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| 1 | The PL 'violet shift' of cerium dioxide on silicon显示文摘CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied from tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of 'violet shift' was observed. | Chai Chunlin Yang Shaoyan Liu Zhikai Liao Meiyong Chen Nuofu Wang Zhanguo | 2001 | Chinese Science Bulletin2001，46，24： | 5 |
| 2 | Study on the promotion of lymphocytes in patients with COVID-19 by broad-spectrum chemokine receptor inhibitor vMIP-Ⅱ and its Mechanism of signal transmission in vitro显示文摘Dear Editor,COVID-19 cases showed a significant decrease in the number of peripheral CD4^(+) and CD8^(+)T cells accompanied by overactivation of cells.1 HHV8-derived viral macrophage inflammatory protein vMIP-Ⅱ is the only broad-spectrum chemokine receptor inhibitor that binds to three subtribes of chemokine receptors,which can significantly increase the specific cell immune response in infected organisms and have an effect of reducing plasma viral load on the viremia period.24 Here we report the effect of vMIP-Ⅱ in COVID-19. | Shiyu Li Shuting Liu Zhenyou Jiang Lixia Feng Yong Gao Youyu Chen Anding Xu Wenhua Huang Nuofu Zhang Hanxiao Sun | 2021 | Signal Transduction and Targeted Therapy2021，6，4： | 5 |
| 3 | Violet/blue photoluminescence from CeO_2 thin film显示文摘CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thinfilm. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to theelectrons transition from Ce4f band to O2p band and thedefect level to O2p band. And these defects levels were lo-cated in the range of 1 eV around Ce4f band. | CHAI Chunlin, YANG Shaoyan, LIU Zhikai, LIAO Meiyong & CHEN Nuofu Key Laboratory of Semiconductor Material Science, Institute of Semi-conductors, Chinese Academy of Sciences, Beijing 100083, China | 2003 | Chinese Science Bulletin2003，48，12： | 4 |
| 4 | Quantifying the effectiveness of SiO_2/Au light trapping nanoshells for thin film poly-Si solar cells显示文摘In order to enhance light absorption of thin film poly-crystalline silicon(TF poly-Si)solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory,the effective photon trapping flux(EPTF)and effective photon trapping efficiency(EPTE)were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures.The EPTF,EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer.With an optimum size and density of SiO2/Au nanoshell light trapping layer,the EPTE could reach up to 40%due to the enhancement of light trapping over a broad spectral range,especially from 500 to 800 nm. | BAI YiMing 1 ,WANG Jun 2 ,CHEN NuoFu 1,3 ,YAO JianXi 1 ,YIN ZhiGang 3 ,ZHANG Han 3 , ZHANG XingWang 3 ,HUANG TianMao 3 ,WANG YanShuo 3 &YANG XiaoLi 3 1School of Renewable Energy Engineering,North China Electric Power University,Beijing 102206,China 2 National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912,Beijing 100083,China 3 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912,Beijing 100083,China | 2010 | Science China(Technological Sciences)2010，53，8： | 4 |
| 5 | Progress in Space Material Researches显示文摘New progress in the post researches on space grown materials, the development of experiment facilities, and the experiment techniques for space materials researches were introduced. Besides the conventional materials, such as alloys, semiconductors, and optical crystals, new materials have also been prepared on the ground. | CHEN Nuofu CHEN Wanchun LIU Yan HOU Yanfei LUO Xinghong HUANG Qing YU Yude | 2006 | 空间科学学报2006，26，z1： | 3 |
| 6 | Progress of Microgravity Material Research During the Period of 2007-2009显示文摘Orbital experimental researches on crystal growth of Mn-doped GaSb and Bi2Se0.21Te2.79 are briefly summarized.The space experiments were completed in September of 2007 on broad the Foton-M3 satellite of Russia.Ground-based researches on the solidification behaviors of Al-Al3Ni,AlAl2Cu,Ag-Cu eutectic,Al-Pb monotectic and Cu-Co peritectic alloys in a 50-meter-high drop tube were investigated.New experimental results on the ultrasonic field and the temperature recycling induced to chiral symmetry breaking of NaClO3 crystal also were reported in the present paper. | Chen Nuofu Bai Yiming Chen Wanchun Zhou Yanfei Luo Xinghong Yu Yude | 2010 | 空间科学学报2010，30，5： | 3 |
| 7 | Temperature dependent spectral response characteristic of Ⅲ-Ⅴ compound tandem cell显示文摘The GaInP/GaAs/Ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Temperature dependence of the spectral response measurements of the GaInP/GaAs/Ge tandem cell was performed by a quantum effi- ciency system at temperatures ranging from 25℃ to 160℃. The red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap nar-rowing with temperature. The short-circuit current densities (Jsc) of GaInP, GaAs and Ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 mA/cm2, re- spectively. The temperature coefficient of Jsc for the tandem cell was determined to be 8.9 μA/(cm2·℃), and the corresponding temperature coefficient of the open-circuit voltage deduced from the se- ries-connected model was -6.27 mV/℃. | LIU Lei CHEN NuoFu WANG Yu BAI YiMing CUI Min GAO FuBao | 2009 | Chinese Science Bulletin2009，54，3： | 2 |
| 8 | Content analyses in GaMnAs by double-crystal X-ray diffraction显示文摘A model for analyzing point defects in com-pound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was estab-lished. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed. | CHEN Nuofu XIU Huixin YANG Junling WU Jinling ZHONG Xingru LIN Lanying | 2002 | Chinese Science Bulletin2002，47，4： | 2 |
