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| 1 | Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors显示文摘For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LBIC microscopy, also generally called photocurrent mapping(PC mapping), can provide spatially resolved information about local electrical properties and p-n junction formation in photovoltaic infrared(including visible light) photodetectors from which it is possible to extract material and device parameters such as junction area, junction depth, diffusion length, leakage current position and minority carrier diffusion length etc. This paper presents a comprehensive review of research background, operating principle, fundamental issues, and applications of LBIC or PC mapping. | QIU WeiCheng HU WeiDa | 2015 | Science China(Physics,Mechanics & Astronomy)2015，58，2： | 15 |
| 2 | Ultrafast and broadband photodetectors based on a perovskite/organic bulk heterojunction for large-dynamic-range imaging显示文摘Organic-inorganic hybrid perovskite(OIHP)photodetectors that simultaneously achieve an ultrafast response and high sensitivity in the near-infrared(NIR)region are prerequisites for expanding current monitoring,imaging,and optical communication capbilities.Herein,we demonstrate photodetectors constructed by OIHP and an organic bulk heterojunction(BHJ)consisting of a low-bandgap nonfullerene and polymer,which achieve broadband response spectra up to 1μm with a highest external quantum efficiency of approximately 54%at 850 nm,an ultrafast response speed of 5.6 ns and a linear dynamic range(LDR)of 191 dB.High sensitivity,ultrafast speed and a large LDR are preeminent prerequisites for the practical application of photodetectors.Encouragingly,due to the high-dynamicrange imaging capacity,high-quality visible-NIR actual imaging is achieved by employing the OIHP photodetectors.We believe that state-of-the-art OIHP photodetectors can accelerate the translation of solution-processed photodetector applications from the laboratory to the imaging market. | Chenglong Li Hailu Wang Fang Wang Tengfei Li Mengjian Xu Hao Wang Zhen Wang Xiaowei Zhan Weida Hu Liang Shen | 2020 | Light(Science & Applications)2020，9，1： | 13 |
| 3 | Effect of ZrO_2 Content on the Properties of Diamond Grinding Wheel Vitrified Bond显示文摘The effect of ZrO2 content on the performance of vitrified bond was discussed. The results showed that when the ZrO2 content was less than 2 mol%, Zr4+ could enter into the glassy network as mending nets and agglomeration composition. In this case, with the increasing of ZrO2, the vitrified bond's bending strength increased and the expansion coefficient decreased. It was also found that the wetting angle between the vitrified bond and diamond got small because Zr4+ was enriched on diamond surface. When ZrO2 content was more than 2 mol%, a part of ZrO2 existing in vitrified bond as ZrO2 particles played the role in nucleating agents and promoting the separation of spodumene. When ZrO2 content was 3 mol%, the bending strength of the vitrified bond reached its maximum of 128 MPa and the wetting angle with the diamond reached its minimum of 37.6°. | 刘小磐 QIAO Ang WAN Long HU Weida SONG Dongdong LI Zheng YIN Zhongjie 潘瑞琨 | 2014 | Journal of Wuhan University of Technology(Materials Science)2014，29，1： | 7 |
| 4 | Progress and challenges in blocked impurity band infrared detectors for space-based astronomy显示文摘Astronomical detection at infrared wavelengths is crucial in astrophysics due to the critical information in this wavelength range.Blocked impurity band(BIB) infrared detectors are desirable for space-based astronomical observation due to their broad response range, low dark currents, high quantum efficiencies, and excellent radiation resistance. In this review, typical BIB device structures and device physics development are first introduced. Subsequently, we discuss progress in Si-based BIB detectors with different doping types and emphasize their applications in space-based infrared detection. Additionally, we discuss recent efforts on pixel performance optimization, response extension, and higher operating temperature devices. Finally,we conclude by proposing the challenges and perspectives of BIB detectors with improved detection performances. | Yunlong Xiao He Zhu Ke Deng Peng Wang Qing Li Ting He Tao Zhang Jinshui Miao Ning Li Wei Lu Ning Dai Weida Hu | 2022 | Science China(Physics,Mechanics & Astronomy)2022，65，8： | 4 |
