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| 1 | Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band显示文摘A high-performance and broadband heterojunction photodetector has been successfully fabricated.The heterostructure device is based on a uniform and pinhole-free perovskite film constructed on top of a single-crystal germanium layer.The perovskite/germanium photodetector shows enhanced performance and a broad spectrum compared with the single-material-based device.The photon response properties are characterized in detail from the visible to near-infrared spectrum.At an optical fibre communication wavelength of 1550 nm,the heterojunction device exhibits the highest responsivity of 1.4 A/W.The performance is promoted because of an antireflection perovskite coating,the thickness of which is optimized to 150 nm at the telecommunication band.At a visible light wavelength of 680 nm,the device shows outstanding responsivity and detectivity of 228 A/W and 1.6×10^(10) Jones,respectively.These excellent properties arise from the photoconductive gain boost in the heterostructure device.The presented heterojunction photodetector provides a competitive approach for wide-spectrum photodetection from visible to optical communication areas.Based on the distinguished capacity of light detection and harvesting from the visible to near-infrared spectrum,the designed germanium/perovskite heterostructure configuration is believed to provide new building blocks for novel optoelectronic devices. | Wei Hu Hui Cong Wei Huang Yu Huang Lijuan Chen Anlian Pan Chunlai Xue | 2019 | Light(Science & Applications)2019，8，1： | 14 |
| 2 | Characteristics of the lunar samples returned by the Chang'E-5 mission显示文摘Forty-five years after the Apollo and Luna missions returned lunar samples,China's Chang’E-5(CE-5)mission collected new samples from the mid-latitude region in the northeastern Oceanus Procellarum of the Moon.Our study shows that 95%of CE-5 lunar soil sizes are found to be within the range of 1.40-9.35μm,while 95%of the soils by mass are within the size range of 4.84-432.27μm.The bulk density,true density and specific surface area of CE-5 soils are 1.2387 g/cm^(3),3.1952 g/cm^(3) and 0.56 m^(2)/g,respectively.Fragments from the CE-5 regolith are classified into igneous clasts(mostly basalt),agglutinate and glass.A few breccias were also found.The minerals and compositions of CE-5 soils are consistent with mare basalts and can be classified as low-Ti/low-Al/low-K type with lower rare-earth-element contents than materials rich in potassium,rare earth element and phosphorus.CE-5 soils have high FeO and low Mg index,which could represent a new class of basalt. | Chunlai Li Hao Hu Meng-Fei Yang Zhao-Yu Pei Qin Zhou Xin Ren Bin Liu Dawei Liu Xingguo Zeng Guangliang Zhang Hongbo Zhang Jianjun Liu Qiong Wang Xiangjin Deng Caijin Xiao Yonggang Yao Dingshuai Xue Wei Zuo Yan Su Weibin Wen Ziyuan Ouyang | 2022 | National Science Review2022，9，2： | 12 |
| 3 | Olivine-norite rock detected by the lunar rover Yutu-2 likely crystallized from the SPA-impact melt pool显示文摘Chang’E-4 landed in the South Pole-Aitken(SPA)basin,providing a unique chance to probe the composition of the lunar interior.Its landing site is located on ejecta strips in Von Karm´an crater that´possibly originate from the neighboring Finsen crater.A surface rock and the lunar regolith at 10 sites along the rover Yutu-2 track were measured by the onboard Visible and Near-Infrared Imaging Spectrometer in the first three lunar days of mission operations.In situ spectra of the regolith have peak band positions at 1 and 2μm,similar to the spectral data of Finsen ejecta from the Moon Mineralogy Mapper,which confirms that the regolith’s composition of the landing area is mostly similar to that of Finsen ejecta.The rock spectrum shows similar band peak positions,but stronger absorptions,suggesting relatively fresh exposure.The rock may consist of 38.1±5.4%low-Ca pyroxene,13.9±5.1%olivine and 