHANG Rong XIE ZiLi XIU XiangQian LI Liang KONG JieYing YU HuiQiang HAN Pin GU ShuLin SHI Yi ZHENG YouDou TANG ChenGuang CHEN YongHai WANG ZhanGuo | 2008 | Science China(Physics,Mechanics & Astronomy)2008，51，3： | 0 |
| 14 | Carrier transport and luminescence properties of n-type GaN显示文摘The surface morphology,electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm-3 to 5.4×1018 cm-3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases,which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV,which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping. | ZHANG Zeng ZHANG Rong XIE ZiLi LIU Bin XIU XiangQian JIANG RuoLian HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2008 | Science China(Physics,Mechanics & Astronomy)2008，51，8： | 0 |
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