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| 1 | Design and fabrication of a SiN-Si dua卜layer optical phased array chip显示文摘A SiN-Si dual-layer optical phased array(OPA)chip is designed and fabricated.It combines the low loss of SiN with the excellent modulation performance of Si,which improves the performance of Si single-layer OPA.A novel optical antenna and an improved phase modulation method are also proposed,and a two dimensional scanning range of 96°×14°is achieved,which makes the OPA chip more practical. | PENGFEI WANG GUANGZHEN LUO YANG XU YAJIE LI YANMEI SU JIANBIN MA RUITING WANG ZHENGXIA YANG XULIANG ZHOU YEJIN ZHANG JIAOQING PAN | 2020 | Photonics Research2020，8，6： | 5 |
| 2 | Infuence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy显示文摘Zn1exCox O(x 0.05) thin films are deposited on sapphire(0001) substrates by laser-molecular beam epitaxy technique at different substrate temperatures. The structural, stress and morphology evolution features are investigated by means of X-ray diffraction and atomic force microscopy. The surface parameters of roughness exponent a, root mean square(RMS) roughness w and autocorrelation length x are calculated and the surface parameters are preliminarily analyzed. The values of a vary from 0.7 to 0.9. The RMS roughness w is less than 2.2 nm, and it increases with increasing T s from 300 to 400 C, and then decreases when T s is 500 C. The autocorrelation length x decreases monotonously with the increase in T s from 300 to 500 C, which indicates that the increase in T s restrains the spread of the surface fluctuations until T s is higher than 400 C. | Yunyan Liu Shanying Yang Gongxiang Wei Jiaoqing Pan Yuzhen Yuan Chuanfu Cheng | 2013 | Journal of Materials Science & Technology2013，29，12： | 3 |
| 3 | GCDeterminationofborneolinDingfukangⅠ显示文摘 | JIAOQ CHENYJ | 1997 | 中国药学杂志1997，32，2： | 1 |
| 4 | InP-based directly modulated monolithic integrated few-mode transmitter显示文摘A monolithic integrated few-mode transmitter comprising of two directly modulated distributed feedback lasers and a multimode-interference-coupler-based mode converter-multiplexer with 66% mode conversion efficiency was designed and demonstrated. A fundamental TE0 mode and a first-order TE1 mode were successfully generated from the transmitter, with the output power of 4 and 5.5 mW at a pump current of around 150 mA, respectively,at the common output port. The small signal modulation bandwidth of the TE0 and TE1 channels reached 17.4 and 14.7 GHz, respectively. Error-free 2 × 10-Gbit∕s direct modulation of the two-mode transmitter was demonstrated, with a power penalty of 4.3 dB between the TE0 mode and the TE1 mode at the bit error rate of 1 × 10^(-9). | ZHAOSONG LI DAN Lu YIMING HE FANGYUAN MENG XULIANG ZHOU JIAOQING PAN | 2018 | Photonics Research2018，6，5： | 1 |
| 5 | Ultra-compact tunable graphene-based plasmonic multimode interference power splitter in mid infrared frequencies显示文摘In this paper, we propose graphene-based plasmonic multimode interference power splitters with ultra-compact size working in mid infrared range. Further, the arbitrary-ratio 1×2 power splitter with a size of 140 nm×232 nm, where the splitting ratio can be tuned continuously from 1:1 to 100:0, is numerically demonstrated. Meanwhile, the graphene-based arbitrary-ratio 1×2 power splitters with different frequencies and chemical potentials are also investigated. The proposed multimode interference structure with a deep nanoscale footprint might be a fundamental component of the future high density integrated plasmonic circuit or on-chip plasmonic interconnect techniques. | Pingping QIU Weibin QIU Zhili LIN Houbo CHEN Yixin TANG Jiaxian WANG Qiang KAN Jiaoqing PAN | 2017 | Science China(Information Sciences)2017，60，8： | 1 |
| 6 | 4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects显示文摘A 4 –λ hybrid InGaAsP-Si evanescent laser array is obtained by bonding III–V distributed feedback lasers to a silicon on insulator(SOI) substrate using a selective area metal bonding technique. Multiple wavelengths are realized by varying the width of the III–V ridge waveguide. The threshold current is less than 10 mA for all wavelength channels under continuous-wave(CW) operation at room temperature, and the lowest threshold current density is 0.76 kA∕cm2. The side mode suppression ratio(SMSR) is higher than 40 dB for all wavelength channels when the injection current is between 20 mA and 70 mA at room temperature, and the highest SMSR is up to 51 dB. A characteristic temperature of 51 K and thermal impedance of 144°C/W are achieved on average.The 4 –λ hybrid InGaAsP-Si evanescent laser array exhibits a low threshold and high SMSR under CW operation at room temperature. The low power consumption of this device makes it very attractive for on-chip optical interconnects. | YAJIE LI HONGYAN YU WENGYU YANG CHAOYANG GE PENGFEI WANG FANGYUAN MENG GUANGZHEN LUO MENGQI WANG XULIANG ZHOU DAN LU GUANGZHAO RAN JIAOQING PAN | 2019 | Photonics Research2019，7，6： | 0 |