48.0±3.1%plagioclase,referred to as olivine-norite.The plagioclase-abundant and olivine-poor modal composition of the rock is inconsistent with the origin of the mantle,but representative of the lunar lower crust.Alternatively,the rock crystallized from the impact-derived melt pool formed by the SPA-impact event via mixing the lunar crust and mantle materials.This scenario is consistent with fast-cooling thermal conditions of a shallow melt pool,indicated by the fine to medium-sized texture(<3 mm)of the rock and the SPA-impact melting model[Icarus 2012;220:730–43]. | Honglei Lin Zhiping He Wei Yang Yangting Lin Rui Xu Chi Zhang Meng-Hua Zhu Rui Chang Jinhai Zhang Chunlai Li Hongyu Lin Yang Liu Sheng Gou Yong Wei Sen Hu Changbin Xue Jianfeng Yang Jie Zhong Xiaohui Fu Weixing Wan Yongliao Zou | 2020 | National Science Review2020，7，5： | 9 |
| 4 | Recent progress of integrated circuits and optoelectronic chips显示文摘Integrated circuits(ICs)and optoelectronic chips are the foundation stones of the modern information society.The IC industry has been driven by the so-called'Moore's law'in the past 60 years,and now has entered the post Moore's law era.In this paper,we review the recent progress of ICs and optoelectronic chips.The research status,technical challenges and development trend of devices,chips and integrated technologies of typical IC and optoelectronic chips are focused on.The main contents include the development law of IC and optoelectronic chip technology,the IC design and processing technology,emerging memory and chip architecture,brain-like chip structure and its mechanism,heterogeneous integration,quantum chip technology,silicon photonics chip technology,integrated microwave photonic chip,and optoelectronic hybrid integrated chip. | Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI | 2021 | Science China(Information Sciences)2021，64，10： | 7 |
| 5 | 30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application显示文摘We report the demonstration of a normal-incidence p-i-n germanium-tin(Ge_(0.951)Sn_(0.049))photodetector on silicon-on-insulator substrate for 2μm wavelength application.The DC and RF characteristics of the devices have been characterized.A dark current density under−1 V bias of approximately 125 mA/cm^(2) is achieved at room temperature,and the optical responsivity of 14 mA/W is realized for illumination wavelength of 2μm under−1 V reverse bias.In addition,a 3 dB bandwidth(f_(3dB))of around 30 GHz is achieved at−3 V,which is the highest reported value among all group III–V and group IV photodetectors working in the 2μm wavelength range.This work illustrates that a GeSn photodetector has great prospects in 2μm wavelength optical communication. | Xiuli Li Linzhi Peng Zhi Liu Zhiqi Zhou Jun Zheng Chunlai Xue Yuhua Zuo Baile Chen Buwen Cheng | 2021 | Photonics Research2021，9，4： | 6 |
| 6 | Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates显示文摘A horizontal p-i-n ridge waveguide emitter on a slion(100)substrate with a Gen,g1Sno.c9/Ge multi quantum-well(MQW)active layer was fabricated by molecular beam epitaxy.The device structure was designed to reduce light absorption of metal electrodes and improve injection efficiency.Electroluminescence(EL)at a wavelength of 2160 nm was observed at room temperature.Theoretical calculations indicate that the emission peak corresponds well to the direct bandgap transition(nr-mHr).The light output power was about 2.0μW with an injection current density of 200 kA/cm^2.These results show that the horizontal GeSn/Ge MQW ridge waveguide emiters have great pros-pects for group-IV light sources. | LINZHI PENG Xu LI ZHI LIU XIANGQUAN LIU JUN ZHENG CHUNLAI XUE YUHUA ZUO BUWEN CHENG | 2020 | Photonics Research2020，8，6： | 3 |
