|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer显示文摘Doping, which is the intentional introducti on of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we prese nt high-quality two-dime nsional SnS2 nano sheets with well-controlled Sb dopi ng concen tration via direct vapor growth approach and following micromechanical cleavage process. X-ray photoelectro n spectroscopy (XPS) measureme nt dem on strates that Sb contents of the doped samples are approximately 0.22%, 0.34% and 1.21%, respectively, and doping in duces the upward shift of the Fermi level with respect to the pristi ne SnS2. Tran smissio n electro n microscopy (TEM) characterizatio n exhibits that Sb-doped SnS2 nano sheets have a high-quality hexagonal symmetry structure and Sb element is uniformly distributed in the nano sheets. The phototra nsistors based on the Sb-doped SnS2 mono layers show n-type behavior with high mobility which is one order of magn itude higher than that of pristi ne SnS2 phototra nsistors. The photorespo nsivity and exter nal quantum efficiency (EQE) of Sb-S nS2 mono layers phototra nsistors are approximately three orders of magnitude higher than that of pristine SnS2 phototransistor. The results suggest that the method of reducing Shottky barrier width to achieve high mobility and photoresp on sivity is effective, and Sb-doped SnS2 mono layer has significant potential in future nanoelectronic and optoelectronic applications. | Junchi Liu Xiao Liu Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Liming Tang Keqiu Chen Yuan Liu Jingbo Li Zhongming Wei Xidong Duan | 2019 | Nano Research2019，12，2： | 7 |
| 2 | Negative dif- ferential resistance induced by intermolecular interaction in a bimo- lecular device显示文摘 | LONG Mengqiu CHEN Keqiu WANG Lingling | 2007 | Appl Phys Lett2007，91，23： | 1 |
| 3 | Effects of symmetry and stone-wales defect on spir~-dependent electronic transport in zigzag graphene nanoribbons显示文摘 | Ren Yun Chen Keqiu | 2010 | J Appl Phys2010，107，04： | 1 |
| 4 | Effects of symmetry and Stone-Wales defects on spin-dependent electric transport in zigzag graphene nanoribbons显示文摘 | Ren Yun Chen Keqiu | | 0，，： | 1 |
| 5 | Multiple sub- hyper-spheres support vector machine for multi-class clas- sification显示文摘 | LIU SHUANG CHEN PENG LI KEQIU | 2014 | International Journal of Wavelets Multireso- lution & Information Processing2014，12，3： | 1 |
| 6 | Evidence for interlayer coupling and moiréexcitons in twisted WS_(2)/WS_(2)homostructure superlattices显示文摘The formation of moirésuperlattices in twisted van der Waals(vdW)homostructures provides a versatile platform for designing the electronic band structure of two-dimensional(2D)materials.In graphene and transition metal dichalcogenides(TMDs)moirésystems,twist angle has been shown to be a key parameter for regulating the moirésuperlattice.However,the effect of the modulation of the twist angle on moirépotential and interlayer coupling has not been the subject of experimental investigation.Here,we report the observation of the modulation of moirépotential and intralayer excitons in the WS_(2)/WS_(2)homostructure.By accurately adjusting the torsion angle of the homobilayers,the depth of the moirépotential can be modulated.The confinement effect of the moirépotential on the intralayer excitons was further demonstrated by the changing of temperature and valley polarization.Furthermore,we show that a detection of atomic reconstructions by the low-frequency Raman mapping to map out inhomogeneities in moirélattices on a large scale,which endows the uniformity of interlayer coupling.Our results provide insights for an in-depth understanding of the behaviors of moiréexcitons in the twisted van der Waals homostructure,and promote the study of electrical engineering and topological photonics. | Haihong Zheng Biao Wu Shaofei Li Jun He Keqiu Chen Zongwen Liu Yanping Liu | 2023 | Nano Research2023，16，2： | 0 |
| 7 | Evidence for moiréintralayer excitons in twisted WSe_(2)/WSe_(2) homobi layer superlattices显示文摘Recent advances in twisted van der Waals heterostructure superlattices have emerged as a powerful and attractive platform for exploring novel condensed matter physics due to the interplay between the moirépotential and Coulomb interactions.The moirésuperlattices act as a periodic confinement potential in space to capture interlayer excitons(IXs),resulting in moiréexciton arrays,which provide opportunities for quantum emitters and many-body physics.The observation of moiréIXs in twisted transition-metal dichalcogenide(TMD)heterostructures has recently been widely reported.However,the capture and study of the moiréintralayer excitons based on TMD twisted homobilayer(T-HB)remain elusive.Here,we report the observation of moiréintralayer excitons in a WSe_(2)/WSe_(2) T-HB with a small twist angle by measuring PL spectrum.The multiple split peaks with an energy range of 1.55-1.73 eV are different from that of the monolayer WSe_(2) exciton peaks.The split peaks were caused by the trapping of intralayer excitons via the moirépotential.The confinement effect of the moirépotential on the moiréintralayer excitons was further demonstrated by the changing of temperature,laser power,and valley polarization.Our findings provide a new avenue for exploring new correlated quantum phenomena and their applications. | Biao Wu Haihong Zheng Shaofei Li Junnan Ding Jun He Yujia Zeng Keqiu Chen Zongwen Liu Shula Chen Anlian Pan Yanping Liu | 2022 | Light(Science & Applications)2022，11，7： | 0 |
| 8 | Novel two-dimensional PdSe phase:A puckered material with excellent electronic and optical properties显示文摘By combining structural search and first-principles calculations,we predict a new stable twodimensional PdSe monolayer,and systematically investigate its structural,electronic and optical properties.The calculated formation enthalpy,phonon spectra and molecular dynamic simulations confirm that PdSe monolayer possesses excellent thermodynamic and dynamic stability.PdSe monolayer is a semiconductor with an indirect band gap of∼1.10 eV.The carrier transport of PdSe monolayer is dominated by hole and exhibits remarkable anisotropy due to the intrinsic structure anisotropy.The optical properties also show obvious anisotropic characteristic with considerable absorption coefficient and broad absorption from the visible to ultraviolet regions.Benefiting from these excellent physical properties,PdSe monolayer is expected to be a promising candidate as electronic and optoelectronic devices. | Mingyun Huang Xingxing Jiang Yueshao Zheng Zhengwei Xu Xiong-Xiong Xue Keqiu Chen Yexin Feng | 2022 | Frontiers of physics2022，17，5： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员