|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits显示文摘Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or Y.The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator.The CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs.Together with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated circuits.Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over 160.Two adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3000 cm2 V-1 s-1) and holes(3300 cm2 V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler. | ZHANG ZhiYong WANG Sheng PENG LianMao | 2012 | Chinese Science Bulletin2012，57，2： | 7 |
| 2 | Performance projections for ballistic carbon nanotube FinFET at circuit level显示文摘为碳 nanotube (CNT ) 的新奇三维的设备结构鳍地效果晶体管(FinFET ) 被建议并且评估。我们包括繁殖延期,全部的力量驱散,和精力延期产品(电子数据处理) 用三个表演度量标准在电路水平在一个 22-nm 节点与 Si FinFET 相比评估了 CNT FinFET 的潜力。与 Si FinFET 相比, CNT FinFET 处于在更高全部的功率驱散从它的几乎更大的当前的密度而且结果产生的速度和电子数据处理介绍明显的优点,特别在低阀值电压(V th = 1/3V dd ) 。在 V th 能有效地贡献漏电流和力量驱散的重要抑制,然后明显的优化处于速度与可接受的牺牲在 EDP 被获得。特别地,有优化阀值电压的 CNT FinFETs 能在低供应电压下面在 Si FinFETs 上提供约 50 次的一个电子数据处理优点(V dd = 0.4 V ) ,为 CNT 基于 FinFET 的集成电路建议大潜力。 | Panpan Zhang Chenguang Qiu Zhiyong Zhang Li Ding Bingyan Chen Lianmao Peng | 2016 | Nano Research2016，9，6： | 6 |
| 3 | Realization of low contact resistance close to theoretical limit in graphene transistors显示文摘认识到在 graphene 和金属电极之间的低接触抵抗为造高效的 graphene 设备仍然是著名挑战。在这个工作,我们试图在 graphene 晶体管减少接触抵抗并且进一步探索在 graphene 和金属接触之间的抵抗限制。在房间温度的 Pd/graphene 接触抵抗在 100 ?? 下面被减少 ? ?? 汣獡 ? 愢瀭畬 ? 汰獵?? 猯'T ￣慮潮慰瑲捩敬 ? 敤潣慲整 ? 湯吠佩猼'T 挠慬獳∽ ? 汰獵瀭畬 ? 资 ? ?? 渠湡景扩牥 ? 湥 'L 敬 ? 桴 ? ?捣獥晳汵椠瑮来慲楴湯漠 ? 桴 ? 楢慮祲挠浯潰楳整椠瑮 ? 慢瑴牥敩 ? 潴愠摤敲獳猠牴 ' 壮霊 `? 瑳 'L 汩瑩 ? 湡 ? 潬 ? 慣慰楣吗? | Hua Zhong Zhiyong Zhang Bingyan Chen Haitao Xu Dangming Yu Le Huang Lianmao Peng | 2015 | Nano Research2015，8，5： | 5 |
| 4 | Large-area growth of ultra-high-density single-walled carbon nanotube arrays on sapphire surface显示文摘获得高密度的、大区域的围单人赛的碳 nanotube (SWNT ) 的可伸缩的途径穿的 A 为在实际电子设备认识到 SWNT 的完整的潜力是必要的;这仍然是大挑战。这里,我们由联合特洛伊催化剂在蓝宝石表面上为 ultra-high-density SWNT 数组的大区域的生长报导一个改进合成方法(免除了底层,保证超离频密度) 与瞬间 nanoparticles (在表面上装载了,稳定释放特洛伊催化剂) 作为合作催化剂。稠密、非常排列的 SWNT 盖住全部底层,本地密度象 160 tubes/m 一样高。在如此的数组上造的地效果晶体管(联邦货物税) 在排水管来源电压给了 488 A/m 的产量电流密度(V ds )= 门来源电压(V gs )=2 V,相应于在传导力上每 244 S/m 的宽度。这些结果在 SWNT 的控制结构的生长证实特洛伊瞬间催化剂的潜在的应用的宽范围。 | Lixing Kang Yue Hu Hua Zhong Jia Si Shuchen Zhang Qiuchen Zhao Jingjing Lin Qingwen Li Zhiyong Zhang Lianmao Peng Jin Zhang | 2015 | Nano Research2015，8，11： | 5 |
| 5 | Quality metrology of carbon nanotube thin films and its application for carbon nanotube-based electronics显示文摘Large area,highly uniform,and density controllable carbon nanotube(CNT)films,either well-aligned or random network,are required for practical application of CNT-based electronics.Mass production methods for such CNT films and corresponding quality metrology,which are critical for pushing the CNT-based transistor technology to manufacturing,should be developed in advance.Much progress has been made on fabrication of CNT films;however,there still lacks a metrology for thoroughly quantifying their quality until now.In this paper,through comparing study of CNT films fabricated by dip-coating(DC)and direct deposition(DD)methods,local anisotropy in the film is revealed to impact the performance uniformity of devices so fabricated in a spatial scale dependent manner.The anisotropy effect should be taken into account for the quality characterization of CNT films,which