| 7 | Scaffolding protein Gab1 regulates myeloid dendritic cell migration in allergic asthma显示文摘气喘是在多重基因、环境的因素之中包含复杂相互影响的普通过敏混乱。最近的研究作为一个新奇气喘危险性因素识别了人的 GAB1 的基因变体。然而,在肺的 Gab1 的功能仍然保持大部分未经勘探。在这研究,我们首先在尖锐恶化期间从气喘的病人在外部血 mononuclear 房间观察了 Gab1 水平的举起与康复相比。有在 myeloid 的有选择地破坏的 Gab1 的老鼠树枝状的房间(mDCs ) 更加在气喘的试验性的模型稀释了过敏发炎。进一步的调查在 Gab1 缺乏的 mDCs 的调停 CCL19 的移植揭示了突出的减小到排干淋巴节点和驾驶 Th2 的适应激活的随后的缺陷。机械学地, Gab1 是在气喘的回答期间调整 mDC 移植的 CCL19/CCR7 chemokine 轴的一个必要部件。一起,这些调查结果在肺为 Gab1 的角色提供第一条证据,给我们气喘的致病的更深的理解。 | Yun Zhang Yun Xu Shuwan Liu Xiaohong Guo Dong Cen Jiaqi Xu Heyuan Li Kaijun Li Chunlai Zeng Linrong LU Yiting Zhou Huahao Shen Hongqiang Cheng Xue Zhang Yuehai Ke | 2016 | Cell Research2016，26，11： | 3 |
| 8 | 25 × 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating显示文摘A high-performance monolithic integrated wavelength division multiplexing silicon(Si) photonics receiver chip is fabricated on a silicon-on-insulator platform. The receiver chip has a 25-channel Si nanowire-arrayed waveguide grating, and each channel is integrated with a high-speed waveguide Ge-on-Si photodetector. The central wavelength, optical insertion loss, and cross talk of the array waveguide grating are 1550.6 nm, 5–8 dB, and-12 –-15 dB, respectively. The photodetectors show low dark current density of 16.9 mA∕cm^2 at-1 V and a high responsivity of 0.82 A/W at 1550 nm. High bandwidths of 23 and 29 GHz are achieved at 0 and-1 V, respectively. Each channel can operate at 50 Gbps with low input optical power even under zero bias,which realizes an aggregate data rate of 1.25 Tbps. | ZHI LIU JIASHUN ZHANG XIULI LI LIANGLIANG WANG JIANGUANG LI CHUNLAI XUE JUNMING AN BUWEN CHENG | 2019 | Photonics Research2019，7，6： | 2 |
| 9 | Recent progress in GeSn growth and GeSn-based photonic devices显示文摘The GeSn binary alloy is a new group Ⅳ material that exhibits a direct bandgap when the Sn content exceeds 6%. It shows great potential for laser use in optoelectronic integration circuits(OEIC) on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photodetectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the monolithic integration of Si photonic circuits by the complementary metal–oxide–semiconductor(CMOS) technology. | Jun Zheng Zhi Liu Chunlai Xue Chuanbo Li Yuhua Zuo Buwen Cheng Qiming Wang | 2018 | Journal of Semiconductors2018，39，6： | 2 |
| 10 | 56 Gbps high-speed Ge electro-absorption modulator显示文摘A high-speed evanescent-coupled Ge waveguide electro-absorption modulator(EAM)with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer.Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM.An asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz-Keldysh effect.The insertion loss of the Ge EAM was 6.2 dB at 1610 nm.The EAM showed the high electro-optic bandwidth of 36 GHz at-1 V.Clear open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3Vpp. | ZHI LIU XIULI LI CHAOQUN NIU JUN ZHENG CHUNLAI XUE YUHUA ZUO BUWEN CHENG | 2020 | Photonics Research2020，8，10： | 2 |
| 11 | High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect显示文摘This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode(TAPD)with an ultra-thin barrier layer between the absorption and p+ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer. | Wenzhou Wu Buwen Cheng Jun Zheng Zhi Liu Chuanbo Li Yuhua Zuo Chunlai Xue | 2017 | Journal of Semiconductors2017，38，11： | 1 |
| 12 | Ge-on-Si for Si-based integrated materials and photonic devices显示文摘这份报纸在 Ge-on-Si 的 photonic 设备申请考察最近的进步。因为有 Si 互补 metal-oxide-semiconductor (互补金属氧化物半导体) 的成熟取向附生的技术和相容性, Ge-on-Si 材料和光设备是基于 Si 的 optoelectronic 集成的合适的候选人技术。最近,电泵的 Ge 的现实点亮射出二极管(带)并且光泵的脉搏 Ge 激光, Ge 量井调节的人基于量空限制效果,波导 Ge 调节的人基于 Franz-Keldysh ( FK )效果,和高效在红外线附近的 Ge 察觉者,用 Ge photonic 设备显示了 基于Si 的 optoelectronic 集成。Ge-on-Si 材料也是一个重要平台为 Sibased optoelectronic 集成在它上种另外的材料。InGaAs 和 GeSn 在 Ge-on-Si 上被种了。带的 InGaAs 和 GeSn 光电探测器成功地也被制作了。 | Weixuan HU Buwen CHENG Chunlai XUE Shaojian SU Haiyun XUE Yuhua ZUO Qiming WANG | 2012 | Frontiers of Optoelectronics2012，5，1： | 1 |