| 5 | Pristine PN junction toward atomic layer devices显示文摘In semiconductor manufacturing,PN junction is formed by introducing dopants to activate neighboring electron and hole conductance.To avoid structural distortion and failure,it generally requires the foreign dopants localize in the designated micro-areas.This,however,is challenging due to an inevitable interdiffusion process.Here we report a brand-new junction architecture,called'layer PN junction',that might break through such limit and help redefine the semiconductor device architecture.Different from all existing semiconductors,we find that a variety of van der Waals materials are doping themselves from n-to p-type conductance with an increasing/decreasing layer-number.It means the capability of constructing homogeneous PN junctions in monolayers'dimension/precision,with record high rectification-ratio(>10^(5))and low cut-off current(<1 pA).More importantly,it spawns intriguing functionalities,like gate-switchable-rectification and noise-signal decoupled avalanching.Findings disclosed here might open up a path to develop novel nanodevice applications,where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality. | Hui Xia Man Luo Wenjing Wang Hailu Wang Tianxin Li Zhen Wang Hangyu Xu Yue Chen Yong Zhou Fang Wang Runzhang Xie Peng Wang Weida Hu Wei Lu | 2022 | Light(Science & Applications)2022，11，7： | 4 |
| 6 | Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe显示文摘二维(2D ) 材料吸引了实质的注意在电子并且有灵活、透明、高度悦耳的优异优点的 optoelectronic 应用。当时,无差距的 graphene 展出极端宽带、快的 photoresponse 半导体的瞬间 2 和门高展出的 2D 敏感和悦耳的 responsivity 到可见的光。然而,设备收益和重覆性打电话让进一步的改进完成大规模一致性。这里,我们与 28.4 厘米 2/(V0 的高洞活动性报导晶片规模门的 layer-by-layer | Xiang Yuan Lei Tang Peng Wang Zhigang Chen Yichao Zou Xiaofeng Su Cheng Zhang Yanwen Liu Weiyi Wang Cong Liu Fansheng Chen Jin Zou Peng Zhou Weida Hu Faxian Xiu | 2015 | Nano Research2015，8，10： | 4 |
| 7 | A versatile photodetector assisted by photovoltaic and bolometric effects显示文摘The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors.However,the limited exploitation of basic properties makes it difficult for devices to stand out.Here,we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake.Vanadium dioxide is a classical semiconductor with a narrow bandgap,a high temperature coefficient of resistance,and phase transformation.Molybdenum ditelluride,a typical two-dimensional material,is often used to construct optoelectronic devices.The heterostructure can realize three different functional modes:(i)the p-n junction exhibits ultrasensitive detection(450 nm-2μm)with a dark current down to 0.2 pA and a response time of 17μs,(ii)the Schottky junction works stably under extreme conditions such as a high temperature of 400 K,and(iii)the bolometer shows ultrabroad spectrum detection exceeding 10μm.The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation(LWIR).This type of photodetector combines versatile detection modes,shedding light on the hybrid application of novel and traditional materials,and is a prototype of advanced optoelectronic devices. | Wei Jiang Tan Zheng Binmin Wu Hanxue Jiao Xudong Wang Yan Chen Xiaoyu Zhang Meng Peng Hailu Wang Tie Lin Hong Shen Jun Ge Weida Hu Xiaofeng Xu Xiangjian Meng Junhao Chu Jianlu Wang | 2020 | Light(Science & Applications)2020，9，1： | 3 |
| 8 | The association of grip strength with cardiovascular diseases and all-cause mortality in people with hypertension:Findings from the Prospective Urban Rural Epidemiology China Study显示文摘Background:Both hypertension and grip strength(GS)are predictors of mortality and cardiovascular disease(CVD),but whether these risk factors interact to affect CVD and all-cause mortality is unknown.This study sought to investigate the associations of GS with the risk of major CVD incidence,CVD mortality,and all-cause mortality in patients with hypertension.Methods:GS was measured using a Jamar dynamometer(Sammons Preston,Bolingbrook,IL,USA)in participants aged 3570 years from 12 provinces included in the Prospective Urban Rural Epidemiology China Study.Cox frailty proportional hazards models were used to examine the associations of GS and hypertension and the outcomes of all-cause mortality and CVD incidence/mortality.Results:Among 39,862 participants included in this study,15,964 reported having hypertension,and 9095 had high GS at baseline.After a median follow-up of 8.9 years(interquartile range,6.79.9 years),1822 participants developed major CVD,and 1250 deaths occurred(388 as a result of CVD).Compared with normotensive participants with high GS,hypertensive patients with high GS had a higher risk of major CVD incidence(hazard ratio(HR)=2.39;95%confidence interval(95%CI):1.863.06;p<0.001)or CVD mortality(HR=3.11;95%CI:1.596.06;p<0.001)but did not have a significantly increased risk of all-cause mortality(HR=1.24;95%CI:0.921.68;p=0.159).These risks were further increased if hypertensive participants whose GS level was low(major CVD incidence,HR=3.31,95%CI:2.604.22,p<0.001;CVD mortality,HR=4.99,95%CI:2.649.43,p<0.001;and all-cause mortality,HR=1.93,95%CI:1.472.53,p<0.001).Conclusion:The present study demonstrates that low GS is associated with the highest risk of major CVD incidence,CVD mortality,and all-cause mortality among hypertensive patients.High levels of GS appear to mitigate long-term mortality risk among hypertensive patients. | Weida Liu Darryl P Leong Bo Hu Lap AhTse Sumathy Rangarajan Yang Wang Chuangshi Wang Fanghong Lu Yindong Li Salim Yusuf Lisheng Liu Wei Li | 2021 | Journal of Sport and Health Science2021，10，6： | 2 |