| 7 | Low fabrication cost wavelength tunable WG-FP hybrid-cavity laser working over 1.7μm显示文摘A wide wavelength tuning range and single-mode hybrid cavity laser consists of a square Whispering-Gallery(WG)microcavity and a Fabry–Pérot(FP)was introduced and demonstrated.A wavelength tuning range over 12.5 nm from 1760.87 to 1773.39 nm which was single-mode emitting was obtained with the side-mode suppression ratio over 30 dB.The hybrid cavity laser does not need grating etching and special epitaxial structure,which reduces the fabrication difficulty and cost,and shows the potential for gas sensing with absorption lines in this range. | Fangyuan Meng Hongyan Yu Xuliang Zhou Mengqi Wang Yejin Zhang Wenyu Yang Jiaoqing Pan | 2022 | Journal of Semiconductors2022，43，6： | 0 |
| 8 | Ⅲ–Ⅴ compound materials and lasers on silicon显示文摘Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers over the past few decades.Here we review three main methods of integration ofⅢ–Ⅴ materials on Si,namely direct growth,bonding,and selectivearea hetero-epitaxy.TheⅢ–Ⅴmaterials we introduced mainly include materials such as GaAs and InP.The lasers are mainly lasers of related communication bands.We also introduced the advantages and challenges of the three methods. | Wenyu Yang Yajie Li Fangyuan Meng Hongyan Yu Mengqi Wang Pengfei Wang Guangzhen Luo Xuliang Zhou Jiaoqing Pan | 2019 | Journal of Semiconductors2019，40，10： | 0 |
| 9 | A systematic assessment of hydroxyapatite nanoparticles used in the treatment of melanoma显示文摘Nano Research volume 13,pages2106–2117(2020)Cite this article 106 Accesses 1 Altmetric Metrics details Abstract Melanoma is a highly malignant skin tumor which is prone to recurrence and metastasis.Hydroxyapatite nanoparticles(nHAPs)were reported to possess a suppressive effect on proliferation of various tumor cells in vitro.This study aimed to assess in vitro and in vivo anti-tumor ability and biosafety of the nHAPs used in the treatment of melanoma.Three types of nHAPs with different morphology and crystallinity were synthesized.In vitro cell viability and proliferation studies demonstrated that all three types of nHAPs can inhibit viability and proliferation of A375 and SK-MEL-28 melanoma cells in a concentration-dependent manner.In addition,the rod-shape nHAPs with a crystallinity of 45.60%had the most prominent suppressive effect on the two melanoma cells tested.An important positive regulator of G1/S phase transition in cell cycle,Cyclin D1 protein,was reduced by nHAPs treatment in vivo.We further discovered that the migration ability of the nHAPs treated melanoma cells was greatly decreased.RNA sequencing result revealed that melanoma metastasis related genes were down-regulated by nHAPs,including MMP2,MMP14,ITGA9,ITGB3,ITGB4 and S100B.High concentration of nHAPs treatment in melanoma-bearing nude mice showed a strong inhibitory effect on tumor size and weight.Most importantly,hemolysis,electrolyte disturbance or inflammation response was not discovered in the experimental animals from nHAPs treated groups.We proved that the nHAPs synthesized in the current study has a selective effect to suppress melanoma tumor proliferation and was safe with regard to normal cells and tissue. | Zhongtao Li Jiaoqing Tang Hongfeng Wu Zhixin Ling Siyu Chen Yong Zhou Bo Guo Xiao Yang Xiangdong Zhu Lin Wang Chongqi Tu Xingdong Zhang | 2020 | Nano Research2020，13，8： | 0 |
| 10 | Asymmetric quantum well broadband thyristor laser显示文摘A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well(AQW) is fabricated by metal organic chemical vapor deposition(MOCVD). The 3-μm-wide Fabry–Perot(FP) ridge-waveguide laser shows an S-shape I-V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm(Δ_(-10) dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure. | Zhen Liu Jiaqi Wang Hongyan Yu Xuliang Zhou Weixi Chen Zhaosong Li Wei Wang Ying Ding Jiaoqing Pan | 2017 | Journal of Semiconductors2017，38，11： | 0 |
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