| 13 | Enhanced Current Transportation in Siliconriched Nitride(SRN)/Silicon-riched Oxide(SRO)Multilayer Nanostructure显示文摘A novel structure of silicon-riched nitride(SRN)/silicon-riched oxide(SRO) is proposed and prepared using RF reactive magnetron co-sputtering. High temperature annealing of SRN/SRO multilayers leads to formation of Si nanocrystals(NC) from isolating SRN and SRO layers simultaneously, which efficiently improves carrier transport ability compared to conventional SRN/Si_3N_4 counterpart. Micro-Raman scattering analysis reveals that SRN layer has dominating number of denser and smaller Si NCs, while SRO layer has relatively less, sparser and bigger Si NCs, as confirmed by high resolution transmission electron microscopy observation. The substitute SRO layers for Si_3N_4 counterparts significantly increase the amount of Si NCs as well as crystallization ratio in SRN layers; while the average Si NC size can be well controlled by the thickness of SRN layers and the content of N, and hence an obvious stronger absorption in UV region for the novel structure can be observed in absorption spectra. The I-V characteristics show that the current of hybrid SRN/SRO system increases up to 2 orders of magnitude at 1 V and even 5 orders of magnitude at 4 V compared to that of SRN/Si_3N_4 structure. Si NCs in Si Oylayers provide a transport pathway for adjacent Si NCs in Si Nxlayers. The obvious advantage in carrier transportation suggests that SRN/SRO hybrid system could be a promising structure and platform to build Si nanostructured solar cells. | Yeliao Tao Jun Zheng Yuhua Zuo Chunlai Xue Buwen Cheng Qiming Wang | 2012 | Nano-Micro Letters2012，4，4： | 1 |
| 14 | Assessment of air quality improvement effect under the National Total Emission Control Program during the Twelfth National Five-Year Plan in China显示文摘 | Wenbo Xue Jinnan Wang Hao Niu Jintian Yang Baoping Han Yu Lei Hanli Chen Chunlai Jiang | 2013 | Atmospheric Environment2013，，： | 1 |
| 15 | Research progress of Ge on insulator grown by rapid melting growth显示文摘Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility,pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor(CMOS)processes. Based on Ge, Ge on insulator(GOI) not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth(RMG) has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status.Finally, GOI based applications including high performance metal–oxide–semiconductor field effect transistors(MOSFETs) and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits. | Zhi Liu Juanjuan Wen Chuanbo Li Chunlai Xue Buwen Cheng | 2018 | Journal of Semiconductors2018，39，6： | 0 |
| 16 | Effect of the silicon substrate structure on chip spiral inductor显示文摘In this paper,the effect of the substrate structure on the performance of the spiral inductor is investigated by the 3-D electromagnetic simulator,Ansoft high frequency structure simulator(HFSS).With variations in the substrate structure including substrate conductivity,permittivity and thickness of the dielectric layer,the performance of the inductors has been analyzed in detail.The simulation results and analyses indicate that the performance of the spiral inductor can be mostly improved by lowering the conductivity of the substrate,increasing the thickness of the dielectric layer and using the low K dielectric layer.In the mean time,some guidelines or“design rules”are summarized by the results of this study. | Chunlai XUE Fei YAO Buwen CHENG Qiming WANG | 2008 | Frontiers of Electrical and Electronic Engineering in China2008，3，1： | 0 |
| 17 | Control Effects of Biological Fertilizer on Watermelon Fusarium wilt显示文摘With conventional fertilization as the control,the control effects of biological fertilizer and general organic fertilizer on watermelon Fusarium wilt were studied in the paper. The results showed that applying biological fertilizer could effectively reduce the incidence rate of watermelon Fusarium wilt and significantly improve the quality of watermelon,while application of general organic fertilizer had no obvious control effect on watermelon Fusarium wilt. | Hong Chunlai Shi Huajie Zhu Fengxiang Wang Weiping Chen Xiaoyang Yao Yanlai Xue Zhiyong | 2014 | Plant Diseases and Pests2014，5，1： | 0 |
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