was not noticed in previous studies.Based on these findings,we propose a four-parameter metrology to quantify the overall quality of the CNT films,which includes the local tube density(DL),global density uniformity(Cv),local degree of order(OL),and the relative tube proportion in a certain orientation(Pθ)at a location.The four-parameter characterization and corresponding device performance confirm DC films are superior to DD films for practical application.The four-parameter metrology is not only powerful for overall quality evaluation of CNT films,but also able to predict the fluctuation of devices’performance.Therefore,this material metrology is important for devices and circuits design and valuable for pushing the CNT-based transistor technology forward. | Jie Zhao Lijun Shen Fang Liu Pan Zhao Qi Huang Hua Han Lianmao Peng Xuelei Liang | 2020 | Nano Research2020，13，6： | 4 |
| 6 | Large-area and highly uniform carbon nanotube film for nigh-performance thin film transistors显示文摘 | Guodong Dong Jie Zhao Lijun Shen Jiye Xia Hu Meng Wenhuan Yu Qi Huang Hua Han Xuelei Liang Lianmao Peng | 2018 | Nano Research2018，11，8： | 3 |
| 7 | Reliability tests and improvements for Sc-contacted n-type carbon nanotube transistors显示文摘钪(Sc ) 联系了 n 类型碳 nanotube (CNT ) 有背和最高门的结构的完成地的晶体管(联邦货物税) 被制作了,并且他们在空中的稳定性被调查。氧和水分子可以影响 nanotube 隧道和 Sc/nanotube 接触,这被显示出,导致败坏的接触质量和设备性能。与 n 类型碳 nanotube 联邦货物税的不稳定性联系的这些否定效果能通过使钝化被消除由 atomic-layer-deposition 的薄层的 CNT 设备成年 Al2O3 绝缘体。在钝化以后, n 类型碳 nanotube 联邦货物税被显示甚至在被测试并且暴露了通风超过 146 天,然后光滑得多的输出以后展出优秀空气稳定性特征和减少的门电压从 1 ~ 0.1 V 的磁滞现象被表明什么时候与没有钝化的设备相比。持续电源开著测试也为至少 10 h 在大门应力和在空中当前的高排水管下面在使钝化的 CNT 联邦货物税上被执行,揭示空设备降级有时平的改进性能。这些结果答应那 CNT 设备在空中是可靠的并且可以在实际应用被使用使钝化。 | Shibo Liang Zhiyong Zhang Tian Pei Ruoming Li Yan Li Lianmao Peng | 2013 | Nano Research2013，6，7： | 3 |
| 8 | Transient response of carbon nanotube integrated circuits显示文摘所有的频率反应的速度出版了碳 nanotube (CNT ) 集成电路(IC ) 远离那被预言。CNT IC 的短暂反应通过联合系统地被探索试验性并且模拟方法。互补 field-effect-transistor (联邦货物税) 基于 inverters 在单个半导体的 CNT 上被制作,并且动态反应测量显示它能仅仅以出人意料地低的速度工作,即与 30 s 的大繁殖延期。由于 CNT 联邦货物税的更大的产量抵抗,寄生电容的存在应该导致大部分更大抵抗电容(RC ) 在 Si IC 比那推迟。通过联合模拟和试验性的大小的详细分析,在 CNT 联邦货物税 IC 的实际速度下面拖的几种寄生电容一个一个地被识别,并且他们中的每通过 RC 延期在不同层次限制速度。从测量系统的寄生电容是主导的,这被发现,并且大 RC 延期降低 CNT 联邦货物税逻辑电路的速度到仅仅类似于试验性的结果的几 kHz。各种各样的优化计划被建议并且示威了最小化寄生电容的效果,并且因此改进 CNT IC 的速度。 | Panpan Zhang Yingjun Yang Tian Pei Chenguang Qiu Li Ding Shibo Liang Zhiyong Zhang Lianmao Peng | 2015 | Nano Research2015，8，3： | 2 |
| 9 | Doping-free carbon nanotube optoelectronic devices显示文摘Semiconducting carbon nanotubes(CNTs) possess outstanding electrical and optical properties because of their special one-dimen-sional(1D) structure.CNTs are direct bandgap materials,which makes them ideal for use in optoelectronic devices,e.g.light emitters and light detectors.Excitons determine their light absorption and light emission processes due to the strong Coulomb interactions between electrons and holes in CNTs.In this paper,we review recent progress in CNT photodetectors,photovoltaic devices and light emitters.In particular,we focus on the doping-free CNT optoelectronic devices developed by our group in recent years. | WANG Sheng ZHANG ZhiYong PENG LianMao | 2012 | Chinese Science Bulletin2012，57，2： | 2 |