| 9 | Hybrid heterojunctions based on 2D materials and 3D thin-films for high-performance photodetectors显示文摘Photodetectors,converting optical signals to electrical signals,play a significant role in our daily life.Two-dimensional(2D)materials,such as graphene and transition metal dichalcogenides(TMDs),have displayed excellent mechanical,optical,electric,thermal properties and have been proved to be appealing building blocks for optoelectronic applications.However,for the 2D material-based photodetectors,their responsivity,response speed,and detectivity,which | HeHai Fang WeiDa Hu | 2017 | Science China(Physics,Mechanics & Astronomy)2017，60，2： | 2 |
| 10 | Van der Waals two-color infrared photodetector显示文摘With the increasing demand for multispectral information acquisition,infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention.However,the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems.Here,we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths.This photodetector consists of vertically stacked back-to-back diode structures.The two-color signals can be effectively separated to achieve ultralow crosstalk of~0.05%by controlling the built-in electric field depending on the intermediate layer,which acts as an electron-collecting layer and hole-blocking barrier.The impressive performance of the two-color photodetector is verified by the specific detectivity(D^(*))of 6.4×10^(9)cm Hz^(1/2)W^(−1)at 3.5μm and room temperature,as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection. | Peisong Wu Lei Ye Lei Tong Peng Wang Yang Wang Hailu Wang Haonan Ge Zhen Wang Yue Gu Kun Zhang Yiye Yu Meng Peng Fang Wang Min Huang Peng Zhou Weida Hu | 2022 | Light(Science & Applications)2022，11，2： | 2 |
| 11 | Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires显示文摘As one of the most important narrow bandgap ternary semiconductors, GaAs1−xSbx nanowires (NWs) have attracted extensive attention recently, due to the superior hole mobility and the tunable bandgap, which covers the whole near-infrared (NIR) region, for technological applications in next-generation high-performance electronics and NIR photodetection. However, it is still a challenge to the synthesis of high-quality GaAs1−xSbx NWs across the entire range of composition, resulting in the lack of correlation investigation among stoichiometry, microstructure, electronics, and NIR photodetection. Here, we demonstrate the success growth of high-quality GaAs1−xSbx NWs with full composition range by adopting a simple and low-cost surfactant-assisted solid source chemical vapor deposition method. All of the as-prepared NWs are uniform, smooth, and straight, without any phase segregation in all stoichiometric compositions. The lattice constants of each NW composition have been well correlated with the chemical stoichiometry and confirmed by high-resolution transmission electron microscopy, X-ray diffraction, and Raman spectrum. Moreover, with the increase of Sb concentration, the hole mobility of the as-fabricated field-effect-transistors and the responsivity and detectivity of the as-fabricated NIR photodetectors increase accordingly. All the results suggest a careful stoichiometric design is required for achieving optimal NW device performances. | Jiamin Sun Mingming Han Meng Peng Lei Zhang Dong Liu Chengcheng Miao Jiafu Ye Zhiyong Pang Longbing He Hailu Wang Qing Li Peng Wang Lin Wang Xiaoshuang Chen Chongxin Shan Litao Sun Weida Hu Zai-xing Yang | 2021 | Nano Research2021，14，11： | 1 |
| 12 | De- pendence of Ion-Implant-Induced LBIC Novel Charac- terisitic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Ar- rays显示文摘 | Hu Weida Chen Xiaoshuang Ye Zhenhua | 2013 | IEEE Journal of selected topics in quantum e- lectronics 192013，，： | 1 |
| 13 | Effect of TiO2/A1203 film coated diamond abrasive particles by sol-gel technique 显示文摘 | Weida Hu Long Wan Xiaopan Liu | 2011 | Applied Surface Science2011，，257： | 1 |
