5篇
您的检索式：作者名="Chunsen Sun"
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| 1 | Nitrogen-doped Co_(3)O_(4) nanowires enable high-efficiency electrochemical oxidation of 5-hydroxymethylfurfural显示文摘Developing highly efficient and cost-effective catalysts for electrochemically oxidizing biomass-derived 5-hydroxymethylfurfural(HMF)into value-added 2,5-furandicarboxylic acid(FDCA)is of great importance.Herein,we report a controllable nitrogen doping strategy to significantly improve the catalytic activity of Co_(3)O_(4)nanowires for highly selective electro-oxidation of HMF into FDCA.The nitrogen doping leads to the generation of defects including nitrogen dopants and oxygen vacancies in Co_(3)O_(4)nanowires,which is conducive to the formation of catalytically active sites.As a result,the electro-oxidation potential for HMF is only 1.38 V(vs.RHE)when the current density reaches 50 mA/cm^(2).More importantly,the conversion rate of HMF is as high as 99.5%,and the yield of FDCA is up to 96.4%. | Mengxiao Sun Yue Wang Chunsen Sun Yan Qi Jia Cheng Yumei Song Lixue Zhang | 2022 | Chinese Chemical Letters2022，33，1： | 2 |
| 2 | Determining multiple steady-state ZCS operating points of a switch-mode eontaetless power transfer system显示文摘 | Tang Chunsen Sun Yue Su Yugang | 2009 | IEEE Transactions on Power Electronics2009，24，2： | 1 |
| 3 | Determining multiple steady-state ZCS operating points of a switch-mode contactless power transfer system显示文摘 | Tang Chunsen Sun Yue Su Yugang | 2009 | IEEE Transactions on Power Electronics2009，24，2： | 1 |
| 4 | Determining multiple steady-state ZCS operating points of a switch-mode contactless power transfer system显示文摘 | Tang Chunsen Sun Yue Su Yugang | 2009 | IEEE Transactions on Power Electronics2009，24，2： | 1 |
| 5 | Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS_(2)-channel transistor显示文摘Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big data.In addition,the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance matching.This report proposes a 20 ns programme flash memory with 10^(8) self-rectifying ratios based on a 0.65 nm-thick MoS_(2)-channel transistor.A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling layer.In addition,the large rectification ratio and low ideality factor(n=1.13)facilitate the application of the MoS_(2)-channel flash memory as a bit-line select transistor.Finally,owing to the ultralow MoS_(2)/h-BN heterojunction capacitance(50 fF),the memory device exhibits superior performance as a high-frequency(up to 1 MHz)sine signal rectifier.These results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications. | Liwei Liu Yibo Sun Xiaohe Huang Chunsen Liu Zhaowu Tang Senfeng Zeng David Wei Zhang Shaozhi Deng Peng Zhou | 2022 | Materials Futures2022，1，2： | 0 |
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