| 10 | Speeding up carbon nanotube integrated circuits through three-dimensional architecture显示文摘Semiconducting carbon nanotube (CNT) field effect transistor (FET) is attractive for constructing three-dimensional (3D) integrated circuits (ICs) because of its low-temperature processes and low power dissipation. However, CNT based 3D ICs reported usually suffered from lower performance than that of monolayer CNT ICs. In this work, we develop a 3D IC technology through integrating multi-layer high performance CNT film FETs into one chip, and show that it promotes the operation speed of CNT based 3D ICs considerably. We also explore the advantage on ICs of 3D architecture, which brings 38% improvement on speed over two-dimensional (2D) one. Specially, we demonstrate the fabrication of 3D five-stage ring-oscillator circuits with an oscillation frequency of up to 680 MHz and stage delay of 0.15 ns, which represents the highest speed of 3D CNT-based ICs. | Yunong Xie Zhiyong Zhang Donglai Zhong Lianmao Peng | 2019 | Nano Research2019，12，8： | 1 |
| 11 | Single wall carbon nanotubes and their electrical properties显示文摘 | Zengquan Xue Weimin Liu Shimin Hou Zujin Shi Zhennan Gu Hongwen Liu Xingyu Zhao Zhaoxiang Zhang Mianlei Wu Lianmao Peng Quande Wu | 2000 | Science in China Series A: Mathematics2000，，11： | 1 |
| 12 | High-yield and low-cost separation of high-purity semiconducting single-walled carbon nanotubes with closed-loop recycling of raw materials and solvents显示文摘Semiconducting single-walled carbon nanotubes (s-SWCNTs) are the foundation of CNT-based electronics and optoelectronics. For practical applications, s-SWCNTs should be produced with high purity, high structural quality, low cost, and high yield. Currently conjugated polymer wrapping method shows great potential to fulfill these requirements due to its advantages of simple operation process, high purity separation, and easy scaling-up. However, only a small portion of both CNTs and polymers go into the final solution, and most of them are discarded after a single use, resulting in high cost and low yield. In this paper, we introduce a closed-loop recycling strategy, in which raw materials (CNTs and polymers) and solvents were all recycled and reused for multiple separation cycles. In each cycle, high-purity (> 99.9%) s-SWCNTs were obtained with no significant change of structural quality. After 7 times of recycling and separation, the material cost was reduced to ∼ 1% in comparison with commercially available products, and total yield was increased to 36% in comparison with 2%–5% for single cycle separation. Our proposed closed-loop recycling strategy paves the way for low-cost and high-yield mass production of high-quality s-SWCNTs. | Fang Liu Xingxing Chen Haoming Liu Jie Zhao Meiqi Xi Hongshan Xiao Tongkang Lu Yu Cao Yan Li Lianmao Peng Xuelei Liang | 2021 | Nano Research2021，14，11： | 1 |
| 13 | Elec- tron emission from a two-dimensional crystal with atomic thickness 显示文摘 | WEI Xianlong CHEN Qing PENG Lianmao | 2013 | API Advances2013，3，4： | 1 |
| 14 | Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage显示文摘A small bandgap and light carrier effective mass(mo)lead to obv ous ambipolar transport behavior in carbon nanotube(CNT)fild-effect transistors(FE Ts),including a high off-state current and severe degradation of the subthreshold swing(SS)with increasing drain bias voltage.We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-μum channel length,i.e.,suppressing the ambipolar behavion while maintaining high on-state performance by adopting a feedback gate(FBG)structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current.Sub-400-nm-channel-length