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| 1 | The PL 'violet shift' of cerium dioxide on silicon显示文摘CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied from tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of 'violet shift' was observed. | Chai Chunlin Yang Shaoyan Liu Zhikai Liao Meiyong Chen Nuofu Wang Zhanguo | 2001 | Chinese Science Bulletin2001，46，24： | 5 |
| 2 | Violet/blue photoluminescence from CeO_2 thin film显示文摘CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thinfilm. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to theelectrons transition from Ce4f band to O2p band and thedefect level to O2p band. And these defects levels were lo-cated in the range of 1 eV around Ce4f band. | CHAI Chunlin, YANG Shaoyan, LIU Zhikai, LIAO Meiyong & CHEN Nuofu Key Laboratory of Semiconductor Material Science, Institute of Semi-conductors, Chinese Academy of Sciences, Beijing 100083, China | 2003 | Chinese Science Bulletin2003，48，12： | 4 |
| 3 | Anomalous temperature dependence of photoluminescence from a-C:H film deposited by energetic hydrocarbon ion beam显示文摘 | Meiyong Liao Zhihog Feng Shaoyan Yang Chunlin Chai Zhikai Liu Junling Yang Zhanguo Wang | 2002 | Solid State Communications2002，，5： | 1 |
| 4 | Growth mechanism of c-axis oriented A1N on (001) diamond substrates by metal-organic vapor phase epitaxy 显示文摘 | Masataka Imura Kiyomi Nakajima Meiyong Liao | 2010 | Journal of Crystal Growth2010，312，： | 1 |
| 5 | Growth mechanism of c-axis oriented A1N on (111) diamond substrates by metal-organic vapor phase epitaxy显示文摘 | Masataka Imura Kiyomi Nakajima Meiyong Liao | 2010 | Journal of Crystal Growth2010，312，： | 1 |
| 6 | MEMS/NEMS based on mono-, nano-, and ultrananocrystalline diamond films显示文摘 | Anirudha V. Sumant Orlando Auciello Meiyong Liao Oliver A. Williams | 2014 | MRS Bulletin2014，，6： | 1 |
| 7 | Ultra- high external quantum efficiency from thin SnO2 nanowire ultraviolet photodetectors显示文摘 | Hu Linfeng Yan Jian Liao Meiyong | 2011 | Small2011，7，8： | 1 |
| 8 | An adjustable multi-color detector based on regulating TiO_(2)surface adsorption and multi-junction synergy显示文摘A TiO_(2)-based multi-color photodetector with controlled photoelectric response to ultraviolet(UV)and visible light is developed by using band regulation technologies such as multi-junction synergy and surface adsorption.This photodetector is manufactured via a continuous process including magnetron sputtering,hydrothermal growth,hydrogen annealing,spin coating and thermal evaporation assembly to form a structure of N-doped TiO_(2)/hydrogenated-TiO_(2)/p-Si heterojunction.These synergistic effects form electronic potential wells in the device to control the electrical transport and spectral response of photo-generated carriers.In the air,the device exhibits a controllable photodetection ability that responds to visible light at positive voltages and UV light at negative voltages.But in vacuum(<0.1 Pa),the photodetection ability of the device at negative voltages is greatly reduced due to the lack of barrier effect caused by surface adsorption.On the contrary,the photodetection ability at positive voltage(e.g.,4 V)has been greatly improved,and the quantum efficiency reaches 206.6%under the 480 nm wavelength light.The device has a controllable ability to detect UV and visible light depending on the environments,which is very useful in the fields of environmental detection,chemical sensing and multi-color communication,etc. | Tao Ji Shuqing He Fujin Ai Jianghong Wu Li Yan Junqing Hu Meiyong Liao | 2021 | Nano Research2021，14，10： | 1 |
| 9 | 显示文摘 | Liao Meiyong Feng Zhihong Chai Chunlin | 2002 | Appl Phys2002，91，4： | 1 |
| 10 | High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications显示文摘The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms.The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same.The phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.The In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved. | Liwen Sang Meiyong Liao Masatomo Sumiya Xuelin Yang Bo Shen | 2023 | Fundamental Research2023，3，3： | 0 |
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