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3篇 您的检索式:作者名="Ningyu Ren"
    题名 作者 年代 出处 被引量
1Composite electron transport layer for efficient N-I-P type monolithic perovskite/silicon tandem solar cells with high open-circuit voltage显示文摘Perovskite/silicon tandem solar cells(PSTSCs) have exhibited huge technological potential for breaking the Shockley-Queisser limit of single-junction solar cells. The efficiency of P-I-N type PSTSCs has surpassed the single-junction limit, while the performance of N-I-P type PSTSCs is far below the theoretical value. Here, we developed a composite electron transport layer for N-I-P type monolithic PSTSCs with enhanced open-circuit voltage(VOC) and power conversion efficiency(PCE). Lithium chloride(Li Cl) was added into the tin oxide(SnO_(2)) precursor solution, which simultaneously passivated the defects and increased the electron injection driving force at the electron transfer layer(ETL)/perovskite interface.Eventually, we achieved monolithic PSTSCs with an efficiency of 25.42% and V_(OC) of 1.92 V, which is the highest PCE and VOCin N-I-P type perovskite/Si tandem devices. This work on interface engineering for improving the PCE of monolithic PSTSCs may bring a new hot point about perovskite-based tandem devices.Bingbing Chen Pengyang Wang Renjie Li Ningyu Ren Yongliang Chen Wei Han Lingling Yan Qian Huang Dekun Zhang Ying Zhao Xiaodan Zhang 2021Journal of Energy Chemistry2021,30,12:1
2Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells显示文摘Inverted perovskite solar cells(IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition(ALD) processed tin dioxide(SnO2) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm^(2), and fill factor of 81.07%. More importantly, the compact and stable SnO_(2) film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%–40% without encapsulation. The ALD-processed SnO_(2) provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future.Bingbing Chen Pengyang Wang Ningyu Ren Renjie Li Ying Zhao Xiaodan Zhang 2022Journal of Semiconductors2022,43,5:1
3Suppressed recombination for monolithic inorganic perovskite/silicon tandem solar cells with an approximate efficiency of 23%显示文摘Potentially temperature-resistant inorganic perovskite/silicon tandem solar cells(TSCs)are promising devices for boosting efficiency past the single-junction silicon limit.However,undesirable non-radiative recombination generally leads to a significant voltage deficit.Here,we introduce an effective strategy using nickel iodide,an inorganic halide salt,to passivate iodine vacancies and suppress non-radiative recombination.NiI_(2)-treated CsPbI_(3-x)Br_(x) inor-ganic perovskite solar cells with a 1.80 eV bandgap exhibited an efficiency of 19.53%and a voltage of 1.36 V,corresponding to a voltage deficit of 0.44 V.Importantly,the treated device demonstrated excellent operational stability,maintaining 95.7%of its initial efficiency after maximum power point tracking for 300 h under continuous illumination in a N_(2) atmosphere.By combining this inorganic perovskite top cell with a narrower bandgap silicon bottom cell,we for the first time achieved monolithic inorganic perovskite/silicon TSCs,which exhibited an effi-ciency of 22.95%with an open-circuit voltage of 2.04 V.This work provides a promising strategy for using inorganic passivation materials to achieve efficient and stable solar cells.Sanlong Wang Pengyang Wang Bingbing Chen Renjie Li Ningyu Ren Yucheng Li Biao Shi Qian Huang Ying Zhao Michael Grätzel Xiaodan Zhang 2022eScience2022,2,3:1
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