FETs with a FBG structure statistially present a high on/off ratio of up to 10*and a sub-200 mV/dec SS under a high drain bias of up to-2 V whle maintaining a high on-state current of 0.2 mA/μm or a peak transconductance of 0.2 mS/um.By lowering the supply voltage to 1.5 V,FBG CNT-fim FETs can meet the requirement of standard-pertormance ultra large scale integrated circuits(ULSICs).Therefore,the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property. | Lijun Liu Chenyi Zhao Li Ding Lianmao Peng Zhiyong Zhang | 2020 | Nano Research2020，13，7： | 1 |
| 15 | Nanoscale color sensors made on semiconducting multi-wall carbon nanotubes显示文摘亚微米颜色传感器被开发,用碳 nanotubes (CNT ) 。颜色传感器由一连串的二根光电二极管组成与不同光谱回答,使用制作在单个半导体的双墙 CNT 上控制了电的剥离开和没有药的技术。CNT 光电二极管展出内在的女人光谱从 640 ~ 2,100 nm,超过 60 dB 的大线性动态范围,和亚微米象素的回答缩放。这个方法探索多墙 CNT 的唯一的性质,并且可以乐意地为高效颜色传感器数组的大规模制造被使用,当平行多墙 CNT 的数组变得可得到时。 | Nan wei Huixin Huang Yang Liu Leijing Yang Fanglin Wang Huanhuan Xie Yingying Zhang Fei Wei Sheng Wang Lianmao Peng | 2016 | Nano Research2016，9，5： | 0 |
| 16 | Studies of Structure Evolution of Nanostructured Hf_(11)Ni_(89) Alloy显示文摘A nanostructured Hf11Ni89 ribbon sample was prepared by melt-spinning. It was found that the as-quenched sample is composed of a major HfNi5 compound nanophase and an interfacial magnetic Ni(Hf) solid solution phase. The structure evolution of the sample was studied by using X-ray difFraction (XRD), transmission electron microscopy (TEM), difFerential scanning calorimetry (DSC), resistivity and magnetothermal analysis. Upon heating, a second precipitation process of the Ni(Hf) phase prior to grain growth wa5 detected by means of both structural analysis and physical property measurements. The measurement results are discussed based on the relationship between microstructure and physical properties. | Zhenfu DONG and Lianmao PENG(Beijing Lab. of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics,Chinese Academy of Sciences, P.O.Box 2724, Beijing 100080, China)Ke LU and Zhuangqi HU(State Key Lab. for RSA, Institute of Meta | 1998 | Journal of Materials Science & Technology1998，14，3： | 0 |
| 17 | Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide显示文摘The selective growth of semiconducting single-walled carbon nanotubes(s-SWCNTs)is of great importance in many high-end applications represented by nanoelectronics.Here,we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature(ST)-cut quartz with bimetallic catalysts using carbon monoxide(CO)as both catalyst reductant and single component carbon feedstock under atmospheric pressure.The disproportionation of CO produces not only carbon species for SWCNT growth but also CO_(2),which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes.The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays.At the optimized conditions,we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97%using CoCu catalysts,confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices.This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts,such as FeCu and CoMn.It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices. | Xue Zhao Ningfei Gao Zeyao Zhang Qidong Liu Jian Sheng Yijie Hu Ruoming Li Haitao Xu Lianmao Peng Yan Li | 2023 | Nano Research2023，16，11： | 0 |