| 9 | Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell显示文摘GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition(MOCVD) technique.Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160 ℃.The results indicate that the quantum ef-ficiencies of the subcells increase slightly with the increasing temperature.And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature,which are consistent with the viewpoint of energy gap narrowing effect.The short-circuit current density tem-perature coefficients dJsc/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 μA/cm2/℃ from the quantum efficiency data,respectively.And the open-circuit cell voltage temperature coefficients dVoc/dT calculated based on a theoretical equation are-2.4 mV/℃ and-2.1 mV/℃ for GaInP subcell and GaAs subcell. | LIU Lei CHEN NuoFu BAI YiMing CUI Ming ZHANG Han GAO FuBao YIN ZhiGang ZHANG XingWang | 2009 | Science China(Technological Sciences)2009，52，5： | 2 |
| 10 | Ag nanoparticles preparation and their light trapping performance显示文摘Ag nanoparticles were fabricated on Si substrates by radio-frequency magnetron sputtering and thermal annealing treatments.It was found that Ag nanoparticles are ellipsoid at low annealing temperature,but the axis ratio decreases with the increase of annealing temperature,and a shape transformation from ellipsoid to sphere occurs when the temperature increases to a critical point.The experimental results showed that the surface plasmon resonances depend greatly on the nanoparticles'shape and size,which is in accordance with the theoretical calculation based on discrete dipole approximation.The results of forward-scattering efficiency(FSE) and light trapping spectrum(LTS) showed that Ag nanoparticles annealed at 400°C could strongly enhance the light harvest than those annealed at 300 and 500°C,and that the LTS peak intensity of the former is 1.7 and 1.5 times stronger than those of the later two samples,respectively.The conclusions obtained in this paper showed that Ag ellipsoid nanoparticles with appropriate size is more favorable for enhancing the light trapping. | BAI YiMing WANG Jun YIN ZhiGang CHEN NuoFu ZHANG XingWang FU Zhen YAO JianXi LI Ning HE HaiYang GULI MiNa | 2013 | Science China(Technological Sciences)2013，56，1： | 2 |
| 11 | Frequency regulation in alternation-current transports across metal to insulator transitions of thin film correlated perovskite nickelates显示文摘Although the metal to insulator transition(MIT)observed in d-band correlated metal oxides enables promising applications(e.g.,correlated logical devices and Mottronic devices),its present recognition is mainly limited on the direct current(DC)electrical transports.Up to date,the MIT from the perspective of alternation current(AC)transport and its potential electronic applications remains yet unclear.Herein,we demonstrate the frequency(f_(AC))dependence in the impedance(Z=Z’+iZ″)of typical MIT materials,such as thin film rare-earth nickelates(Re NiO_(3)),across the critical MIT temperature(T_(MIT)).Apart from the abrupt change in the impedance modulus(|Z|)across the critical temperature(T_(MIT))similar to the DC transport,the MIT also triggers non-continuous variation in the impedance phase(θ),and this enables the f_(AC)-regulations in the Z’-T tendencies(Z’=|Z|cosθ).At the critical f_(AC) range(e.g.,104-106 Hz),the con-versing variations in|Z|-T and cosθ-T across T_(MIT) result in non-monotonic delta-shape Z’-T tendency in Sm_(x) Nd_(1-x) NiO_(3),the full width half maximum of which is effectively narrowed compared to the situation with the absence of MIT.Further imparting lower or higher f_(AC) elevate the domination in|Z|-T and cosθ-T,respectively,but also enables abrupt Z’-T tendencies across T_(MIT) showing negative temperature coefficient of resistance(NTCR)or positive temperature coefficient of resistance(PTCR).By introducing f_(AC) as a new freedom,the MIT behavior can be more comprehensively regulated electronically,and this extends the vision in exploring the new electronic applications based on the correlated MIT materials from the AC perspective. | Haifan Li Fanqi Meng Yi Bian Xuanchi Zhou Jiaou Wang Xiaoguang Xu Yong Jiang Nuofu Chen Jikun Chen | 2023 | Journal of Materials Science & Technology2023，，17： | 1 |
| 12 | Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler显示文摘Depth profiles of carrier concentrations in Ga-MnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s). | ZHANG Xiulan ZHANG Fuqiang SONG Shulin CHEN Nuofu WANG Zhanguo LIN Lanying | 2002 | Chinese Science Bulletin2002，47，21： | 1 |
| 13 | Investigation of Mn-Doped Si Films Prepared by Magnetron Cosputtering显示文摘 | Liu Lifeng Chen Nuofu Wang Yi | 2006 | J Cryst Growth2006，291，： | 1 |
| 14 | Structural and Magnetic Properties of Insulating Znl-x CoxO Thin Films 显示文摘 | Y IN Zhigang CHEN Nuofu CHAI Chunlin | 2004 | Appl Phys Lett2004，96，： | 1 |
| 15 | P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering显示文摘 | P Wang NuoFu Chen Z G Yin | 2006 | Applied Physics Letters2006，88，15： | 1 |
| 16 | 显示文摘 | Zhou Jian-ping Chen Nuofu Zhang Fuqiang | 2002 | Journal of Crystal Growth2002，242，： | 1 |
| 17 | 显示文摘 | Zhou Jianping Chen Nuofu Song Shulin | 2003 | Acta PhysicaSinica2003，52，6： | 1 |
| 18 | 显示文摘 | Yang Junling Chen Nuofu Liu Zhikai | 2001 | Journal of Crystal Growth2001，226，： | 1 |
| 19 | As-doped p- type ZnO films by sputtering and thermal diffusion process 显示文摘 | Peng Wang Nuofu Chen Zhigang Yin | 2006 | Journal of Applied Physics2006，100，4： | 1 |
| 20 | 显示文摘 | Yin Zhigang Chen Nuofu Chai Chunlin | 2004 | J Appl Phys2004，96，： | 1 |
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