| 14 | A gate-free MoS2 phototransistor assisted by ferroelectrics显示文摘During the past decades,transition metal dichalcogenides(TMDs) have received special focus for their unique properties in photoelectric detection.As one important member of TMDs,MoS2 has been made into photodetector purely or combined with other materials,such as graphene,ionic liquid,and ferroelectric materials.Here,we report a gate-free MoS2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)).In this device,the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope(PFM) probe with a positive or negative bias,which can turn the dipoles from disorder to be the same direction.Then,the MoS2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation.Moreover,the P(VDF-TrFE) segregates MoS2 from oxygen and water molecules around surroundings,which enables a cleaner surface state.As a photodetector,an ultra-low dark current of 10^–11 A,on/off ration of more than 10^4 and a fast photoresponse time of 120 μs are achieved.This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications. | Shuaiqin Wu Guangjian Wu Xudong Wang Yan Chen Tie Lin Hong Shen Weida Hu Xiangjian Meng Jianlu Wang Junhao Chu | 2019 | Journal of Semiconductors2019，40，9： | 1 |
| 15 | Accurate sim-ulation of emperature-dependent dark current in HgCdTe infrared detectors assisted by nalytical modeling显示文摘 | Weida Hu Xiaoshuang Chen Zhenhua Ye | | 0，，07： | 1 |
| 16 | Next-generation machine vision systems incorporating two-dimensional materials: Progress and perspectives显示文摘Machine vision systems(MVSs)are an important component of intelligent systems,such as autonomous vehicles and robots.However,with the continuous increase in data and new application scenarios,new requirements are put forward for the next generation of MVS.There is an urgent need to find new material systems to complement the existing semiconductor technology based on thin-film materials,and new architectures must be explored to improve efficiency.Because of their unique physical properties,two-dimensional(2D)materials have received extensive attention for use in MVSs,especially in biomimetic ones:the human visual system,which can process complex visual information with low power consumption,provides a model for next-generation MVSs.This review paper summarizes the progress and challenges of applying 2D material photodetectors in sense-memory-computational integration and biomimetic image sensors for machine vision. | Peisong Wu Ting He He Zhu Yang Wang Qing Li Zhen Wang Xiao Fu Fang Wang Peng Wang Chongxin Shan Zhiyong Fan Lei Liao Peng Zhou Weida Hu | 2022 | InfoMat2022，4，1： | 1 |
| 17 | Azcumte simulation of temperature-dependent dark current in HgCdTe infrared detectors assisted by analytical modeling显示文摘 | Hu Weida Chert Xiaoshuang Ye Zhenhua | 2010 | Journal of Electronic Materials2010，39，7： | 1 |
| 18 | Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure显示文摘 | Liang Jian Hu Weida Ye Zhenhua | 2014 | Journal of Applied Physics2014，115，18： | 1 |
| 19 | A 128× 128 long-wavelength/ mid-wavelength two-color HgCdTe infrared focal plane array detector with ultra-low spectral crosstalk显示文摘 | Hu Weida Ye Zhenhua Liao Lei | 2014 | Optics Letters2014，39，： | 1 |
| 20 | Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies显示文摘Atomically thin two-dimensional(2D)materials exhibit enormous potential in photodetectors because of novel and extraordinary properties,such as passivated surfaces,tunable bandgaps,and high mobility.High-performance photodetectors based on 2D materials have been fabricated for broadband,position,polarization-sensitive detection,and large-area array imaging.However,the current performance of 2D material photodetectors is not outstanding enough,including response speed,detectivity,and so forth.The way to further promote the development of 2D material photodetectors and their corresponding practical applications is still a tremendous challenge.In this article,these issues of 2D material photodetectors are analyzed and expected to be solved by combining micro-nano characterization technologies.The inherent physical properties of 2D materials and photodetectors can be accurately characterized by Raman spectroscopy,transmission electron microscopy(TEM),and scattering scanning near-field optical microscope(s-SNOM).In particular,the precise probe of lattice defects,doping concentration,and near-field light absorption characteristics can promote the researches of low-noise and high-responsivity photodetectors.Scanning photocurrent microscope(SPCM)can show the overall spatial distribution of photocurrent and analyze the mechanism of photocurrent.Photoluminescence(PL)spectroscopy and Kelvin probe force microscope(KPFM)can characterize the material bandgap,work function distribution and interlayer coupling characteristics,making it possible to design high-performance photodetectors through energy band engineering.These advanced characterization techniques cover the entire process from material growth,to device preparation,and to performance analysis,and systematically reveal the development status of 2D material photodetectors.Finally,the prospects and challenges are discussed to promote the application of 2D material photodetectors. | Fang Zhong Hao Wang Zhen Wang Yang Wang Ting He Peisong Wu Meng Peng Hailu Wang Tengfei Xu Fang Wang Peng Wang Jinshui Miao Weida Hu | 2021 | Nano Research2021，14，6： | 1 |
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