| 18 | Charge trap-based carbon nanotube transistor for synaptic function mimicking显示文摘Brain-inspired neuromorphic computing is expected for breaking through the bottleneck of the computer of conventional von Neumann architecture. To this end, the first step is to mimic functions of biological neurons and synapses by electronic devices. In this paper, synaptic transistors were fabricated by using carbon nanotube (CNT) thin films and interface charge trapping effects were confirmed to dominate the weight update of the synaptic transistors. Large synaptic weight update was realized due to the high sensitivity of the CNTs to the trapped charges in vicinity. Basic synaptic functions including inhibitory post-synaptic current (IPSC), excitatory post-synaptic current (EPSC), spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF) were mimicked. Large dynamic range of STDP (> 2,180) and low power consumption per spike (∼ 0.7 pJ) were achieved. By taking advantage of the long retention time of the trapped charges and uniform device-to-device performance, long-term image memory behavior of neural network was successfully imitated in a CNT synaptic transistor array. | Jie Zhao Fang Liu Qi Huang Tongkang Lu Meiqi Xi Lianmao Peng Xuelei Liang | 2021 | Nano Research2021，14，11： | 0 |
| 19 | Research on the Dilemma and Countermeasures of Graduate Student Recruitment Publicity in University Branch Area-Based on Harbin Institute of Technology(Weihai)显示文摘Graduate student recruitment publicity is a very important link in graduate student recruitment,the quality of students directly affects the quality of graduate education.Taking Harbin Institute of Technology(Weihai)as the research object,this paper analyzes the internal and external factors affecting the improvement of graduate student quality in the branch campus,and carries out the corresponding countermeasures,puts forward the propaganda strategy of all-round research and recruitment,and effectively improves the quality of graduate student in the branch campus. | Lianmao Yang Yiqun Liu Zaixian Chen | 2022 | 教育研究前沿(中英文版)2022，12，3： | 0 |
| 20 | Analysis and Suggestions of the Satisfaction of Postgraduate Education in Engineering Universities —Take Harbin Institute of Technology (Weihai) for Example显示文摘Accelerating the development of students is the basic goal of postgraduate talent cultivation.The final research results,employment situation and satisfaction of postgraduate students with school education are more important indicators of the quality of talent cultivation in a university.For having a deeper understanding of the satisfaction of postgraduates in Harbin Institute of Technology(Weihai)in terms of motivation,tutor situation,management service and employment situation,a questionnaire survey was conducted on postgraduates.The survey results show that the overall satisfaction of postgraduates is high.In terms of studying motivation,most postgraduates think that their majors are more related to employment;in terms of professors,most of them can get along well with their professors and learn from the advantages of their professors;in terms of school management,they respond well to the'library',but think that the'dormitory'and'canteen'need further improvement;in terms of employment,most of postgraduates choose to be employed,while a few of them choose to further their studies,most of which have applied to study in domestic or foreign universities. | Lianmao Yang Yiqun Liu Xiaoguo Song Bingfeng Liu | 2022 | 教育研究前沿(中英文版)2022，12，2： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员